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MSS Investor Presentation 2026
52639_rns_2026-05-25_8c7f3913-128a-4018-8cab-b255f9fe48cd.pdf
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MSS
MATERIAL SCIENCE SERVICE
汎銓科技 AI晶片分析平台
www.msscorps.com
Msscorps (6830) 2026 Operational Outlook
Four Engines Ignited, Revenue Momentum in Full Swing
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This report contained herein is the exclusive intelligent property of MSSCORPS CO., LTD and shall not be distributed, copied, reproduced, or disclosed in whole or in part without prior permission.
本報告為汎銓科技股份有限公司之智慧財產權，非經本公司書面授權許可，不得透露或使用本報告，亦不得複印、複製或轉變成其他任何形式使用。 -
The results in this report are solely based on data, information, and/or samples provided by the applicant. All contents in this report shall be treated as whole, separated usage (texts or images) is invalid.
本報告僅就委託者之委託事項提供分析結果，報告分離使用無效。 -
This report is for reference only. Please consult MSSCORPS CO., LTD first for other purposes, such as advertisement, sales promotion, notarial, or lawsuit.
本報告所載事項僅作參考資料，若貴公司擬作為廣告、商業推銷、公證、法律訴訟之用途，請先諮詢本公司同意。
Form No: Q4-MA01 Ver.1.2
MSS's Four Major Growth Engines for 2026
The "Silicon Photonics Engineering Division," in addition to having self-development and assembled three silicon photonics analysis equipment units (which have received patents in Taiwan, Japan, and the United States), will also respond to customer demands. It plans to further launch silicon photonics testing equipment suitable for production (PD) and quality assurance (QA) applications in 2026. This marks an official extension from providing services to equipment sales and licensing, thereby establishing a new operational model.
MSS
MATERIAL SCIENCE SERVICE
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Form No: Q4-MA01 Ver.1.2
Global Footprint — Connecting Service Locations Worldwide, All Growth Engines Fired Up for 2026
- Strategic Priority: Ensuring Supply Chain Security
> Actively fostering a resilient domestic semiconductor ecosystem to mitigate the risk of future chip shortages - Growth Strategy: Replicating Hsinchu's Success Model Globally
> Systematically implement validated operational and innovation frameworks across global laboratories
HQ Expansion
SiPh testing and fault isolation analysis zone
HQ + Zhubei 2nd lab
Materials analysis for advanced nodes
Zhubei 1st lab
AI Client Zone
SAC-TEM Center
Angstrom-era materials analysis
Shenzhen Branch
Official service operations in August 2025
Japan location
Official service operations in September 2025
US location
Official service operations in September 2025
MS&E
MATERIAL SCIENCE SERVICE
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Form No: Q4-MA01 Ver.1.2
Angstrom-era process materials analysis
International presentation of High-NA photo resistor analysis by our clients
Cs-corrected STEM@SAC
- Collaborate with semiconductor industry leaders to participate in next-generation process R&D
- Utilize state-of-the-art aberration-corrected STEM to advance cutting-edge material analysis
- Pioneer innovative analysis techniques to solidify industrial competitive advantage
Name • Text & Measurement • Atom Probe Tomography: An Advanced Materials Characterization Technique for Next-Gen Semiconductor Technologies
Atom Probe Tomography: An Advanced Materials Characterization Technique for Next-Gen Semiconductor Technologies
Article By: MSCORP5 Co, Ltd
Category: Text & Measurement
2025-12-15
(4) Comments
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Demands for analytical spatial resolution and chemical sensitivity intensity as transistor dimensions near atomic scales and 3D integration become even more complex.
Chip analysis at the atomic scale: meeting the next-generation semiconductor's stringent demands for spatial resolution and chemical sensitivity!
Technical paper for new analytical technology
M
MATERIAL SCIENCE SERVICE
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Form No: Q4-MA01 Ver.1.2
Angstrom-era process materials analysis – MSS's core competitiveness
Collaboration with top-tier international manufacturers
- Sub-A resolution
- PR protection technology
- Low-k protection technology
- Super-thin lamella technology
- Auto-measurement technology
MS
MATERIAL SCIENCE SERVICE
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Form No: Q4-MA01 Ver.1.2
Expanding the 'AI Zone' — Deepening Collaboration with Global AI Leaders
- Collaborating with a global leader in artificial intelligence to expand the AI zone
- Integrate cross-disciplinary expertise to develop unique silicon photonics analysis solutions
- Provide critical analytical techniques to address material and integration challenges in CPO and PIC
MEET MATERIALS SCIENCE SERVICE
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Form No: Q4-MA01 Ver.1.2
AI Analysis – MSS’s Core Competitiveness
- Advanced package
- TSV sample preparation and analysis
- hybrid- bonding analysis tech.
