WEEBIT NANO LTD — Investor Presentation 2017

Sep 10, 2017

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September 2017

KEY INVESTMENT HIGHLIGHTS

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MASSIVE STORAGE DEMAND

Exponential increase in demand for memory storage

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EXCELLENT DEVELOPMENT RESULTS

Scaled devices with a memory array significantly faster than Flash memory imminent

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KEY DEVELOPMENT PARTNERSHIP

CEA-Leti, world-class research institution

MARKET DRIVERS

Content explosion and Artificial Intelligence (AI) are creating new opportunities for memory technologies (e.g. ReRAM)

ON TRACK

On target for a working 40nm cell by year end of 2017

ADDRESSABLE MARKET > USD$40B+

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Confidential

SHARE INFORMATION

CAPITAL STRUCTURE

SHAREHOLDING BREAKDOWN

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01 ASX Code: WBT
02 Share price: 1.8 cents
03 Shares on issue: 1176m
04 Options: 80.3m
05 Market cap: $10.8m
06 Cash (30 Jun 17): $1.7m
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9.15% 50.92% 39.93%
TOP 20 OTHER
BOARD &
Excluding Board &
MANAGEMENT
Management
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*As of 08 Sep 2017

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Weebit Nano AT A GLANCE

Listed on the ASX in August 2016

Targeting the storage market which is estimated at > USD$40B R&D and HQ in Israel, R&D partnership with CEA-Leti, France Business & Tech partners – CEA-Leti France & Rice University, USA Developing next-gen solution based on Silicon Oxide (SiOx) ReRAM Patents Registered in the USA

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LEADERSHIP TEAM

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CEO
INVENTOR CHAIRMAN
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Ex-Intel EVP IEEE Fellow

Extensive management and financial experience

Scientist of the Year 2013 R&D magazine

Inducted to the National Academy of inventors

Has led intel into the Data Center

Financially led a variety of international companies

Feynman prize in Nano science

Brought to Market: Centrino™ mobile technology

Experience in equity raisings for public companies

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VP R&D
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Two decades in Semiconductors engineering

45nm NOR Flash Technology Development at Micron

Was part of Automotive division at Intel

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*Outgoing, to be replaced by new CEO effective October 2017

Confidential

EXPECTATIONS MET

Every committed milestone met

ON TRACK to reach 40nm miniaturisation by end of 2017

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SEPT 2017

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300nm Array imminent & 40nm engineering with fast write speeds

MAY 2017

Miniaturisation started MARCH 2017 Electrical results validation

NOVEMBER 2016

Successful Technology transfer to Leti

SEPT 2016 Development kicked off at Leti

2008-2016 SiOx ReRAM first pioneered at Rice university

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Confidential

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SEEING IS BELIEVING

Magnified images of our ReRAM semiconductor chip

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1Kb Array Cells

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40nm ReRAM Cell

6500x 20,000x M A G N I F C A T I O N M A G N I F C A T I O N

50,000x 200,000x M A G N I F C A T I O N M A G N I F C A T I O N

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S P E E C H R E C O G N I T I O N

P R E D I C T I V E A U T O N O M O U S T R A N S L A T I O N A N A L Y T I C S C A R S R E C O G N I T I O N

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INTELLIGENT MACHINES Becoming part of our everyday lives

P E R S O N A L

I M A G E R E C O G N I T I O N

A S S I S T A N C E

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Confidential

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DATA EXPLOSION IS COMING

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INDUSTRY ENDORSEMENT

NEW DATA ECONOMY

Marc Durcan Micron CEO Micron Feb 2017

“We live in a new data economy that will generate huge amounts of data. Autonomous vehicles and the network that connects them will generate lots of data. The Internet of Things will also be a big source of data. Cognitive computing and artificial intelligence will be used to analyze much of this data”

Confidential

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Now -The AI era Re VIRTUOUS CYCLE RAM 2015 3D NAND Innovation drives 256 80’s Flash GB technology which in turn generates 128 GB new demands. Faster and more Energy 60’s Magnetic GB efficient Hard Drive Unprecedented Data Storage Laptop & 5MB Smart phone 1956 IBM 1st magnetic drive Desktop

VIRTUOUS CYCLE

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A BETTER FIT WITH EMERGING COMPUTER ARCHITECTURES

Storage Class Memory (SCM) - Closes the Gap between Memory & Computing

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LOCAL,
LOW ENERGY & FAST
Weebit
Volatile memory ReRAM
COMPUTING SRAM DRAM
HUGE GAP
SPEED 1-20ns 50-100ns >100ns
ns 1 billionths of a second
us 1 millionths of a second
ms 1 thousandths of a second Confidential
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LOCAL, LOW ENERGY & FAST Volatile memory

REMOTE, HIGH ENERGY & SLOW Non-Volatile Storage Hard Disk Flash SSD Drive 100us-3ms 5ms-10ms

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WEEBIT ReRAM TECHNOLOGY Designed for next generation technology

ENERGY EFFICIENCY Ultra Low Power

SPEED – READ AND WRITE Significantly faster than Flash

INTEGRATION Bringing the memory closer to the processor

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LOW COST / NO SPECIAL MANFACTURING TECHNOLOGY & NO RETOOLING

Manufacturability - minimum added process steps and cost

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PROMISING TECHNOLOGY

Ultra-fast write speed performance coupled with low energy requirements

FAST Very fast write speeds Significantly faster than flash memory

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ENERGY EFFICIENT SCALABLE Standard components 40nm array engineering voltage levels Ongoing integration, Very low voltage similar density to Flash levels memory

