VPEC — Annual Report 2024

Mar 11, 2025

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公司簡介 MOCVD 創造世界級之競爭力

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心 核 技術

MOCVD （有機金屬氣相沉積法）

• Metal Organic Chemical Vapor Deposition

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生產 機台

生產
方式

生產 原理

核心技術

MOCVD 有機金屬化學氣相沉積法 Metal Organic Chemical Vapor Deposition

透過有機金屬化學氣相沉積法，在基板上生
長半導體薄膜的方式，同時透過機台即時監
、、
控，精確控制磊晶層，完成砷化鎵磷化銦
氮化鎵等不同產品磊晶片生產。

磊晶層是由 MOCVD 在腔體中加熱基板，一 個原子層，層層堆疊，行成磊晶層。

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半導體分類 （ 依使用材料 ）

Element Si Ge ,

Semiconductor

IV-IV SiC, SiGe III-V GaAs, InP, GaN, GaP, GaSb... Compound

II-VI ZnSe, ZnS, CdS, etc.

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|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Period|Column II|III|IV|V|VI|
|Be|鈹|B|硼|C|碳|N|氮|O|氧|
|2|
|Beryllium|Boron|Carbon|Nitrogen|Oxygen|二元化合物|Binary : GaAs, InP, GaP,GaN, etc.|
|Mg|鎂|Al|鋁|Si|矽|P|磷|S|硫|
|3|Magnesium|Aluminum|Silicon|Phosphorus|Sulfur|三元化合物|Ternary : InGaAs, InGaP, AlGaAs, etc.|
|4|Zn|鋅|Ga|鎵|Ge|鍺|As|砷|Se|硒|四元化合物|Quaternary : AlGaInP, InGaAsP, etc.|
|Zinc|Gallium|Germanium|Arsenic|Selenium|
|Cd|鎘|In|銦|Sn|錫|Sb|銻|Te|碲|五元化合物|Pentanary : AlGaInAsN, etc.|
|5|
|Cadmium|Indium|Tin|Antimony|Tellurium|
|Hg|汞|Tl|鉈|Pb|鉛|
|6|
|Mercury|Thallium|Lead|
|4|

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磊晶過程中之化學反應

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化學反應式：

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主要原物料 :

MO Source + Hydride + Carrier Gas ： H2

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AsH3 : Arsine PH3 : Phosphine SiH 4 : Silane Si H 2 6 : Disiline H2Se : Hydrogen Selenide CBr 4 : Carbon Tetrabromide

TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga SiH TMIn : Tri-Methyl-Indium ( CH3 )3In Si H 2 DETe : Di-ethyl-Tellurium ( C2H5 )2Te DEZn : Di-ethyl-Zinc ( C2H5 )2Zn CBr CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂

CH Al CH Al 3 3 TMAl Tri - Methyl - Aluminum ( CH3 )3 三 甲基 鋁 5 CH 3

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化合物半導體材料特性

1. High Electron Mobility 高電子移動速率 (5.7x higher than CM0S)

2. High Frequency Response 高頻率響應

3. Wide Band Width 寬幅之頻寬

4. High Linearity 高線性度

5. High Power 高功率

6. Alternative Choice of Material 材料選擇多元性

7. 抗輻射

－ 、 、 、 適用於 微電子產品 HBT pHEMT BiHEMT GaN on XX － 、 、 、 光電子產品 PIN （ PD APD ）、 VCSEL LD SC

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微電子產品產業供應鏈

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IDM ： Qorvo, Skyworks Fabless ： Avago, Qualcomm, Richwave,

Sumitomo, Freiberg, AXT

2~6 ”GaAs Substrate

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GaAs Epi- Wafer Microelectronics 磊晶片 IC Process Substrate VPEC is a Pure Foundry ：

Wireless Communication

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VPEC is a Pure MOCVD Reactor Epi Provider

WIN, AWSC

IC Package & Testing

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2021 -2024 年 年損益情形

	2024	%	2023	%	2022	%	2021	%
Revenue	3,241,217	100%	2,694,104	100%	2,603,629	100%	3,608,521	100%
Gross margin	1,278,964	39%	1,108,914	41%	1,089,007	42%	1,519,713	42%
Operating Profit	721,214	22%	542,069	20%	579,950	22%	1,056,519	29%
Non- operating income & expense	96,460	3%	-347	0%	87,533	3%	-3,842	0%
Tax	-146,619	-5%	-91,490	-3%	-122,755	-5%	-197,596	-5%
Net income	671,055	21%	450,232	17%	544,728	21%	855,081	24%
EPS	3.63		2.43		2.95		4.62

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2025 Outlook

01

的内容入您的内容输入您的内 5G Mobile 容输入您的内容输入您的内容 Penetration 内容输入您的内容.

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WiFi 7

02 微電子產品 V2X 03 04 IoT Smart Link ~~(4G PA)~~

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2025 Outlook

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Data Center High Speed Connectivity

PD for 800G VCSEL for 400G VCSEL / PD

01

3D-sening 02 光電子產品 AR/VR 03 VCSEL for 800G Future Driving 04 、 Engines P-sensor 3D Sensing & ToF ~~AI glass~~ 矽光子

VCSEL

LEO Solar Cell

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Car LiDAR (LD/PD)

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