WEEBIT NANO LTD — Investor Presentation 2015

Nov 18, 2015

19 November 2015

ASX Announcement

WEEBIT NANO INVESTOR PRESENTATION AND ROADSHOW INCLUDING PROFESSOR JAMES TOUR

Radar Iron Limited ("Radar", ASX:RAD) wishes to advise that the Directors and Management of Weebit Nano Ltd including Professor James Tour will present the attached Investor Presentation in Australia commencing the 19th November 2015.

In addition Radar confirms that option fee 1 has been paid to Weebit Nano Ltd (AUD\$75,000.00).

All enquiries should be directed to Damon Sweeny, Company Secretary on +61 (08) 9389 5885.

For and on behalf of Radar Iron Limited

Ananda Kathiravelu

Investor Roadshow November 2015

Yossi Keret, CEO

Disclaimer

This presentation contains certain statements that constitute forward - looking statements. Examples of such statements include, but are not limited to, statements regarding the design, scope, initiation, conduct and results of our research and development programs; our plans and objectives for future operations; and the potential benefits of our products and research technologies. In some cases, forward-looking statements can be identified by the use of terminology such as "may," "will," "expects," "plans," "anticipates," "estimates," "potential" or "continue" or the negative thereof or other comparable terminology These statements involve a number of risks and uncertainties that could cause actual results and the timing of events to differ materially from those anticipated by these forward-looking statements. These risks and uncertainties include a variety of factors, some of which are beyond our control. All forward-looking statements and reasons why actual results may differ are based on information available to us when initially made, and we assume no obligation to update these forward-looking statements or reasons why actual results might differ.

Weebit plans to become the paramount solution for the USD\$37B Flash Memory market by 2018

Professor James Tour

• Professor of Materials Science and Nano Engineering and a Professor of Computer Science at Rice University in Houston, Texas
• Well known for his work in molecular electronics and molecular switching molecules
• Holds more than 60 US patents and has over 500 publications Was named among "the 50 most Influential Scientists in the world today" by TheBestSchool.org in 2014
• Was selected as Scientist of the Year by R&D magazine in 2013
• Won the 2012 ACS Nano Lectureship Award that honor the contribution of scientists whose work has significantly impacted the fields of nanoscience and nanotechnology
• Was ranked as one of the top 10 Scientists in the world over the past decade by Reuters in 2009

Market opportunity

• Target market Flash memory replacement
• Overall market USD\$37B and is rapidly growing
• Global emerging memory technology market – around USD\$600M in 2015 and forecasted to grow to USD\$3.6B by 2020
• Customers Everybody (Cloud, Data centers, Smartphones, IoT, Wearable electronics, Automotive, Healthcare…)

Jeong et al., Rep. Prog. Phys. 75 076502 (2012)

Market opportunity

Smartphones and tablets:

The major markets where non-volatile memory is used.

Connectivity:

Cloud Data Centers require ultrafast response time, currently utilizing expensive SSD Flash drives.

Wearable:

Use of wearable electronic devices is expected to grow substantially

Flash market growth engines

Internet of Things (IoT):

Network of physical objects or "things" which enables collection and exchange of data.

Health Care:

Expected to be used more in personal healthcare applications such as pacemakers and heart rate & blood pressure monitors

Automotive:

Navigation, infotainment and safety components which requires high reliability devices.

The Challenge

Flash technology cells physically cannot be scaled down any further without a rapid deterioration in reliability

At the same time, world memory storage use is growing exponentially (doubling every two years) and desperate for a higher performance memory device

A quantum leap that will allow semiconductor memory elements to store data at much higher densities, while also being cheaper, faster, more reliable and more energy efficient than existing Flash technology, and other emerging ReRam technologies.

Peer Comparison – ASX:FRY (4D-S)

• 4D-S memory element named MOHJO™: Metal Oxide Hetero Junction
• The metal material is made of different oxidized metals Pr (Praseodymium), Ca (Calcium) and Mn( Manganese)
• The Pr, Ca and Mn are not used in the semiconductor industry and may have CMOS compatability issues *
• 4D-S On-Off ratio is 4 magnitude (10,000 times) of order lower than Weebit
  • 10^3 Vs 10^7 * Compared to Silicon Oxide, metals fabrication is challenging and may cause severe electromigration and diffusion problems which require complicated diffusion barrier layers.