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BEST MANUFACTURBILITY = SHORTEST TIME TO MARKET

SILICON OXIDE Weebit NANO NEXT-GEN MEMORY SOLUTION

• ✓ Fab Friendly – 50 year process & manufacturing experience

• ✓ Compatibility – well integrated with existing proven processes

SILICON OXIDE MANUFACTURABLE ANYWHERE

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ReRAM Not Used in Semiconductor Fabs Used in Semiconductor Fabs

• ✓ Any Fab – no need for specialised foundry

• ✓ Any Tool – no need for special tool

• ✓ Any process – no need for special process

Silicon Oxide – Shortest time to market

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COMPETITIVE ADVANTAGE

Faster and Cheaper to Manufacture

Materials

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Silicon Oxide Pr, Ca, Mn* Silver

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Tellurium

Manufacturability

Production ready Difficult to run in Difficult to run in Difficult to run in materials a production Fab a production Fab a production Fab

Speed

Fast RD & WT

Fast RD Fast RD & WT no data on WT

Fast RD & WT

Conclusions

Most cost High Cost of High Cost of High Cost of effective process manufacturing manufacturing manufacturing

Based on public information

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Pr, Ce – rare earth Mn Ag, Ca – not fab friendly

SHORTEST TIME TO PROTOTYPE

Memory Capacity

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Kb Array this year No Array was 8Mb Array 512Kb Mb Array next year published

Dimension

300nm 40nm 40nm

40nm 130nm

Development <2 years 7 years time*

7 years >10 years

Based on public information

*Time to commercially viable product

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ALLIANCE WITH CEA - LETI

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FROM PROTOTYPES TO PRODUCTION

Proven international track record in moving from R&D to production

MEMORY EXPERTISE

Over 10 years of experience in memory technology development

NANOTECHNOLOGY SPECIALIST

State of the art industrial tools

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MANUFACTURING ALLIANCES

Over 330 industrial partners

INNOVATION HUB

60+ start-ups in semiconductor, architectures or software

COLLABORATION

Working on 40nm SiOx development since September 2016

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CUSTOMERS

Intel, ST Microelectronics, Globalfoundries

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TECHNOLOGY ROADMAP & KEY BUSINESS MILESTONES

~~TEC~~ HNOLOGY DEVELOPMENT

BUSINESS DEVELOPMENT

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Technology Technology Demonstration PARTNERSHIP WITH INDUSTRY LEADERS
transfer to Leti Initial discussion with Industry
leaders (manufacturing,
components, systems, Industry
leaders
Integration and characterisation
Scaling towards 300nm
300nm Kb 40nm 1Mb array
40nm Working cells targeted 40nm
Array
Significant Milestone Towards Working
40nm
40nm
cells 40nm
Kb Array
Mb Array
2017 2018
STRATEGY
MINIATURIZATION
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KEY INVESTMENT HIGHLIGHTS

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MASSIVE STORAGE DEMAND

Exponential increase in demand for memory storage

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EXCELLENT DEVELOPMENT RESULTS

Scaled devices with a memory array significantly faster than Flash memory imminent

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KEY DEVELOPMENT PARTNERSHIP

CEA-Leti, world-class research institution

MARKET DRIVERS

Content explosion and Artificial Intelligence (AI) are creating new opportunities for memory technologies (e.g. ReRAM)

ON TRACK

On target for a working 40nm cell by year end of 2017

ADDRESSABLE MARKET > USD$40B+

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DISCLAIMER

This presentation contains certain statements that constitute forward-looking statements. Examples of such statements include, but are not limited to, statements regarding the design, scope, initiation, conduct and results of our research and development programs; our plans and objectives for future operations; and the potential benefits of our products and research technologies. In some cases, forwardlooking statements can be identified by the use of terminology such as “may,” “will,” “expects,” “plans,” “anticipates,” “estimates,” “potential” or “continue” or the negative thereof or other comparable terminology. These statements involve a number of risks and uncertainties that could cause actual results and the timing of events to differ materially from those anticipated by these forward-looking statements. These risks and uncertainties include a variety of factors, some of which are beyond our control. All forward-looking statements and reasons why actual results may differ are based on information available to us when initially made, and we assume no obligation to update these forward-looking statements or reasons why actual results might differ or the information set forth herein. In addition, we do not make any representations or warranties, express or implied, with regard to the information included in this presentation of any other related document or information disclosed or furnished in connection thereto, including, without limitation, with respect to the accuracy, reliability, completeness or its sufficiency for any particular purpose. This information is proprietary and confidential of Weebit and is provided on a confidential basis and may not be disclosed or used without our prior written consent. You acknowledge that the disclosure and use of the information may be further prohibited under applicable securities or other laws. This presentation is made for informational purposes only and does not constitute an offer to sell any interest in Weebit not does it form the basis of any contract or agreement between the parties.

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THANK YOU

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STORAGE CLASS MEMORY – A PRIMER

Bridging the gap between memory & storage

Very Fast, close to the CPU but very Expensive

CPU VOLATILE MEMORY loses data when power is off SRAM DRAM

STORAGE CLASS MEMORY

Slow, cheap but far from the CPU

SSD - Flash Hard Drive - Magnetic

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NON-VOLATILE MEMORY Data is stored even when power is off

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Confidential