VPEC — Fund Information / Factsheet 2022

Mar 11, 2022

==> picture [635 x 32] intentionally omitted <==

==> picture [635 x 32] intentionally omitted <==

==> picture [635 x 32] intentionally omitted <==

==> picture [635 x 31] intentionally omitted <==

公司簡介 MOCVD 創造世界級之競爭力

==> picture [143 x 146] intentionally omitted <==

1

==> picture [77 x 78] intentionally omitted <==

核心技術

MOCVD （有機金屬氣相沉積法） - Metal Organic Chemical Vapor Deposition

==> picture [461 x 69] intentionally omitted <==

==> picture [461 x 193] intentionally omitted <==

2

==> picture [77 x 78] intentionally omitted <==

核心技術

生產 機台

MOCVD 有機金屬化學氣相沉積法 Metal Organic Chemical Vapor Deposition

透過有機金屬化學氣相沉積法，在基板上生 生產 長半導體薄膜的方式，同時透過機台即時監 、 、 方式 控，精確控制磊晶層，完成砷化鎵 磷化銦 氮化鎵等不同產品磊晶片生產。 生產 MOCVD 磊晶層是由 在腔體中加熱基板，一 原理 個原子層，層層堆疊，行成磊晶層。

3

==> picture [77 x 78] intentionally omitted <==

半導體分類（依使用材料）

Element Si Ge ,

==> picture [700 x 372] intentionally omitted <==

----- Start of picture text -----

||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|,|
|Semiconductor|IV-IV|
|SiC,|SiGe|
|III-V|
|GaAs,|InP, GaN, GaP, GaSb...|
|Com|ound|
|p|
|II-VI|
|ZnSe,|ZnS, CdS, etc.|
|Period|Column II|III|IV|V|VI|
|Be|鈹|B|硼|C|碳|N|氮|O|氧|
|2|
|Beryllium|Boron|Carbon|Nitrogen|Oxygen|二元化合物|Binary : GaAs, InP, GaP,GaN, etc.|
|Mg|鎂|Al|鋁|Si|矽|P|磷|S|硫|
|3|Magnesium|Aluminum|Silicon|Phosphorus|Sulfur|三元化合物|Ternary : InGaAs, InGaP, AlGaAs, etc.|
|4|Zn|鋅|Ga|鎵|Ge|鍺|As|砷|Se|硒|四元化合物|Quaternary : AlGaInP, InGaAsP, etc.|
|Zinc|Gallium|Germanium|Arsenic|Selenium|
|Cd|鎘|In|銦|Sn|錫|Sb|銻|Te|碲|五元化合物|Pentanary : AlGaInAsN, etc.|
|5|
|Cadmium|Indium|Tin|Antimony|Tellurium|
|Hg|汞|Tl|鉈|Pb|鉛|
|6|
|Mercury|Thallium|Lead|
|4|

----- End of picture text -----

Semiconductor

4

==> picture [77 x 78] intentionally omitted <==

磊晶過程中之化學反應

==> picture [274 x 97] intentionally omitted <==

化學反應式：

==> picture [70 x 61] intentionally omitted <==

主要原物料:

MO Source + Hydride + Carrier Gas： H2

A s H 3[: rs ne] A i PH3 : Phosphine SiH 4 : Silane Si H 2 6 : Disiline H2Se : Hydrogen Selenide CBr 4 : Carbon Tetrabromide

TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga SiH TMIn : Tri-Methyl-Indium ( CH3 )3In Si H 2 DETe : Di-ethyl-Tellurium ( C2H5 )2Te DEZn : Di-ethyl-Zinc ( C2H5 )2Zn CBr CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂

CH Al CH Al 3 3 TMAl Tri - Methyl - Aluminum ( CH3 )3 三 甲基 鋁 CH 5 3

==> picture [77 x 78] intentionally omitted <==

化合物半導體材料特性

1. High Electron Mobility 高電子移動速率 (5.7x higher than CM0S)

2. High Frequency Response 高頻率響應 3. Wide Band Width 寬幅之頻寬

3. 4 . High Linearity 高線性度

4. 1. High Power 高功率

5. Alternative Choice of Material 材料選擇多元性 7. 抗輻射 適用於無線通訊、光通訊、雷射

6

==> picture [77 x 78] intentionally omitted <==

產業供應鏈

Sumitomo, Freiberg, AXT

2~6 ”GaAs Substrate GaAs Epi- Wafer 磊晶片

==> picture [125 x 45] intentionally omitted <==

==> picture [125 x 52] intentionally omitted <==

==> picture [147 x 113] intentionally omitted <==

==> picture [145 x 44] intentionally omitted <==

MOCVD Reactor

IDM ：Qorvo, Avago, Skyworks

Microelectronics IC Process Wireless Communication Substrate Foundry ： WIN, AWSC, GCS IC Package & Testing

7

==> picture [77 x 78] intentionally omitted <==

2018 -2021 年 年前三季損益情形

==> picture [699 x 153] intentionally omitted <==

==> picture [699 x 159] intentionally omitted <==

8

==> picture [77 x 78] intentionally omitted <==

2021 年展望

==> picture [706 x 382] intentionally omitted <==

----- Start of picture text -----

5G 手機滲透率 WiFi6 & WiFi6E IoT Smart Link
微電子
產品
車聯網 PA 5G 毫米波基站 國防工業 低軌道 LEO 衛星
----- End of picture text -----

==> picture [77 x 78] intentionally omitted <==

2021 年展望

==> picture [651 x 372] intentionally omitted <==

----- Start of picture text -----

5G 基站基礎建設 3D Sensing
光電子
車用光達 LiDAR 產品 智慧機器視覺
----- End of picture text -----