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WEEBIT NANO LTD — Investor Presentation 2017
Nov 29, 2017
66042_rns_2017-11-29_4e1c24d7-b9e8-4d07-8a6e-e7ddff644088.pdf
Investor Presentation
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November 30, 2017
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Weebit Nano AT A GLANCE
Listed on the ASX in August 2016
Targeting the storage market which is estimated at > USD$40B R&D and HQ in Israel, R&D partnership with CEA-Leti, France Business & Tech partners – CEA-Leti France & Rice University, USA Developing next-gen solution based on Silicon Oxide (SiOx) ReRAM Patents Registered in the USA
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KEY INVESTMENT HIGHLIGHTS
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MASSIVE STORAGE DEMAND
Exponential increase in demand for memory storage
EXCELLENT DEVELOPMENT RESULTS
Scaled devices with a memory array significantly faster than Flash memory imminent
KEY DEVELOPMENT PARTNERSHIP
CEA-Leti, world-class research institution
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MARKET DRIVERS
Content explosion and Artificial Intelligence (AI) are creating new opportunities for memory technologies (e.g. ReRAM)
ON TRACK
Working 40nm cells achieved before year end of 2017, on track for 1Mbit by mid 2018
ADDRESSABLE MARKET
USD$40B+
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SHARE INFORMATION
CAPITAL STRUCTURE
SHAREHOLDING BREAKDOWN
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01 ASX Code: WBT
02 Share price: 7.6c [1]
03 Shares on issue: 1391m
04 Options: 201m [2]
05 Market cap [] : A$106m
06 Cash (30 Sep 17): $1.18m [3]
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7.84% 45.86% 46.30%
TOP 20 OTHER
BOARD &
Excluding Board &
MANAGEMENT
Management
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As of 27 Nov 2017
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Including Options subject to approval at AGM and existing Options & Performance Shares
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Does not include net proceeds of $2.5m Capital Raise completed on 3 October 2017 nor does it include the proceeds from the 48.7m Options exercised in November 2017
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LEADERSHIP TEAM
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CEO VP R&D
INVENTOR CHAIRMAN
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Scientist of the Year 2013 R&D magazine
Inducted to the National Academy of inventors
Ex-Intel EVP IEEE Fellow Has led intel into the Data Center
Extensive management and sales experience
37 years in the semiconductor domain
Two decades in Semiconductors engineering
45nm NOR Flash Technology Development at Micron
Feynman prize in Nano science
Brought to Market: Centrino™ mobile technology
Enabled Verisity and Jasper acquisitions
Was part of Automotive division at Intel
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THE NEW CEO
- 37 years in the semiconductor space
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• 15 years in engineering/engineering management
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22 years in CEO and VP Sales roles
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Verisity SVP WW Sales
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$315M acquisition by Cadence
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Jasper VP WW Sales
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$170M acquisition by Cadence
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Packetlight CEO
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EDAcon Partners
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WEEBIT ReRAM TECHNOLOGY Designed for next generation technology
ENERGY EFFICIENCY Ultra Low Power
SPEED – READ AND WRITE Significantly faster than Flash
INTEGRATION Bringing the memory closer to the processor
LOW COST / NO SPECIAL MANFACTURING TECHNOLOGY & NO RETOOLING
Manufacturability - minimum added process steps and cost
DATA EXPLOSION IS COMING
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“We live in a new data that will economy generate huge amounts of data. Autonomous vehicles and the network that connects them will generate lots of data. The Internet of Things will also be a big source of data. Cognitive computing and artificial intelligence will be used to analyze much of this data”
Marc Durcan Micron CEO Micron Feb 2017
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A U T O N O M O U S C A R S
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I M A G E R E C O G N I T I O N
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S P E E C H R E C O G N I T I O N
P R E D I C T I V E T R A N S L A T I O N A N A L Y T I C S R E C O G N I T I O N
INTELLIGENT MACHINES Becoming part of our everyday lives
P E R S O N A L
A S S I S T A N C E
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WEEBIT SOLUTIONS FOR THE INDUSTRY
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Building smaller cell is better/cheaper
MORE INFORMATION STORED IN A PIECE OF SILICON WITH A FASTER WRITE AND READ
SILICON OXIDE
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Weebit NANO NEXT-GEN MEMORY SOLUTION
Not Used in Semiconductor Fabs
Used in Semiconductor Fabs
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ü Fab Friendly – 50 year process & manufacturing experience
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ü Compatibility – well integrated with existing proven processes
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Shortest time to market, cheaper, Faster
MANUFACTURABLE ANYWHERE
- ü Any Fab – no need for specialised foundry
