VPEC — Investor Presentation 2020

Aug 17, 2020

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公司簡介 MOCVD 創造世界級之競爭力

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核心技術

MOCVD （有機金屬氣相沉積法） - Metal Organic Chemical Vapor Deposition

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半導體分類（依使用材料）

Element Si Ge ,

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||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|,|
|Semiconductor|IV-IV|
|SiC,|SiGe|
|III-V|
|GaAs,|InP, GaN, GaP, GaSb...|
|Com|ound|
|p|
|II-VI|
|ZnSe,|ZnS, CdS, etc.|
|Period|Column II|III|IV|V|VI|
|Be|鈹|B|硼|C|碳|N|氮|O|氧|
|2|
|Beryllium|Boron|Carbon|Nitrogen|Oxygen|二元化合物|Binary : GaAs, InP, GaP,GaN, etc.|
|Mg|鎂|Al|鋁|Si|矽|P|磷|S|硫|
|3|Magnesium|Aluminum|Silicon|Phosphorus|Sulfur|三元化合物|Ternary : InGaAs, InGaP, AlGaAs, etc.|
|4|Zn|鋅|Ga|鎵|Ge|鍺|As|砷|Se|硒|四元化合物|Quaternary : AlGaInP, InGaAsP, etc.|
|Zinc|Gallium|Germanium|Arsenic|Selenium|
|Cd|鎘|In|銦|Sn|錫|Sb|銻|Te|碲|五元化合物|Pentanary : AlGaInAsN, etc.|
|5|
|Cadmium|Indium|Tin|Antimony|Tellurium|
|Hg|汞|Tl|鉈|Pb|鉛|
|6|
|Mercury|Thallium|Lead|
|3|

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Semiconductor

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磊晶過程中之化學反應

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化學反應式：

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主要原物料 :

MO Source + Hydride + Carrier Gas： H2

A s H 3[: rs ne] A i PH3 : Phosphine SiH 4 : Silane Si H 2 6 : Disiline H2Se : Hydrogen Selenide CBr 4 : Carbon Tetrabromide

TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga SiH TMIn : Tri-Methyl-Indium ( CH3 )3In Si H 2 DETe : Di-ethyl-Tellurium ( C2H5 )2Te DEZn : Di-ethyl-Zinc ( C2H5 )2Zn CBr CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂

CH Al CH Al 3 3 TMAl Tri - Methyl - Aluminum ( CH3 )3 三 甲基 鋁 CH 4 3

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化合物半導體材料特性

1. High Electron Mobility 高電子移動速率 (5.7x higher than CM0S)

2. High Frequency Response 高頻率響應 3. Wide Band Width 寬幅之頻寬

3. 4 . High Linearity 高線性度

4. 1. High Power 高功率

5. Alternative Choice of Material 材料選擇多元性 7. 抗輻射 適用於無線通訊、光通訊、雷射

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產業供應鏈

Sumitomo, Freiberg, AXT 4~6 ”GaAs Substrate

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GaAs Epi- Wafer 磊晶片

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MOCVD Reactor
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IDM ：Qorvo, Avago, Skyworks

Microelectronics IC Process Wireless Communication Substrate Foundry ： WIN, AWSC, GCS IC Package & Testing

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～ 2016 2020 上半年損益情形

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