VPEC — Investor Presentation 2020

Nov 19, 2020

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Company Profile World-class leading edge with MOCVD

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Core Technolo gy

MOCVD （有機金屬氣相沉積法） - Metal Organic Chemical Vapor Deposition

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Core Technolo gy

Production MOCVD Reactor

Metal Organic Chemical Vapor Deposition

Through the organic metal chemical vapor deposition method, the W ay o t sem con i d uc or t fil m s grown on e su i th b s ra e, an t t d th e ep it ax a i l Produce layer is accurately controlled through the real-time monitoring of the machine to complete the production of epitaxial wafers for 、 different products such as GaAs InP and GaN.

Production Principle

The epitaxial layer is heated by MOCVD in the cavity of the substrate, and an atomic layer is stacked layer by layer to form an epitaxial layer.

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Semiconductor （ by Material ）

Element Si Ge ,

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||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|,|
|Semiconductor|IV-IV|
|SiC,|SiGe|
|III-V|
|GaAs,|InP, GaN, GaP, GaSb...|
|Com|ound|
|p|
|II-VI|
|ZnSe,|ZnS, CdS, etc.|
|Period|Column II|III|IV|V|VI|
|Be|鈹|B|硼|C|碳|N|氮|O|氧|
|2|
|Beryllium|Boron|Carbon|Nitrogen|Oxygen|二元化合物|Binary : GaAs, InP, GaP,GaN, etc.|
|Mg|鎂|Al|鋁|Si|矽|P|磷|S|硫|
|3|Magnesium|Aluminum|Silicon|Phosphorus|Sulfur|三元化合物|Ternary : InGaAs, InGaP, AlGaAs, etc.|
|4|Zn|鋅|Ga|鎵|Ge|鍺|As|砷|Se|硒|四元化合物|Quaternary : AlGaInP, InGaAsP, etc.|
|Zinc|Gallium|Germanium|Arsenic|Selenium|
|Cd|鎘|In|銦|Sn|錫|Sb|銻|Te|碲|五元化合物|Pentanary : AlGaInAsN, etc.|
|5|
|Cadmium|Indium|Tin|Antimony|Tellurium|
|Hg|汞|Tl|鉈|Pb|鉛|
|6|
|Mercury|Thallium|Lead|
|4|

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Semiconductor

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Chemical Reaction During Epitaxy

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化學反應式：

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主要原物料:

MO Source + Hydride + Carrier Gas ： H2

A s H 3[: rs ne] A i PH3 : Phosphine SiH 4 : Silane Si H 2 6 : Disiline H2Se : Hydrogen Selenide CBr 4 : Carbon Tetrabromide

TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga SiH TMIn : Tri-Methyl-Indium ( CH3 )3In Si H 2 DETe : Di-ethyl-Tellurium ( C2H5 )2Te DEZn : Di-ethyl-Zinc ( C2H5 )2Zn CBr CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂

CH Al CH Al 3 3 TMAl Tri - Methyl - Aluminum ( CH3 )3 三 甲基 鋁 CH 5 3

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Advantages of Compoundsemiconductor

1. High Electron Mobility 高電子移動速率 (5.7x higher than CM0S)

2. High Frequency Response 高頻率響應

3. Wide Band Width 寬幅之頻寬 4 . High Linearity 高線性度

4. High Power 高功率

5. Alternative Choice of Material 材料選擇多元性 7. 抗輻射 適用於無線通訊、光通訊、雷射

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GaAs in Wireless Communication Supply Chain

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IDM ： Qorvo, Avago, Skyworks

Sumitomo, Freiberg, AXT 4~6 ”GaAs Substrate

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GaAs Epi- Wafer 磊晶片

Microelectronics IC Process

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Wireless Communication Substrate

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MOCVD Reactor

Foundry ： WIN, AWSC, GCS IC Package & Testing

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2016-2020 Q3 Financial Result

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2021 Outlook

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5G mobile phone penetration rate WiFi6 & WiFi6E IoT Smart Link
Microelectronics
Automotive PA 5G millimeter wave base station PA Defense industry Low-orbit satellite LNA
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2021 Outlook

3D Sensing

5G Base station infrastructure

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Optoelectronics
LiDAR for vehicles 智慧機器視覺
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