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ü Any Tool – no need for special tool
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ü Any process – no need for special process
RERAM COMPETITIVE LANDSCAPE
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Market Capitalisation (USD)
$50M
$33M $250M (E) $180M
Memory Capacity
40nm cells achieved Start work on 8Mb Array 512Kb Mb Array by mid-2018 Mb Array
Dimension
40nm
40nm
40nm
130nm
Development time
<2 years*
7 years
7 years >10 years
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COMPETITIVE ADVANTAGE
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Materials
Silicon Oxide Pr, Ca, Mn Silver
Tellurium
Manufacturability
Production ready Difficult to run in Difficult to run in Difficult to run in materials a production Fab a production Fab a production Fab
Speed
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Fast RD no data on WR
Fast RD & WR Fast RD & WR
Retention
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Endurance
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Production cost
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Based on public information
* moving to 10[6]
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Pr, Ce – rare earth Mn Ag, Ca – not fab friendly
ALLIANCE WITH CEA - LETI
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FROM PROTOTYPES TO PRODUCTION
Proven international track record in moving from R&D to production
MEMORY EXPERTISE
Over 10 years of experience in memory technology development
NANOTECHNOLOGY SPECIALIST State of the art industrial tools
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MANUFACTURING ALLIANCES
Over 330 industrial partners
INNOVATION HUB
60+ start-ups in semiconductor, architectures or software
COLLABORATION
Working on 40nm SiOx development since September 2016
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CUSTOMERS
Intel, ST Microelectronics, Globalfoundries
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OPENED FRENCH SUBSIDIARY
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Enhances the cooperation with Leti
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Weebit will be eligible for French R&D
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benefits and tax refunds
BONJOUR FRANCE!
- Base for our French employees
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EXPECTATIONS MET
NOVDEC 2017 40nm working cells
Every committed milestone met
OCT 2017
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ON TRACK to reach 40nm Mbit array by mid-2018
300nm 4Kbit Array with strong Endurance and retention results
MAY 2017 Miniaturisation started MARCH 2017 Electrical results validation
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NOVEMBER 2016 Successful Technology transfer to Leti
SEPT 2016 Development kicked off at Leti
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EXPECTATIONS MET
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40nm working cells Demonstrated one month ahead of schedule!
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2018 PLANS
TECHNICAL
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Develop a 40nm Mbit array by mid-2018
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Improved Endurance and Retention to meet industry standards by end 2018
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Define a plan and be on the path to develop 2xnm technology
BUSINESS
- Sign first cooperation agreement with a key industry player
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DISCLAIMER
This presentation contains certain statements that constitute forward-looking statements. Examples of such statements include, but are not limited to, statements regarding the design, scope, initiation, conduct and results of our research and development programs; our plans and objectives for future operations; and the potential benefits of our products and research technologies. In some cases, forwardlooking statements can be identified by the use of terminology such as “may,” “will,” “expects,” “plans,” “anticipates,” “estimates,” “potential” or “continue” or the negative thereof or other comparable terminology. These statements involve a number of risks and uncertainties that could cause actual results and the timing of events to differ materially from those anticipated by these forward-looking statements. These risks and uncertainties include a variety of factors, some of which are beyond our control. All forward-looking statements and reasons why actual results may differ are based on information available to us when initially made, and we assume no obligation to update these forward-looking statements or reasons why actual results might differ or the information set forth herein. In addition, we do not make any representations or warranties, express or implied, with regard to the information included in this presentation of any other related document or information disclosed or furnished in connection thereto, including, without limitation, with respect to the accuracy, reliability, completeness or its sufficiency for any particular purpose. This information is proprietary and confidential of Weebit and is provided on a confidential basis and may not be disclosed or used without our prior written consent. You acknowledge that the disclosure and use of the information may be further prohibited under applicable securities or other laws. This presentation is made for informational purposes only and does not constitute an offer to sell any interest in Weebit not does it form the basis of any contract or agreement between the parties.
THANK YOU
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