VPEC — Interim / Quarterly Report 2025

May 15, 2025

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Company Profile

World-class leading edge with MOCVD

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Core Technolo gy

MOCVD （有機金屬氣相沉積法）

• Metal Organic Chemical Vapor Deposition

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Production Reactor

Way to Produce

Production Principle

Core Technolo gy

MOCVD Metal Organic Chemical Vapor Deposition

Through the organic metal chemical vapor deposition method, the semiconductor film is grown on the substrate, and the epitaxial layer is accurately controlled through the real-time monitoring of the machine to complete the production of epitaxial wafers for 、 different products such as GaAs InP and GaN.

The epitaxial layer is heated by MOCVD in the cavity of the substrate, and an atomic layer is stacked layer by layer to form an epitaxial layer.

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Semiconductor （ b Material ） y

Element Si Ge ,

Semiconductor

IV-IV SiC, SiGe III-V GaAs, InP, GaN, GaP, GaSb... Compound

II-VI ZnSe, ZnS, CdS, etc.

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|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Period|Column II|III|IV|V|VI|
|Be|鈹|B|硼|C|碳|N|氮|O|氧|
|2|
|Beryllium|Boron|Carbon|Nitrogen|Oxygen|二元化合物|Binary : GaAs, InP, GaP,GaN, etc.|
|Mg|鎂|Al|鋁|Si|矽|P|磷|S|硫|
|3|Magnesium|Aluminum|Silicon|Phosphorus|Sulfur|三元化合物|Ternary : InGaAs, InGaP, AlGaAs, etc.|
|4|Zn|鋅|Ga|鎵|Ge|鍺|As|砷|Se|硒|四元化合物|Quaternary : AlGaInP, InGaAsP, etc.|
|Zinc|Gallium|Germanium|Arsenic|Selenium|
|Cd|鎘|In|銦|Sn|錫|Sb|銻|Te|碲|五元化合物|Pentanary : AlGaInAsN, etc.|
|5|
|Cadmium|Indium|Tin|Antimony|Tellurium|
|Hg|汞|Tl|鉈|Pb|鉛|
|6|
|Mercury|Thallium|Lead|
|4|

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Chemical Reaction During Epitaxy

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化學反應式：

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主要原物料 :

MO Source + Hydride + Carrier Gas ： H2

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AsH3 : Arsine PH3 : Phosphine SiH 4 : Silane Si H 2 6 : Disiline H2Se : Hydrogen Selenide CBr 4 : Carbon Tetrabromide

TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga SiH TMIn : Tri-Methyl-Indium ( CH3 )3In Si H 2 DETe : Di-ethyl-Tellurium ( C2H5 )2Te DEZn : Di-ethyl-Zinc ( C2H5 )2Zn CBr CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂

CH Al CH Al 3 3 TMAl Tri - Methyl - Aluminum ( CH3 )3 三 甲基 鋁 CH 3

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Advantages of Compoundsemiconductor

1. High Electron Mobility 高電子移動速率 (5.7x higher than CM0S)

2. High Frequency Response 高頻率響應

3. Wide Band Width 寬幅之頻寬

4. High Linearity 高線性度

5. High Power 高功率

6. Alternative Choice of Material 材料選擇多元性

7. 抗輻射

－ 、 、 、 適用於 微電子產品 HBT pHEMT BiHEMT GaN on XX － 、 、 、 光電子產品 PIN （ PD APD ）、 VCSEL LD SC

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GaAs in Wireless Communication Supply Chain

IDM ： Qorvo, Skyworks Sumitomo, Freiberg, AXT Fabless ： Avago, 2~6 ”GaAs Substrate Qualcomm, Richwave, GaAs Epi- Wafer Microelectronics 磊晶片 IC Process Wireless Communication Substrate VPEC is a Pure Foundry ： MOCVD Reactor Epi Provider WIN, AWSC

Sumitomo, Freiberg, AXT

2~6 ”GaAs Substrate

IC Package & Testing

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2022-2025Q1 Financial Result

	2025Q1	%	2024	%	2023	%	2022	%
Revenue	793,663	100%	3,241,217	100%	2,694,104	100%	2,603,629	100%
Gross margin	316,671	40%	1,278,964	39%	1,108,914	41%	1,089,007	42%
Operating Profit	178,983	23%	721,214	22%	542,069	20%	579,950	22%
Non-operating income & expense	17,638	2%	96,460	3%	-347	0%	87,533	3%
Tax	-39,334	-5%	-146,619	-5%	-91,490	-3%	-122,755	-5%
Net income	157,287	20%	671,055	21%	450,232	17%	544,728	21%
EPS	0.85		3.63		2.43		2.95

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2025 Outlook

01

的内容入您的内容输入您的内 5G Mobile 容输入您的内容输入您的内容 Penetration 内容输入您的内容.

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WiFi 7

02 Wireless RF V2X 03 04 IoT Smart Link ~~(4G PA)~~

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2025 Outlook

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Data Center High Speed Connectivity

PD for 800G VCSEL for 400G

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3D-sening 02 AR/VR

VCSEL / PD

Opto electronics 03

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VCSEL

Machine Vision

LEO Solar Cell

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Future Driving Engines

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Car LiDAR (LD/PD)

、 P-sensor 3D Sensing & ToF

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AI lass g

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Silicon Photonics

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