WEEBIT NANO LTD — Investor Presentation 2018

May 14, 2018

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May 2018

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Weebit Nano AT A GLANCE

Listed on the ASX in August 2016 Targeting the memory market which is estimated at > USD$100B R&D and HQ in Israel, R&D partnership with CEA-Leti, France Business & Tech partners – CEA-Leti France & Rice University, USA Developing next-gen solution based on Silicon Oxide (SiOx) ReRAM Patents Registered in the USA

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SHARE INFORMATION

CAPITAL STRUCTURE

01 ASX Code: WBT 02 Share price: 6.6c[1] 03 Shares on issue: 1443m[1] 04 Options: 150m[1&2] 05 Market cap: A$95.2m[1] 06 Cash: A$4.2m[3]

1. As of 8 May 2018

2. Including performance shares

3. As of 31 March 2018

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SHAREHOLDING BREAKDOWN
7.57% 44.50% 47.93%
TOP 20 OTHER
BOARD &
Excluding Board &
MANAGEMENT
Management
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Confidential
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LEADERSHIP TEAM

CTO EXECUTIVE DIRECTOR CHAIRMAN CEO CFO PhD. in Applied Physics, Ex-Intel EVP Extensive management Two decades in 20 Years CPA experience focus on SiOx memories IEEE Fellow and sales experience Semiconductor engineering CEO of Tower Led Intel into the 38 years in the 45nm NOR Flash Senior Manager at Technology Development PWC Israel Semiconductor for 9 years Data Center semiconductor domain at Micron Board member, Brought to Market: Active Board member of Heavily involved in Was part of Automotive Saifun Semiconductor Centrino™ mobile multiple companies in Verisity and Jasper division at Intel (NROM Flash) technology TASE and NASDAQ acquisitions

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NON-EXEC/ADVISORY TEAM

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DIRECTOR DIRECTOR DIRECTOR INVENTOR
Chairman and major 15 years in Investment Banking Extensive management Scientist of the Year 2013
shareholder of Electro and financial experience R&D magazine
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Chairman and major shareholder of Electro Optics Systems (EOS)

Founding member of Investec Bank Australia

Led the financial teams at a number of publicly traded international companies

Inducted to the National Academy of inventors

Chairman of Audio Pixels (AKP)

Founding General Partner, OurCrowd

Feynman prize in Nano science

Owns a wide variety of companies worldwide

Strong experience in equity raisings for public companies

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WEEBIT ReRAM TECHNOLOGY

Next generation memory technology

Faster and more efficient than flash memory

On track to achieve 40nm 1Mb array by mid-2018 – comparable with current embedded memory technology

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Key differentiator: WBT uses silicon oxide – the most commonly used material in the semiconductor industry

Silicon oxide enables lower cost and shorter time to market

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Confidential
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RERAM VS. FLASH

The parameters needed for the next generation memory solution are:

	Flash (3D-NAND)	Flash (3D-NAND)	Weebit’s ReRAM	Weebit’s ReRAM
Speed	Does not provide any speed improvement for tomorrow’s needs	X	Faster programming and read operations	
Energy Efficiency	No power improvement per bit, consumes higher energy	X	Energy efficient by low voltage and fast write	
Manufacturability	Very challenging manufacturing process	X	Utilises standard material and machinery	
Density	Provides increased capacity for the near future		Scalability allows higher future density	
Reliability	High error rate and limited endurance	X	Significantly higher endurance	

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EXPECTATIONS MET

Feb 2018

Every committed milestone met

40nm 4Kbit Array results

ON TRACK to reach 40nm 1 Mb array by mid-2018

NOV 2017 40nm working cells OCT 2017

300nm 4Kbit Array

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MAY 2017 Miniaturisation started

NOVEMBER 2016 Successful Technology transfer to Leti

SEPT 2016 Development kicked off at Leti

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STEPS TOWARDS COMMERCIALISATION

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Mid Q1 Q4 Q4
> 2021
2018 2019 2019 2020
40nm 4Kb Array 1Mb Array Process 28nm/300mm Production Fab IP revenues
demonstrated Demonstration Optimisation Integration Qualification
Done
1Mb Wafers Baseline
State of the Technology
manufacturing improvement to art embedded transfer and IP
and Basic achieve robust
process qualification
functionality Technology readiness
parameters
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• Timeline refers to calendar year

ALLIANCE WITH CEA – LETI*

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A real partnership, with ideal mix of expertise, innovation and flexibility
France-based research institute for electronics and information technologies
Leti assists companies to bridge the gap between research and manufacturing
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FROM PROTOTYPES TO PRODUCTION

Proven international track record in moving from R&D to production

MEMORY EXPERTISE

Over 10 years of experience in memory technology development

NANOTECHNOLOGY SPECIALIST

State of the art industrial tools

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MANUFACTURING ALLIANCES

Over 330 industrial partners

INNOVATION HUB

60+ start-ups in semiconductor, architectures or software

COLLABORATION

Working on 40nm SiOx development since September 2016

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CUSTOMERS

Intel, ST Microelectronics, Global foundries

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*LETI, A SUBSIDIARY OF FRANCE’S NUCLEAR AND RENEWABLE ENERGY COMMISSION COMMISSION. HTTP://WWW.LETI-CEA.COM/CEA-TECH/LETI/ENGLISH/PAGES/WELCOME.ASPX