Peer Comparison – ASX:SOR

• SOR strategic elements nano cube memory cell made from Cerium oxide CeO2 (Ceria)
• Cerium is rare earth mineral which is rarely used in the semiconductor and memory space, and would require costly industry-wide retooling to become widely adopted.
• SOR on-off ratio is 3 magnitude of order (1,000 times) lower than Weebit (10^4 Vs 10^7)

SOR's main focus is inkjet printing technology and transparent electronics research, and is far from any practical memory application

Peer Comparison - Crossbar

• Crossbar's memory element is made from silver one of the most expensive metals in the semiconductor industry
• Weebit uses Silicon Oxidation which is the simplest, most reproducible and cost effective process in the semiconductor industry
• Corssbar on-off ratio is 4 magnitude of order lower than Weebit
• 10^3 Vs 10^7
• As an example, the semiconductor industry previously spent huge resources to migrate from the expensive gold wires to copper wires, in order to reduce cost

Peer Comparison - Viking

• Viking is specializing in DRAM and systems and buys ReRAM from Sony
• Sony ReRAM memory element is made of Copper Tellurium alloy; Tellurium is a rare and expensive element (1-5 parts per Billion in the earth's crust)
• Weebit's use of Silicon oxide is the most effective way to implement the ReRAM manufacturing process
• * There is growing demand for Tellurium in Solar panels, thus it is likely to become even more expensive.

Competitors Analysis

	Memory Type	Memory Element	Weebit Advantage
Crossbar	ReRAM	metallic filament	Weebit SiOx Memory -Lowest cost per bit
ERSPIN	MRAM	Magnetic material	ReRAM memory cell 5x smaller than MRAM - Lowest cost per bit
4 D S	ReRAM	Metal Oxide	Weebit SiOx Memory -Lowest cost per bit
desto	CBRAM	copper ionic transport	Weebit SiOx Memory -Lowest cost per bit
ikina	ReRAM	Copper Tellurium	Weebit SiOx Memory -Lowest cost per bit
avalanchetechnology	MRAM	Magnesium Oxide	Weebit ReRAM cell 5x smaller than MRAM - Lowest cost per bit
DKI	FRAM	Molybdenum Oxide	Weebit ReRAM cell 5x smaller than FRAM - Lowest cost per bit
OVONYX	PCM	Chalcogenide	Weebit SiOx Memory -Lowest cost per bit

Competitors analysis demonstrates that Weebit has the lowest cost per bit, as its uses SiOx material which is the cheapest memory element available.

ReRAM Technology

What is ReRAM

• An emerging non-volatile Memory that changes its resistance across a special dielectric material (the Secret source)
• In order to construct a binary language:
• Set voltage is applied to create low resistance logic "1
• Reset Voltage is applied to create high resistance logic "0"
• Unlike Flash which confines electrons in a small trap the ReRAM principle is based on a material resistance change
• ReRAM can be stacked in 3D array to provide unlimited capacity

ReRAM Technology

ReRAM Advantages:

• Higher density
• Lower voltage
• X1000 faster

• Higher reliability

• Stores more data

• Much cheaper
• Much smaller

	Flash	ReRAM
Scalability	16 nm	<5nm
Voltage	20V	<3V
Speed	$~10\mu s$	$<$ 50 $ns$
Energy/bit	$\neg n$	~0.1 p
Endurance	$10^{2}$	$10^{10}$
Multi-bit	3	>3

Weebit's ReRAM Technology Advantage

Professor Tour developed a breakthrough ReRAM technology transforming Silicon Oxide (SiOx) into a memory element

Made of SiOx

• Fab friendly Silicon is the most studied and produced material in the semiconductor industry
• Cheap Lower manufacturing costs, higher yield
• Scalable SiOx can be easily scaled and packed into a large 3D memory array

Improved performance

• Extremely High On-Off ratio allows multi-bit capability
• Unipolar structure allows higher scalability than ReRAM alternatives
• Energy efficiency- Lower power consumption, increased battery life

"Hard Rad" - Radiation hardness class

Hard-Rad certified after demonstrating 2 years operation in space

Spacecraft Single Event Environments at High Shielding Mass (HiMassSEE)

• Powerful computers are essential to space technology
• However, power is less of an issue than the ability to maintain coherence in hostile space environments
• Coherence and reliability is particularly crucial for satellite circuitry and long term space missions
• Weebit's devices were sent to space and exposed to radioactive solar and cosmic rays radiation for 2 years
• Weebit's memory devices worked without degradation or loss of performance

Go to Market Strategy

Company Brief

• Incorporated in Israel 2014, privately held
• Built around James Tour's revolutionary ReRAM technology
• Licensing of Rice University technology
• Seven patents US and Global
• Funded by founders and private investors

Management Team

Yossi Keret- CEO & Director

Mr. Yossi Keret has extensive management and financial experience and has led a variety of international companies in sectors including industrials, finance, biotech and technology both in Europe and the USA. Mr. Keret's experience includes public companies. Mr Keret has played roles in M&A negotiations and implementation including a major part in Initial Public Offerings (IPO) on NASDAQ and has led large private equity raisings for public companies.

