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VPEC Investor Presentation 2021

May 3, 2021

52095_rns_2021-05-03_74a75e9b-f9b9-4c59-a148-62fc2780104c.pdf

Investor Presentation

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公司簡介 MOCVD 創造世界級之競爭力

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核心技術

MOCVD (有機金屬氣相沉積法) - Metal Organic Chemical Vapor Deposition

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核心技術

生產 MOCVD 有機金屬化學氣相沉積法 機台 Metal Organic Chemical Vapor Deposition

透過有機金屬化學氣相沉積法,在基板上生 生產 長半導體薄膜的方式,同時透過機台即時監 、 方式 控,精確控制磊晶層,完成砷化鎵 磷化 、 銦 氮化鎵等不同產品磊晶片生產。 生產 MOCVD 磊晶層是由 在腔體中加熱基板,一 原理 個原子層,層層堆疊,行成磊晶層。

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半導體分類(依使用材料)

Element Si Ge ,

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----- Start of picture text -----

,
Semiconductor IV-IV
SiC, SiGe
III-V
GaAs, InP, GaN, GaP, GaSb...
Com ound
p
II-VI
ZnSe, ZnS, CdS, etc.
Period Column II III IV V VI
Be B C N O
2
Beryllium Boron Carbon Nitrogen Oxygen 二元化合物 Binary : GaAs, InP, GaP,GaN, etc.
Mg Al Si P S
3 Magnesium Aluminum Silicon Phosphorus Sulfur 三元化合物 Ternary : InGaAs, InGaP, AlGaAs, etc.
4 Zn Ga Ge As Se 四元化合物 Quaternary : AlGaInP, InGaAsP, etc.
Zinc Gallium Germanium Arsenic Selenium
Cd In Sn Sb Te 五元化合物 Pentanary : AlGaInAsN, etc.
5
Cadmium Indium Tin Antimony Tellurium
Hg Tl Pb
6
Mercury Thallium Lead
4

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Semiconductor

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磊晶過程中之化學反應

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化學反應式:

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主要原物料:

MO Source + Hydride + Carrier Gas: H2

A s H 3[: rs ne] A i PH3 : Phosphine SiH 4 : Silane Si H 2 6 : Disiline H2Se : Hydrogen Selenide CBr 4 : Carbon Tetrabromide

TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga SiH TMIn : Tri-Methyl-Indium ( CH3 )3In Si H 2 DETe : Di-ethyl-Tellurium ( C2H5 )2Te DEZn : Di-ethyl-Zinc ( C2H5 )2Zn CBr CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂

CH Al CH Al 3 3 TMAl Tri - Methyl - Aluminum ( CH3 )3 三 甲基 鋁 CH 5 3

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化合物半導體材料特性

  1. High Electron Mobility 高電子移動速率 (5.7x higher than CM0S)

  2. High Frequency Response 高頻率響應 3. Wide Band Width 寬幅之頻寬

  • 4 . High Linearity 高線性度

    1. High Power 高功率
  1. Alternative Choice of Material 材料選擇多元性 7. 抗輻射 適用於無線通訊、光通訊、雷射

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產業供應鏈

Sumitomo, Freiberg, AXT 4~6 ”GaAs Substrate GaAs Epi- Wafer 磊晶片

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MOCVD Reactor

IDM :Qorvo, Avago, Skyworks

Microelectronics IC Process Wireless Communication Substrate Foundry : WIN, AWSC, GCS IC Package & Testing

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2018 -2021 Q1 損益情形

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2021 年展望

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----- Start of picture text ----- 5G 手機滲透率 WiFi6 & WiFi6E IoT Smart Link微電子產品車聯網 PA 5G 毫米波基站 國防工業 低軌道 LEO 衛星----- End of picture text -----

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2021 年展望

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----- Start of picture text ----- 5G 基站基礎建設 3D Sensing光電子車用光達 LiDAR 產品 智慧機器視覺----- End of picture text -----