WEEBIT NANO LTD — Investor Presentation 2017

Nov 28, 2017

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November 29, 2017

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Weebit Nano AT A GLANCE

Listed on the ASX in August 2016

Targeting the storage market which is estimated at > USD$40B R&D and HQ in Israel, R&D partnership with CEA-Leti, France

Business & Tech partners – CEA-Leti France & Rice University, USA Developing next-gen solution based on Silicon Oxide (SiOx) ReRAM Patents Registered in the USA

Confidential

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KEY INVESTMENT HIGHLIGHTS

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MASSIVE STORAGE DEMAND

Exponential increase in demand for memory storage

EXCELLENT DEVELOPMENT RESULTS

Scaled devices with a memory array significantly faster than Flash memory imminent

KEY DEVELOPMENT PARTNERSHIP

CEA-Leti, world-class research institution

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MARKET DRIVERS

Content explosion and Artificial Intelligence (AI) are creating new opportunities for memory technologies (e.g. ReRAM)

ON TRACK

Working 40nm cells achieved before year end of 2017, on track for 1Mbit by mid 2018

ADDRESSABLE MARKET

USD$40B+

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SHARE INFORMATION

SHAREHOLDING BREAKDOWN CAPITAL STRUCTURE 01 ASX Code: WBT 02 Share price: 7.6c[*] 7.84% 45.86% 46.30% 03 Shares on issue: 1391m 04 Options: 201m[] TOP 20 OTHER 05 Market cap[] : A$106m BOARD & MANAGEMENT Excluding Board & Management 06 Cash (15 Nov 17): $1.7m*

CAPITAL STRUCTURE

*As of 27 Nov 2017

**Including Options subject to approval at AGM and existing Options & Performance Shares

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LEADERSHIP TEAM

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CEO VP R&D
INVENTOR CHAIRMAN
Scientist of the Year 2013 Ex-Intel EVP Extensive management Two decades in
R&D magazine IEEE Fellow and sales experience Semiconductors engineering
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Inducted to the National Academy of inventors

Has led intel into the Data Center

37 years in the semiconductor domain

45nm NOR Flash Technology Development at Micron

Feynman prize in Nano science

Brought to Market: Centrino™ mobile technology

Enabled Verisity and Jasper acquisitions

Was part of Automotive division at Intel

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THE NEW CEO

• 37 years in the semiconductor space

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• 15 years in engineering/engineering management

• 22 years in CEO and VP Sales roles

• Verisity SVP WW Sales

• $315M acquisition by Cadence

• Jasper VP WW Sales

• $170M acquisition by Cadence

• Packetlight CEO

• EDAcon Partners

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WEEBIT ReRAM TECHNOLOGY Designed for next generation technology

ENERGY EFFICIENCY Ultra Low Power

SPEED – READ AND WRITE

Significantly faster than Flash

INTEGRATION

Bringing the memory closer to the processor

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LOW COST / NO SPECIAL MANFACTURING TECHNOLOGY & NO RETOOLING

Manufacturability - minimum added process steps and cost

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DATA EXPLOSION IS COMING

“We live in a new data economy that will generate huge amounts of data. Autonomous vehicles and the network that connects them will generate lots of data. The Internet of Things will also be a big source of data. Cognitive computing and artificial intelligence will

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S P E E C H R E C O G N I T I O N

P R E D I C T I V E A U T O N O M O U S T R A N S L A T I O N A N A L Y T I C S C A R S R E C O G N I T I O N

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INTELLIGENT MACHINES

P E R S O N A L A S S I S T A N C E Confidential

I M A G E R E C O G N I T I O N

Becoming part of our everyday lives

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WEEBIT SOLUTIONS FOR THE INDUSTRY

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Building smaller cell is better/cheaper

MORE INFORMATION STORED IN A PIECE OF SILICON WITH A FASTER WRITE AND READ

SILICON OXIDE

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Weebit NANO NEXT-GEN MEMORY SOLUTION

Not Used in Semiconductor Fabs Used in Semiconductor Fabs

• Fab Friendly – 50 year process & manufacturing experience

• Compatibility – well integrated with existing proven processes

Shortest time to market, cheaper, Faster

MANUFACTURABLE ANYWHERE

• Any Fab – no need for specialised foundry

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• Any Tool – no need for special tool