Amir Regev - VP Engineering

Amir brings to Weebit two decades of Device & Technology experience in the semiconductor industry, mainly in Flash memory technology. Prior to Weebit Amir served as a senior Engineer in several leading semiconductor and memory technology companies, including Intel (NASDAQ:INTC), SanDisk (NASDAQ:SNDK), Micron (NASDAQ:MU) and Marvell (NASDAQ:MRVL).

Board Of Directors

Dr. Moti Gross

Moti Gross has extensive experience leading technology companies and developing business strategy for established enterprises and start-ups. Dr. Gross has handled various large technological projects including raising capital in both government and private sectors. Dr. Gross earned his PhD in Economics and Finance at Oxford University. Dr. Gross is also the CEO of Dotz Nano Ltd, a specialised nano-technology company focused on Graphene Quantum Dots.

Rami Hadar

Rami Hadar is the former CEO of Allot Communication (NASDAQ:ALLT). During the eight years he functioned as CEO, Mr. Hadar increased sales to above US\$100 million annually, performed 3 M&A's and led the company to an IPO on NASDAQ. Prior to Allot, Mr. Hadar was the CEO of 2 Israeli companies that executed successful exits for their investors. Mr. Hadar was also one of the founders of Combox and was a director in the company when it was purchased by Terayon. Mr. Hadar is presently a partner in a new venture capital firm Eucalyptus Growth Capital that focuses on investment and assistance to mature Israeli companies.

Dr. Amiram Bornstein

A leading specialist in plastic surgery, Dr.Bornstein is also a highly successful and influential technology investor. Dr. Bornstein brings to the Board of Directors his knowledge and experience in strategic planning and investment markets.

Board Of Advisors

Professor James Tour

• Tour has 550 research publications and over 70 patents
• Named among "the 50 most influential scientists in the world today" by TheBestSchools.org in 2014
• Named "Scientist of the Year" by R&D magazine, 2013
• Ranked one of the top 10 chemists in the world over the past decade, by a Thomson Reuters citations per publication index, 2009
• Feynman prize in experimental nanotechnology in 2008
• NASA space act award in 2008 for his development of carbon nanotube reinforced elastomers

Yongsung Ji, Ph.D.

• Ph.D. From the prestigious GIST and KIST universities in Korea
• Lead device researcher in SiOx ReRam in Prof. Tour's team, Rice University
• Awarded researcher in the electronics and physics domains since 2001

Summary

• Huge growing storage market (USD\$37B) already demanding High Performance storage solutions
• Flash technology is approaching a scalability barrier and cannot meet speed and reliablility performance needs
• ReRAM is the leading emerging memory candidate
• Weebit controls a pioneering technology developed at a top-ranking material science university which outperforms Flash in each parameter
• Weebit's solution is cheaper, more efficient and is easier to commercialize that other ReRAM developers
• IP Strategy shorter time to market
• Management and technology veterans with proven track records

Key Acquisition Terms

• Payment of a AUD\$75k option fee for an exclusive 28 day option to purchase.
• A further AUD\$75k at the completion of due diligence
• Weebit shareholders holding more than 50% of Weebit passing a resolution to approve the Transaction.
• Radar to issue 750,000,000 shares In exchange for 100% of the issued capital in Weebit (subject to ASX escrow provisions).

Conditions Precedent

• Weebit and Radar completing DD in respect of the other within 28 days;
• ASX providing conditional approval for Radar to be re-instated to trading on the ASX;
• Re-compliance with Chapters 1 and 2 of the ASX Listing Rules;
• The parties obtaining all necessary shareholder and regulatory
• Change of Radar's name to Weebit Nano Ltd; and
• Receiving valid, non-revocable applications for at least A\$5,000,000 under the Capital Raising

Pro Forma Capital Structure

Event	Shares	Options
Currently on issue*	321,613,956	55,500,000
Consideration to Weebit shareholders	750,000,000	-
Public Offer	100,000,000	-
Transaction Options	-	50,000,000
TOTAL	1,171,613,956	105,500,000

*assumes issue of all securities approved in General Meeting on 28 October 2015

Indicative Timetable

Event	Date
Due diligence completed and formal documents executed	11 December 2015
Completion of second tranche payment	13 December 2015
Dispatch Notice of Meeting seeking approval for the acquisition of WEEBIT	14 December 2015
Lodgement of prospectus with ASIC	14 January 2016
General Shareholder Meeting to approve the acquisition of WEEBIT	17 January 2016
Closing date of offer under the prospectus	1 February 2016
Dispatch holding statements	10 February 2016
Requotation of shares on ASX	1 March 2016