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VPEC Investor Presentation 2026

May 26, 2026

52095_rns_2026-05-26_e579df8a-e74d-4670-b43e-eefde80ff7c8.pdf

Investor Presentation

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Company Profile

World-class leading edge with MOCVD

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VPEC

Core Technology

MOCVD(有機金屬氣相沉積法)

  • Metal Organic Chemical Vapor Deposition

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VPEC

Core Technology

Production Reactor

MOCVD Metal Organic Chemical Vapor Deposition

Way to Produce

Through the organic metal chemical vapor deposition method, the semiconductor film is grown on the substrate, and the epitaxial layer is accurately controlled through the real-time monitoring of the machine to complete the production of epitaxial wafers for different products such as GaAs、InP and GaN.

Production Principle

The epitaxial layer is heated by MOCVD in the cavity of the substrate, and an atomic layer is stacked layer by layer to form an epitaxial layer.


VPEC

Semiconductor (by Material)

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Period Column II III IV V VI
2 Be 鍍
Beryllium B 硼
Boron C 碳
Carbon N 氮
Nitrogen O 氧
Oxygen
3 Mg 鎂
Magnesium Al 鉛
Aluminum Si 矽
Silicon P 磷
Phosphorus S 硫
Sulfur
4 Zn 鋅
Zinc Ga 鎳
Gallium Ge 錯
Germanium As 砷
Arsenic Se 硒
Selenium
5 Cd 鎂
Cadmium In 銅
Indium Sn 鉻
Tin Sb 鉻
Antimony Te 磷
Tellurium
6 Hg 汞
Mercury Tl 鉛
Thallium Pb 鉛
Lead

二元化合物 Binary : GaAs, InP, GaP,GaN, etc.

三元化合物 Ternary : InGaAs, InGaP, AlGaAs, etc.

四元化合物 Quaternary : AlGaInP, InGaAsP, etc.

五元化合物 Pentanary : AlGaInAsN, etc.


VPEC

Chemical Reaction During Epitaxy

$$
\mathrm{Ga}(\mathrm{CH}_3)_3 + \mathrm{AsH}_3 \longrightarrow \mathrm{GaAs} + \mathrm{CH}_4
$$

化學反應式:

$$
\mathrm{In}(\mathrm{CH}_3)_3 + \mathrm{PH}_3 \longrightarrow \mathrm{InP} + \mathrm{CH}_4
$$

主要原物料:

MO Source + Hydride + Carrier Gas : H2

TEAl : Tri-ethyl-Aluminum (C₂H₅)₃Al AsH₃ : Arsine
TMGa : Tri-Methyl-Gallium (CH₃)₃ Ga PH₃ : Phosphine
TMIn : Tri-Methyl-Indium (CH₃)₃In SiH₄ : Silane
DETe : Di-ethyl-Tellurium (C₂H₅)₂Te Si₂H₆ : Disiline
DEZn : Di-ethyl-Zinc (C₂H₅)₂Zn H₂Se : Hydrogen Selenide
CP₂Mg : Bis (cyclo-penta-dienyl) Magnesium 環戊二烯鎂 CBr₄ : Carbon Tetrabromide

TMAl Tri - Methyl - Aluminum $(\mathrm{CH}_3)_3\mathrm{Al}$

三甲基 鋁

$\mathrm{CH}_3 - \mathrm{Al} - \mathrm{CH}_3$

$\mid$

$\mathrm{CH}_3$


VPEC

Advantages of Compoundsemiconductor

  1. High Electron Mobility (5.7x higher than CMOS)
  2. High Frequency Response
  3. Wide Band Width
  4. High Linearity
  5. High Power
  6. Alternative Choice of Material
  7. Anti-radiation

適用於微電子產品-HBT、pHEMT、BiHEMT、GaN on XX
光電子產品-PIN(PD、APD)、VCSEL、LD、SC、CW-Laser、GaN on XX

6


VPEC

GaAs in Wireless Communication Supply Chain

Sumitomo, Freiberger, AXT

2~6 "GaAs Substrate

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GaAs Epi- Wafer

磊晶片

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MOCVD Reactor

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VPEC is a Pure

Epi Provider

IDM: Qorvo, Skyworks

Fabless : Avago,

Qualcomm, Richwave,

Microelectronics

IC Process

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Wireless

Communication

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Foundry :

WIN, AWSC

IC Package & Testing


VPEC

Optoelectronic Products Industry Supply Chain

AXT, Freiberger, JX

2~4 "InP Substrate

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InP Epi- Wafer

磊晶片

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Optoelectronics

IC Process

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Al Data center

MOCVD Reactor

VPEC is a Pure Epi Provider

Optical Transceiver


VPEC

2023-2026 Q1 Financial Result

2026 Q1 % 2025 % 2024 % 2023 %
Revenue 959,310 100% 3,380,143 100% 3,241,217 100% 2,694,104 100%
Gross margin 365,431 38% 1,219,726 36% 1,278,964 39% 1,108,914 41%
Operating Profit 226,651 24% 669,263 20% 721,214 22% 542,069 20%
Non-operating income & expense 16,944 2% -1,912 0% 96,460 3% -347 0%
Tax -48,510 -5% -119,409 -4% -146,619 -5% -91,490 -3%
Net income 195,085 20% 547,942 16% 671,055 21% 450,232 17%
EPS 1.06 2.97 3.63 2.43

VPEC

2026 Outlook

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01

5G Mobile Penetration

Wireless RF

02

WiFi 7

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03

V2X

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04

IoT Smart Link (4G PA)

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VPEC Proprietary and Confidential


VPEC

2026 Outlook

01

Data Center High Speed Connectivity

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PD for 800G VCSEL for 400G & 800G

02

3D-sening

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VCSEL / PD

03

AR/VR

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VCSEL

Opto electronics

04

機器視覺

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LEO Solar Cell

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P-sensor、3D Sensing、ToF

UAV

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AI glass

HAMR HDD

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Awakening the AI Terminals: Sense, Compute, Move

VPEC

AI glass

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Micro LED

Wi-Fi 7

ToF

AI datacenter

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CW-laser

VCSEL

PD

Drone

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Solar Cell

Wi-Fi 7

Source: Copilot

VPEC Proprietary and Confidential