WEEBIT NANO LTD — Investor Presentation 2018

Mar 19, 2018

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March 2018

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Weebit Nano AT A GLANCE

Listed on the ASX in August 2016

Targeting the memory market which is estimated at > USD$100B R&D and HQ in Israel, R&D partnership with CEA-Leti, France Business & Tech partners – CEA-Leti France & Rice University, USA Developing next-gen solution based on Silicon Oxide (SiOx) ReRAM Patents Registered in the USA

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SHARE INFORMATION

CAPITAL STRUCTURE

01 ASX Code: WBT 02 Share price: 5.0c[1] 03 Shares on issue: 1443m[1] 04 Options: 150m[1,2] 05 Market cap: A$72m[1]

06 Cash: $3.4m[3]

1. As of 16 March 2018

2. Including performance shares

3. As of 31 December 2017

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SHAREHOLDING BREAKDOWN
7.57% 44.91% 47.52%
TOP 20 OTHER
BOARD &
MANAGEMENT Excluding Board &
Management
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INTRODUCING DR. YOAV NISSAN-COHEN

• PhD in Applied Physics focused on SiOx memories

• Guided by Prof. Dov Frohman, the inventor of the first Non-Volatile memory

• Consulted to Intel corporation on Non-Volatile Memories

• Researcher in GE R&D center in NY, focused on semiconductor devices

• Extensive experience as a CEO of public and private companies

• CEO of Tower semiconductors (NASDAQ:TSEM) for 9 years, leading the spinout from National Semiconductor

• Chairman & CEO of Amimon, a semiconductor startup, for 7 years

• Chairman & CEO of Zullavision, a technology startup, for 4 years

• 2 years Partner in $1B Pitango Venture Capital fund

• Board member of Saifun Semiconductor, pioneering NROM Flash

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INTRODUCING FRED BART

• Transformed his family business to a $200M business

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• Vast business experience in many different domains

• Including multiple ASX listed companies

• Chairman and major shareholder of Electro Optics Systems (ASX:EOS)

• Market capitalisation of $263M[1]

• Chairman of Audio Pixels (ASX:AKP) since 2010

• Market capitalisation of $454M[1]

• Acquired and turned around multiple companies

• Owns multiple companies worldwide

• 1) As of 19 March, 2018

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FIRST CLASS LEADERSHIP TEAM

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EXECUTIVE DIRECTOR CHAIRMAN CEO CTO CFO
PhD. in Applied Physics, Ex-Intel EVP Extensive management Two decades in 20 Years CPA experience
focus on SiOx memories IEEE Fellow and sales experience Semiconductor engineering
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CEO of Tower Semiconductor for 9 years

Led Intel into the 37 years in the Data Center semiconductor domain

Board member, Brought to Market: Saifun Semiconductor Centrino™ mobile (NROM Flash) technology

Heavily involved in Verisity and Jasper acquisitions

45nm NOR Flash

Senior Manager at PWC Israel

Technology Development at Micron

Active Board member of Was part of Automotive multiple companies in division at Intel TASE and NASDAQ

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HIGHLY SKILLED NON-EXEC/ADVISORY TEAM

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DIRECTOR DIRECTOR DIRECTOR INVENTOR
Chairman and major 15 years in Investment Banking Extensive management Scientist of the Year 2013
shareholder of Electro and financial experience R&D magazine
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Chairman and major shareholder of Electro Optics Systems (EOS)

Founding member of Investec Bank Australia

Led the financial teams at a number of publicly traded international companies

Inducted to the National Academy of inventors

Chairman of Audio Pixels (AKP)

Founding General Partner, OurCrowd

Feynman prize in Nano science

Owns a wide variety of companies worldwide

Strong experience in equity raisings for public companies

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WEEBIT ReRAM TECHNOLOGY Next generation memory technology

Faster and more efficient than flash memory

On track to achieve 40nm 1Mb array by mid-2018 – comparable with current embedded memory technology

Key differentiator: WBT uses silicon oxide – the most commonly used material in the semiconductor industry

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Silicon oxide enables lower cost and shorter time to market

Confidential

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EXPECTATIONS MET Every committed milestone met ON TRACK to reach 40nm Mbit array by mid-2018