- Hydra PFIB preparation tech.
- Large IC and substrate separation technology
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THz-TDR / Thermal XYZ / 3D X-ray analysis
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FA for advanced package
- Full layer parallel lapping technology
- Ion beam pretreatment technology
- Has been validated by multiple companies for their 3nm process node products
MSM MATERIAL SCIENCE SERVICE
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Form No: Q4-MA01 Ver.1.2
SiPh analysis
Fault isolation by NIR
Measurements
- Laser: O-band (1310 nm), C+L-band (1550 nm)
- IL (Insertion Loss), RL (Return Loss) & PDL (Polarization dependent loss) test platforms
- OFDR, Spectrum / Transmission curve
- Grating / Edge coupler (GC/EC)
- XYZθ scan and NIR observation
Granted patent (Taiwan、Japan、US): Device for detecting optical loss (I870008)
SEM image of the waveguide cross-section of the low-noise frequency converter
Root-cause identification
- SEM/FIB/TEM
MB
MATERIAL SCIENCE SERVICE
Ref: https://www.nist.gov/image/fwmsimagewebjpg
Confidential, Do Not Copy Without Permission
Form No: Q4-MA01 Ver.1.2
MSS HG (Helmet Gecko)
Live status of in-house equipment at MSS
Sales Version (Mechanical Schematic Diagram)
Standard Solutions:
1. Automatic Sales-Corporal Element (LCD)
2. Spiked Line & Linkage Coordination (SLEC) with Measurement
3. Digital Inventory Variation (Assessment-1st and >1 r also)
Optional Features:
1. Output Frequency (benson & Houseman) / 2.0 MP
2. High Power Measurement (1000 mW)
3. High Power Maximum (1000 W) (benson & Houseman) (PSA)
4. 2nd & 3rd & 4th Power Measurement
5. 6th & 7th Measurement (10 / 2 to / 1.5 etc)
6. 1st & 2nd & 3rd Measurement (10 / 11 / 1.5 etc)
7. 4th & 5th & 6th (10 / 2 to 3rd)
MS&E
MATERIAL SCIENCE SERVICE
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Form No: Q4-MA01 Ver.1.2
High-value-added business model for SiPh
- Core service: Precision localization analysis for CPO & SiPh E-O, O-O, and O-E optical loss and fault points
- Extension: Equipment sales
- Revenue structure: Diverse and scalable technology licensing income
MB
MATERIAL SCIENCE SERVICE
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Form No: Q4-MA01 Ver.1.2
SiPh Analysis – MSS’s Core Competitiveness
SiPh ecosystem
- SiPh structure
- Large-area preparation
- Precision positioning and lapping/polishing technology
- Conductive sample preparation method
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Low-curtaining artifact sample preparation method
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SiPh photoelectricity test
- Optical characterization and loss measurement for SiPh devices
- Optical path anomaly localization, break, and light leakage detection for SiPh components
- Fully automatic optical scanning 12-inch SiPh photometric platform
MS&M MATERIAL SCIENCE SERVICE
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Form No: Q4-MA01 Ver.1.2
Strong demand for Angstrom-era materials analysis and SiPh analysis
- Precision – Atomic level
- Integrated analytical solutions
The global silicon photonics market size is predicted to increase from USD 2.86 billion in 2025 to approximately USD 28.75 billion by 2034, expanding at a CAGR of 29.25% from 2025 to 2034.