• Any process – no need for special process

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RERAM COMPETITIVE LANDSCAPE

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Market $50M $33M $250M (E) $180M Capitalisation (USD) Memory 40nm cells achieved Start work on 8Mb Array 512Kb Capacity Mb Array by mid-2018 Mb Array Dimension 40nm 40nm 40nm 130nm

Development <2 years 7 years 7 years >10 years time*

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Confidential

COMPETITIVE ADVANTAGE

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Materials	Silicon Oxide	Pr, Ca, Mn	Silver	Tellurium
Manufacturability	Production ready materials	Difficult to run in a production Fab	Difficult to run in a production Fab	Difficult to run in a production Fab
Speed	Fast RD & WR	Fast RD no data on WR	Fast RD & WR	Fast RD & WR
Retention	10Y > room temp	No data	10Y @ 85 °C	40Y @ 125 °C
Endurance	105 *	103	106	105
Production cost	Most cost effective process	Higher Cost of manufacturing	Higher Cost of manufacturing	Higher Cost of manufacturing
Based on public information	* moving to 106
		Confidential

Confidential Pr, Ce – rare earth Mn Ag, Ca – not fab friendly

ALLIANCE WITH CEA - LETI

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Partnering for highly manufacturable ReRAM
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FROM PROTOTYPES TO PRODUCTION

Proven international track record in moving from R&D to production

MEMORY EXPERTISE

Over 10 years of experience in memory technology development

NANOTECHNOLOGY SPECIALIST

State of the art industrial tools

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MANUFACTURING ALLIANCES

Over 330 industrial partners

INNOVATION HUB

60+ start-ups in semiconductor, architectures or software

COLLABORATION

Working on 40nm SiOx development since September 2016

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CUSTOMERS

Intel, ST Microelectronics, Globalfoundries

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OPENED FRENCH SUBSIDIARY

• Enhances the cooperation with Leti

• Weebit will be eligible for French R&D

benefits and tax refunds

• Base for our French employees

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BONJOUR FRANCE!
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EXPECTATIONS MET Every committed milestone met ON TRACK to reach 40nm Mbit array by mid-2018

NOVDEC 2017 40nm working cells

OCT 2017

300nm 4Kbit Array with strong Endurance and retention results

MAY 2017

Miniaturisation started MARCH 2017

Electrical results validation

NOVEMBER 2016 Successful Technology transfer to Leti

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SEPT 2016 Development kicked off at Leti

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EXPECTATIONS MET

40nm working cells Demonstrated one month ahead of schedule!

2018 PLANS

TECHNICAL

• Develop a 40nm Mbit array by mid-2018

• Improved Endurance and Retention to meet industry standards by end 2018

• Define a plan and be on the path to develop 2xnm technology

BUSINESS

• Sign first cooperation agreement with a key industry player

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DISCLAIMER

This presentation contains certain statements that constitute forward-looking statements. Examples of such statements include, but are not limited to, statements regarding the design, scope, initiation, conduct and results of our research and development programs; our plans and objectives for future operations; and the potential benefits of our products and research technologies. In some cases, forwardlooking statements can be identified by the use of terminology such as “may,” “will,” “expects,” “plans,” “anticipates,” “estimates,” “potential” or “continue” or the negative thereof or other comparable terminology. These statements involve a number of risks and uncertainties that could cause actual results and the timing of events to differ materially from those anticipated by these forward-looking statements. These risks and uncertainties include a variety of factors, some of which are beyond our control. All forward-looking statements and reasons why actual results may differ are based on information available to us when initially made, and we assume no obligation to update these forward-looking statements or reasons why actual results might differ or the information set forth herein. In addition, we do not make any representations or warranties, express or implied, with regard to the information included in this presentation of any other related document or information disclosed or furnished in connection thereto, including, without limitation, with respect to the accuracy, reliability, completeness or its sufficiency for any particular purpose. This information is proprietary and confidential of Weebit and is provided on a confidential basis and may not be disclosed or used without our prior written consent. You acknowledge that the disclosure and use of the information may be further prohibited under applicable securities or other laws. This presentation is made for informational purposes only and does not constitute an offer to sell any interest in Weebit not does it form the basis of any contract or agreement between the parties.

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THANK YOU

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