Feb 2017 40nm Array results

NOV 2017 40nm working cells OCT 2017

300nm 4Kbit Array

MAY 2017 Miniaturisation started

NOVEMBER 2016 Successful Technology transfer to Leti

SEPT 2016 Development kicked off at Leti

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ALLIANCE WITH CEA - LETI

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A real partnership, with ideal mix of expertise, innovation and flexibility
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FROM PROTOTYPES TO PRODUCTION

Proven international track record in moving from R&D to production

MEMORY EXPERTISE

Over 10 years of experience in memory technology development

NANOTECHNOLOGY SPECIALIST

State of the art industrial tools

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MANUFACTURING ALLIANCES

Over 330 industrial partners

INNOVATION HUB

60+ start-ups in semiconductor, architectures or software

COLLABORATION

Working on 40nm SiOx development since September 2016

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CUSTOMERS

Intel, ST Microelectronics, Global foundries

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ReRAM: FORECAST FOR EXPONENTIAL GROWTH IN MARKET VALUE

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o Emerging memory technologies forecast for significant growth

• ReRAM technology expected to be the fastest growing emerging memory technology with a CAGR of 119%

o ReRAM forecast growth due to competitive cost/performance in both storage class memory and mass storage applications

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ReRAM DENSITY WILL MATCH FLASH

Highest capacity memory chips best address Storage Class Memory

= Flash

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NEUROMORPHIC COMPUTATION

ReRAM well positioned for significant growth in Artificial Intelligence

• ReRAM’s operation mimics the biological computation at the synaptic level

• Physical similarities lead to functional similarities

• Combines memory and processing units using synapse and neuron like cells

• ReRAM for AI is significantly more energy efficient than today’s data centres, and significantly smaller

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• ReRAM is therefore very well placed to capitalise on the emergence of AI Ions migration leads to resistivity modulation capabilities

ReRAM technology enables brain-inspired AI systems

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ReRAM COMPETITIVE LANDSCAPE

Speed to market is a significant competitive advantage

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Materials*	Silicon Oxide	Pr, Ca, Mn Silver	Tellurium
Memory Capacity	40nm 4Kb achieved Mb Array by mid-2018	Start work on Mb Array 8Mb Array	512Kb
Retention	10Y > room temp	No data 10Y @ 85 °C	40Y @ 125 °C
Endurance	105 **	103 106	105
Dimension	40nm	40nm 40nm	130nm
Development time	<2 years	7 years 7 years	>10 years
*** Pr, Ce– rare earthMn Ag, Ca**– not fab friendly		** moving to 106
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2018 PLANS

TECHNICAL

• Develop a 40nm Mbit array by mid-2018

• Addresses most needs of the embedded memory market

• Improved endurance and retention to meet industry standards by end 2018

• Define a plan and be on the path to develop 28nm technology

• Will open up new potential uses for WBT’s technology

BUSINESS

• Sign first cooperation agreement with a key industry player

• Explore collaborations with other technologies that can complement WBT’s technology

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DISCLAIMER

This presentation contains certain statements that constitute forward-looking statements. Examples of such statements include, but are not limited to, statements regarding the design, scope, initiation, conduct and results of our research and development programs; our plans and objectives for future operations; and the potential benefits of our products and research technologies. In some cases, forwardlooking statements can be identified by the use of terminology such as “may,” “will,” “expects,” “plans,” “anticipates,” “estimates,” “potential” or “continue” or the negative thereof or other comparable terminology. These statements involve a number of risks and uncertainties that could cause actual results and the timing of events to differ materially from those anticipated by these forward-looking statements. These risks and uncertainties include a variety of factors, some of which are beyond our control. All forward-looking statements and reasons why actual results may differ are based on information available to us when initially made, and we assume no obligation to update these forward-looking statements or reasons why actual results might differ or the information set forth herein. In addition, we do not make any representations or warranties, express or implied, with regard to the information included in this presentation of any other related document or information disclosed or furnished in connection thereto, including, without limitation, with respect to the accuracy, reliability, completeness or its sufficiency for any particular purpose. This information is proprietary and confidential of Weebit and is provided on a confidential basis and may not be disclosed or used without our prior written consent. You acknowledge that the disclosure and use of the information may be further prohibited under applicable securities or other laws. This presentation is made for informational purposes only and does not constitute an offer to sell any interest in Weebit not does it form the basis of any contract or agreement between the parties.

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THANK YOU

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