Source: https://www.precedenceresearch.com/silicon-photonics-market
(Left) End-of-process cross sectional images for (a) bottom pFET and (b) top nFET (LG,PHYS=27nm) (as presented at VLSI 2023). (Right) TEM image of a 2D device fabricated with 300mm processes. From imec
188
MATERIAL SCIENCE SERVICE
Confidential, Do Not Copy Without Permission
Form No: Q4-MA01 Ver.1.2
Strong demand from semiconductor equipment and material vendors
Page 12
MATERIAL SCIENCE SERVICE
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Form No: Q4-MA01 Ver.1.2
| Introduction of advanced technology node development
Phase 1
Equipment/Materials
Path Finding
Phase 2
RD FAB Equipment and Materials Import and Validation
Phase 3
Taiwan Mass Production FAB & Unit-by-Unit PRS Check | Global Collaboration Strategy Across the Semiconductor Development Cycle
Equipment Vendor R&D Engagement
• Global equipment leaders develop next-generation etch platforms within dedicated R&D centers
• Define critical tool parameters and performance benchmarks
• Optimize process windows and validate material compatibility
Customer-Side Demonstration & Process Optimization
• Localized prototype deployment near key customs
• Hands-on operation by customer R&D team
• Joint optimization of process parameters and
• Data-driven benchmarking (throughput, yield, and demand)
define final tool settings and production-ramp recipes
Technology Transfer to Volume Production FAB
• Align production FAB quality with R&D reference standards
• Standardize materials and validated process recipes
• Perform tool-by-tool PRS qualification prior to release
• Confirm parity across critical KPIs (CD control, profile integrity, defect density, throughput) before production ramp | U.S. Equipment Vendors
United States – Silicon Valley
Hsinchu (R&D FAB)
Hsinchu (R&D FAB)
Hsinchu / Tainan / Taichung (Volume Production FAB) | Japan Equipment Vendors
Greater Tokyo Area, Japan
Yokohama, Kawasaki, Tsukuba, and Shizuoka
Hsinchu (R&D FAB)
Hsinchu (R&D FAB)
Hsinchu / Taiwan (Volume Production FAB) |
| --- | --- | --- | --- |
Our Winning Strategy – Innovative Analytical Technologies + In-House Equipment Development
More than ten multi-country patents, over 50 confidential (or proprietary) methodologies
- Advanced analytical technologies and R&D capabilities
- Strict PIP control and E-system
- Close collaboration with top-tier international customers
- High-end / experienced professional talent
Patents granted in Taiwan, Japan, and the US
LT ALD
Laser decapsulation system
M
MATERIAL SCIENCE SERVICE
Confidential, Do Not Copy Without Permission
Form No: Q4-MA01 Ver.1.2
MS
MATERIAL SCIENCE SERVICE
Thank you for listening, and welcome your guidance
Q&A
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MATERIAL SCIENCE SERVICE
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Form No: Q4-MA01 Ver.1.2
Page 14
| Item | Group | Technology | MSS niche | 2025 Q4 Revenue Share | 2026 Q4 Revenue Share | Expected growth in 2026-2027 |
|---|---|---|---|---|---|---|
| 先進製程(玻米世代)-Advanced processes (Angstrom era) | MA | PR protection technology | 3rd generation EUV PR protection technology | 54.3% (Quarter) 83.94 M (Month) | 54.3% (Quarter) 83.94 M (Month) | Stable growth |
| MA | Advanced EUV PR protection technology | |||||
| MA | Selective deposition sample preparation technology / Advanced material test platform | |||||
| MA | low-k protection technology | BEOL: low-k structure protection technology | ||||
| MA | BEOL: low-k damage analysis technology | |||||
| MA | Novel 2D materials analysis method | |||||
| MA | Ultra-thin sample method | Ultra-thin sample protection method | ||||
| MA | TEOL: GAA etch byproduct bonding state analysis | |||||
| MA | MEOL: ALE etch byproduct comparison platform / Precise etching depth verification technology | |||||
| MA | High aspect ratio structural TEM analysis technology | |||||
| MA | Auto-measurement | Artificial intelligence for automatic measurement / Etching depth morphology data analysis platform | ||||
| 成熟製程-Mature processes | MA | ML ball height/ML defect | Optical component analysis technology: ML ball height/ML defect | 9.36% (Quarter) 14.49 M (Month) | 7.2% (Quarter) 13.81 M (Month) | Compound semiconductors |