MEMORY MARKET OVERVIEW

Huge market experiencing exponential growth

• Embedded memory market worth ~US$25B[1]

• Flash produced by all fabs

• Flash memory market size ~US$35B

• Fabs can easily retool to produce ReRAM

2016 Embedded Memory Market Market in 2016 - $24.6B

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11% MCU SRAM
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23% High Performance CPU SRAM

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45%
21%
Mobile MPU
MCU NVM
SRAM
1. Source: Yoal 2017
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2016 Semiconductor memory market

• 2% EEPROM/ROM/EPROM/Others

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2% NOR
1% SRAM
43%
NAND 52%
DRAM
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ReRAM: FORECAST FOR EXPONENTIAL GROWTH IN MARKET VALUE

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o Emerging memory technologies forecast for significant growth

o ReRAM technology expected to be the fastest growing emerging memory technology with a CAGR of 119%

o ReRAM forecast growth due to competitive cost/performance in both storage class memory and mass storage applications

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ReRAM DENSITY WILL MATCH FLASH

Highest capacity memory chips best address Storage Class Memory

= Flash

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NEUROMORPHIC COMPUTATION

ReRAM well positioned for significant growth in Artificial Intelligence

• ReRAM’s operation mimics the biological computation at the synaptic level

• Physical similarities lead to functional similarities

• Combines memory and processing units using synapse and neuron like cells

• ReRAM for AI is significantly more energy efficient than today’s data centres, and significantly smaller

• ReRAM is therefore very well placed to capitalise on the emergence of AI capabilities

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Ions migration leads to resistivity modulation

ReRAM technology enables brain-inspired AI systems

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ReRAM COMPETITIVE LANDSCAPE

Speed to market is a significant competitive advantage

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				Materials	*	*												Silicon Oxide	Silicon Oxide	Silicon Oxide	Silicon Oxide	Silicon Oxide	Silicon Oxide	Silicon Oxide	Silicon Oxide	Silicon Oxide	Silicon Oxide	Silicon Oxide													Pr,	Pr,	Ca, Mn	Ca, Mn	Ca, Mn	Ca, Mn	Ca, Mn	Ca, Mn	Ca, Mn	Ca, Mn	Ca, Mn								Silver	Silver	Silver	Silver						Tellurium	Tellurium	Tellurium	Tellurium	Tellurium
				Memory Capacity														40nm 4Kb achieved Mb Array by mid-2018																							Start work on Mb Array																		8Mb Array									512Kb
				Retention														10Y			>	room temp																			No		data																10Y		@ 85			°C				40Y	@ 125				°C
				Endurance														105 **																							103																		106									105
				Dimension														40nm																							40nm																		40nm									130nm
				Development time															<2	years																					7	years																	7	years								>10	years

*** Pr, Ce – rare earth Mn Ag, Ca – not fab friendly _ moving to 10[6] Based on public information_ 15

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2018 PLANS

TECHNICAL

• Develop a 40nm Mbit array by mid-2018

o Addresses most needs of the embedded memory market

• Improve endurance and retention to meet industry standards by end 2018

• Define a plan and be on the path to develop 28nm technology

o Will open up new potential uses for WBT’s technology

BUSINESS

• Sign first cooperation agreement with a key industry player

• Explore collaborations with other technologies that can complement WBT’s technology

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DISCLAIMER

This presentation contains certain statements that constitute forward-looking statements. Examples of such statements include, but are not limited to, statements regarding the design, scope, initiation, conduct and results of our research and development programs; our plans and objectives for future operations; and the potential benefits of our products and research technologies. In some cases, forwardlooking statements can be identified by the use of terminology such as “may,” “will,” “expects,” “plans,” “anticipates,” “estimates,” “potential” or “continue” or the negative thereof or other comparable terminology. These statements involve a number of risks and uncertainties that could cause actual results and the timing of events to differ materially from those anticipated by these forward-looking statements. These risks and uncertainties include a variety of factors, some of which are beyond our control. All forward-looking statements and reasons why actual results may differ are based on information available to us when initially made, and we assume no obligation to update these forward-looking statements or reasons why actual results might differ or the information set forth herein. In addition, we do not make any representations or warranties, express or implied, with regard to the information included in this presentation of any other related document or information disclosed or furnished in connection thereto, including, without limitation, with respect to the accuracy, reliability, completeness or its sufficiency for any particular purpose. This information is proprietary and confidential of Weebit and is provided on a confidential basis and may not be disclosed or used without our prior written consent. You acknowledge that the disclosure and use of the information may be further prohibited under applicable securities or other laws. This presentation is made for informational purposes only and does not constitute an offer to sell any interest in Weebit not does it form the basis of any contract or agreement between the parties.

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THANK YOU

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