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VPEC — Investor Presentation 2021
May 3, 2021
52095_rns_2021-05-03_74a75e9b-f9b9-4c59-a148-62fc2780104c.pdf
Investor Presentation
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公司簡介 MOCVD 創造世界級之競爭力
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核心技術
MOCVD (有機金屬氣相沉積法) - Metal Organic Chemical Vapor Deposition
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核心技術
生產 MOCVD 有機金屬化學氣相沉積法 機台 Metal Organic Chemical Vapor Deposition
透過有機金屬化學氣相沉積法,在基板上生 生產 長半導體薄膜的方式,同時透過機台即時監 、 方式 控,精確控制磊晶層,完成砷化鎵 磷化 、 銦 氮化鎵等不同產品磊晶片生產。 生產 MOCVD 磊晶層是由 在腔體中加熱基板,一 原理 個原子層,層層堆疊,行成磊晶層。
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半導體分類(依使用材料)
Element Si Ge ,
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| , | ||||||||||||
| Semiconductor | IV-IV | |||||||||||
| SiC, | SiGe | |||||||||||
| III-V | ||||||||||||
| GaAs, | InP, GaN, GaP, GaSb... | |||||||||||
| Com | ound | |||||||||||
| p | ||||||||||||
| II-VI | ||||||||||||
| ZnSe, | ZnS, CdS, etc. | |||||||||||
| Period | Column II | III | IV | V | VI | |||||||
| Be | 鈹 | B | 硼 | C | 碳 | N | 氮 | O | 氧 | |||
| 2 | ||||||||||||
| Beryllium | Boron | Carbon | Nitrogen | Oxygen | 二元化合物 | Binary : GaAs, InP, GaP,GaN, etc. | ||||||
| Mg | 鎂 | Al | 鋁 | Si | 矽 | P | 磷 | S | 硫 | |||
| 3 | Magnesium | Aluminum | Silicon | Phosphorus | Sulfur | 三元化合物 | Ternary : InGaAs, InGaP, AlGaAs, etc. | |||||
| 4 | Zn | 鋅 | Ga | 鎵 | Ge | 鍺 | As | 砷 | Se | 硒 | 四元化合物 | Quaternary : AlGaInP, InGaAsP, etc. |
| Zinc | Gallium | Germanium | Arsenic | Selenium | ||||||||
| Cd | 鎘 | In | 銦 | Sn | 錫 | Sb | 銻 | Te | 碲 | 五元化合物 | Pentanary : AlGaInAsN, etc. | |
| 5 | ||||||||||||
| Cadmium | Indium | Tin | Antimony | Tellurium | ||||||||
| Hg | 汞 | Tl | 鉈 | Pb | 鉛 | |||||||
| 6 | ||||||||||||
| Mercury | Thallium | Lead | ||||||||||
| 4 |
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Semiconductor
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磊晶過程中之化學反應
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化學反應式:
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主要原物料:
MO Source + Hydride + Carrier Gas: H2
A s H 3[: rs ne] A i PH3 : Phosphine SiH 4 : Silane Si H 2 6 : Disiline H2Se : Hydrogen Selenide CBr 4 : Carbon Tetrabromide
TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga SiH TMIn : Tri-Methyl-Indium ( CH3 )3In Si H 2 DETe : Di-ethyl-Tellurium ( C2H5 )2Te DEZn : Di-ethyl-Zinc ( C2H5 )2Zn CBr CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂
CH Al CH Al 3 3 TMAl Tri - Methyl - Aluminum ( CH3 )3 三 甲基 鋁 CH 5 3
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化合物半導體材料特性
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High Electron Mobility
高電子移動速率(5.7x higher than CM0S) -
High Frequency Response
高頻率響應3. Wide Band Width寬幅之頻寬
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4 . High Linearity
高線性度 -
- High Power
高功率
- High Power
- Alternative Choice of Material
材料選擇多元性7.抗輻射 適用於無線通訊、光通訊、雷射
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產業供應鏈
Sumitomo, Freiberg, AXT 4~6 ”GaAs Substrate GaAs Epi- Wafer 磊晶片
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MOCVD Reactor
IDM :Qorvo, Avago, Skyworks
Microelectronics IC Process Wireless Communication Substrate Foundry : WIN, AWSC, GCS IC Package & Testing
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2018 年 -2021 年 Q1 損益情形
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2021 年展望
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----- Start of picture text ----- 5G 手機滲透率 WiFi6 & WiFi6E IoT Smart Link微電子產品車聯網 PA 5G 毫米波基站 國防工業 低軌道 LEO 衛星----- End of picture text -----
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2021 年展望
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----- Start of picture text ----- 5G 基站基礎建設 3D Sensing光電子車用光達 LiDAR 產品 智慧機器視覺----- End of picture text -----