| MA | Wearable device AR/VR product lens integration analysis | |||||
| MA | Compound Semiconductor | Epitaxial defect quantitative analysis technology | ||||
| MA | Carrier concentration distribution analysis in compound semiconductors | |||||
| MA | Integrated stress analysis technology | |||||
| MA | OLED | Ultra-low contrast imaging technology for layer structures | ||||
| MA | CCL/FCCL | Soft material slicing technology | ||||
| MA | General materials analysis (SEM/FIR CS/Reversed MA/SAMS) | |||||
| IC底隅分析-IC failure analysis | FA | Compound Semiconductor | High voltage and high temperature test (1000V, 300C) | 10.6% (Quarter) 16.42 M (Month) | 8% (Quarter) 15.36 M (Month) | Al issue |
| FA | Ultrathin sample preparation technology for EFA | |||||
| FA | Circuit edit technology | Signal lead technology | ||||
| FA | Backside signal lead technology | |||||
| FA | Adding external multiple passive components technology | |||||
| FA | Precise local RDL removal technology | |||||
| FA | Flipchip front side FIB technology / 5nm IC backside | |||||
| FA | General failure analysis (decap/delayer/electrical property/CRO/IC Reverse/SAT/3D | |||||
| 矽光子&Al晶片-SIPh & Al Chip | MA | SIPh structure | SIPh / Large-area rapid cutting method / Conductive / Low-curtain effect preparation | 7% (Quarter) 10.86 M (Month) | 7.7% (Quarter) 14.81 M (Month) | Strengthen collaboration |
| FA | SIPh photoelectricity test | Light characteristics, IL test, waveguide, uisms | ||||
| FA | Waveguide abnormality fault isolation, circuit break, light leakage detection test | |||||
| FA | 12-inch SIPh photometric platform, automatic scan coupling, high-power light source, temperature, device characteristic table | |||||
| MA | Advanced package | PFB / Hybrid metal bond / TSV analysis technology | ||||
| FA | Advanced package FA | Full layer parallel lapping, um to nm fault isolation, pre-ion-beam preparation technology | ||||
| FA | Advanced package | Large IC and substrate separation technology, THz-TDR / Thermal XYZ / 3D X-ray analysis, BGA-reball | ||||
| 海外-Dverseen | MA | Special ALD preparation / Super-thin lamella technology | Advanced PR protection / Low-k structure protection / High aspect ratio TEM technology | 18.7% (Quarter) 29 M (Month) | 32.4% (Quarter) 61.99 M (Month) | China + Overseas |
| 矽光子凋試設備回鎖售-SIPh test & HG sales | EQ sales | IR test technology | Three self-assembled units are already stably serving multiple customers for SIPh R&D analysis, expanding the business model by leveraging existing technologies to assemble mass-production equipment for sale to customers. | MSS HG |
Key Institutional Investor Focus: Changes in Market Landscape
- Changing global market dynamics are opening new growth avenues and influencing our strategic positioning.
- Revenue exposure to Mainland China continues to rise, driven by accelerated semiconductor development and increasing demand for advanced materials characterization services
ML&M
MATERIAL SCIENCE SERVICE
Confidential, Do Not Copy Without Permission
Form No: Q4-MA01 Ver.1.2
Key Institutional Investor Focus: Changes in Market Mix
Sustained >80% Mix of High-Barrier MA Services
Ensuring a Structurally Superior Gross Margin Profile
MA
MATERIAL SCIENCE SERVICE
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Form No: Q4-MA01 Ver.1.2
Page.17
Strategic Inflection Point: From Steady Profit to Structural Explosion
2.18 B
2015-2025 Revenue Compound Growth Rate (CAGR)
Four Major Growth Drivers for 2026
Angstrom Generation
Silicon Photonics
AI Zone (Expansion of US Clients)
Global Layout
M
MATERIAL SCIENCE SERVICE
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Form No: Q4-MA01 Ver.1.2
Talent Arms Race: Preparing for Explosive Demand in 2026
Strategic Investment in Human Capital.
Building a Strong Foundation for Sustainable Future Growth
Human Capital as a Growth Multiplier
- Scaling high-end technical talent aligned with advanced-node demand
- Strengthening silicon photonics testing and R&D capabilities
Execution capacity begins with people — workforce readiness directly translates into scalable production output and revenue growth.
