VPEC — Annual Report 2025

Mar 3, 2026

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Company Profile

World-class leading edge with MOCVD

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Core Technolo gy

MOCVD （有機金屬氣相沉積法）

• Metal Organic Chemical Vapor Deposition

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Production Reactor

Way to Produce

Production Principle

Core Technolo gy

MOCVD Metal Organic Chemical Vapor Deposition

Through the organic metal chemical vapor deposition method, the semiconductor film is grown on the substrate, and the epitaxial layer is accurately controlled through the real-time monitoring of the machine to complete the production of epitaxial wafers for 、 different products such as GaAs InP and GaN.

The epitaxial layer is heated by MOCVD in the cavity of the substrate, and an atomic layer is stacked layer by layer to form an epitaxial layer.

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Semiconductor （ b Material ） y

Element Si Ge ,

Semiconductor

IV-IV SiC, SiGe III-V GaAs, InP, GaN, GaP, GaSb... Compound

II-VI ZnSe, ZnS, CdS, etc.

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|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Period|Column II|III|IV|V|VI|
|Be|鈹|B|硼|C|碳|N|氮|O|氧|
|2|
|Beryllium|Boron|Carbon|Nitrogen|Oxygen|二元化合物|Binary : GaAs, InP, GaP,GaN, etc.|
|Mg|鎂|Al|鋁|Si|矽|P|磷|S|硫|
|3|Magnesium|Aluminum|Silicon|Phosphorus|Sulfur|三元化合物|Ternary : InGaAs, InGaP, AlGaAs, etc.|
|4|Zn|鋅|Ga|鎵|Ge|鍺|As|砷|Se|硒|四元化合物|Quaternary : AlGaInP, InGaAsP, etc.|
|Zinc|Gallium|Germanium|Arsenic|Selenium|
|Cd|鎘|In|銦|Sn|錫|Sb|銻|Te|碲|五元化合物|Pentanary : AlGaInAsN, etc.|
|5|
|Cadmium|Indium|Tin|Antimony|Tellurium|
|Hg|汞|Tl|鉈|Pb|鉛|
|6|
|Mercury|Thallium|Lead|
|4|

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Chemical Reaction During Epitaxy

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化學反應式：

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主要原物料 :

MO Source + Hydride + Carrier Gas ： H2

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AsH3 : Arsine PH3 : Phosphine SiH 4 : Silane Si H 2 6 : Disiline H2Se : Hydrogen Selenide CBr 4 : Carbon Tetrabromide

TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga SiH TMIn : Tri-Methyl-Indium ( CH3 )3In Si H 2 DETe : Di-ethyl-Tellurium ( C2H5 )2Te DEZn : Di-ethyl-Zinc ( C2H5 )2Zn CBr CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂

CH Al CH Al 3 3 TMAl Tri - Methyl - Aluminum ( CH3 )3 三 甲基 鋁 CH 3

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Advantages of Compoundsemiconductor

1. High Electron Mobility 高電子移動速率 (5.7x higher than CM0S)

2. High Frequency Response 高頻率響應

3. Wide Band Width 寬幅之頻寬

4. High Linearity 高線性度

5. High Power 高功率

6. Alternative Choice of Material 材料選擇多元性

7. 抗輻射

－ 、 、 、 適用於 微電子產品 HBT pHEMT BiHEMT GaN on XX － 、 、 、 、 光電子產品 PIN （ PD APD ）、 VCSEL LD SC - 、 CW Laser GaN on XX

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GaAs in Wireless Communication Supply Chain

IDM ： Qorvo, Skyworks Fabless ： Avago, Qualcomm, Richwave,

Sumitomo, Freiberger, AXT

2~6 ”GaAs Substrate

GaAs Epi- Wafer Microelectronics 磊晶片 IC Process Wireless Communication Substrate VPEC is a Pure Foundry ： MOCVD Reactor Epi Provider WIN, AWSC

IC Package & Testing

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2022-2025 Financial Result

	2025	%	2024	%	2023	%	2022	%
Revenue	3,380,143	100%	3,241,217	100%	2,694,104	100%	2,603,629	100%
Gross margin	1,219,726	36%	1,278,964	39%	1,108,914	41%	1,089,007	42%
Operating Profit	669,263	20%	721,214	22%	542,069	20%	579,950	22%
Non- operating income & expense	-1,912	0%	96,460	3%	-347	0%	87,533	3%
Tax	-119,409	-4%	-146,619	-5%	-91,490	-3%	-122,755	-5%
Net income	547,942	16%	671,055	21%	450,232	17%	544,728	21%
EPS	2.97		3.63		2.43		2.95

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2026 Outlook

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5G Mobile 01 Penetration

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WiFi 7

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Wireless RF

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V2X

03 IoT Smart Link (4G PA)

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VPEC Proprietary and Confidential

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2026 Outlook

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Data Center High Speed Connectivity

PD for 800G VCSEL for 400G & 800G

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3D-sening

VCSEL / PD

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Opto electronics 03

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VCSEL
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AR/VR

機器視覺

LEO Solar Cell

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Future Driving Engines

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Car LiDAR (LD/PD)

、 、 P-sensor 3D Sensing ToF

UAV

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AI glass
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CPO
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CPO VPEC Proprietary and Confidential

Awakening the AI Terminals: Sense, Compute, Move

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Source ： Copilot

VPEC Proprietary and Confidential