MBMATERIAL SCIENCE SERVICE
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Form No: Q4-MA01 Ver.1.2
Page 19
Company Overview
汎銓科技股份有限公司 (Msscorps Co., LTD)
設立時間 (Established)
民國94年7月27日
July 27, 2005
上市掛牌 (IPO)
民國111年8月31日
August 31, 2022
創辦人 (Founder)
柳紀綸董事長兼總經理
Mr. Gino Liu, Chairman & President
5.34億 (534 M)
資本額(新台幣)
Capital (NTD)
842
員工人數
Employees
核心服務項目 (Core services)
- Materials Analysis (MA) – Providing advanced process R&D support to foundries and equipment/material suppliers
- Failure Analysis (FA) – Assisting IC design houses and manufacturers in rapid root cause identification and defect resolution
MS
MATERIAL SCIENCE SERVICE
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Form No: Q4-MA01 Ver.1.2
The role of MSS in the semiconductor industry supply chain-FA
Item & Positioning
Content
Failure analysis service (IC Hospital)
IC Design / Photomask
Packaging / Substrate / Flexible Board / PCB Applications
Resolving IC Design Errors and Identifying Root Causes of IC Failures to Accelerate Time-to-Market
- IC debugging and repair, enabling designers to pinpoint design flaws and validate corrective actions
- Post-production analysis of defective units, including re-measurement, fault localization, structural and compositional analysis using EFA & PFA technologies to determine root causes
MSSCORPS' Low-Damage Analytical Technologies
- Originated from leading foundry requirements and extended downstream across the semiconductor ecosystem
- Increasing material diversity, hardness variation, thinner layers, and weaker interlayer bonding demand advanced protection techniques
- Developed proprietary protection processes and patents to minimize thermal and electrical interference and prevent human-induced defects
Failure analysis Process
Non-destructive inspection
Vocal inspection
Inner inspection by X-ray
Inner inspection by C-SAM
IV Curve Tracer
Hot spot was found
AD X-ray inspection hot spot
TEM E200 inspection
FIB cross-section inspection
Accurate positioning by EBIC
EBIC positioning
Gate leakage was found
C-6FM scan restart layer
SEMVC inspection after delayer
Hot spot was found
GIBBIC II positioning
Fault location analysis
Device level inspection after delayer
MSS
MATERIAL SCIENCE SERVICE
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Form No: Q4-MA01 Ver.1.2
The role of MSS in the semiconductor industry supply chain-MA
M&S MATERIAL SCIENCE SERVICE
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Form No: Q4-MA01 Ver.1.2
Page.22
Item & Position
Materials Analysis (R&D leader)
Fab Eqpt. Materials
Content
Providing transistor structure and composition analysis enables FAB to quickly achieve the following tasks:
- Developing state-of-the-art processes, determining new equipment models/new materials/process parameters
- Implementing mass production; newly built production line equipment must demonstrate consistency with the RD line
- During mass production, continuously improving production line yield
If MSS's technology stagnates or slows down, our clients' R&D schedules will be delayed!
MA process
Case in Preparation
FIB
FIB+Pick up
TEM
Imaging+EDS
Data
Al auto-meas.
Report
Data org.
Patent
Platent period
Patent period
Patent period
2022~2040
2022~2041
2022~2040
MSS SiPh patents
矽光子「光損偵測裝置」台灣、日本、美國發明專利證書
MATERIAL SCIENCE SERVICE
Form No: Q4-MA01 Ver.1.2
Page.23
Disclaimer
- This report only states analysis result on the analyzed sample. Not including the sample WITHOUT being tested.
- The EDS (energy dispersive X-ray spectroscopy) analysis is a semi-quantitative, the concentration is NOT calibrated. It is NOT allowed to use as certification of product quality and process performance.
- Those elements are not be detected in this analysis, it doesn't mean they didn't exist, they are below the detection limit of this analytical method.
- This Report is proprietary information for the sole use of its intended recipient.
- Any unauthorized review, use or distribution by anyone other than the intended recipient is strictly prohibited.
- If you are not the intended recipient, please notify the sender by replying to this email, and then delete this email and any copies of it immediately. Thank you.
MATERIAL SCIENCE SERVICE
Your best R&D partner
1F,NO.27,Pu-ding Rd., Hsin-chu 30072,Taiwan,R.O.C
+886-3-6663298