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VPEC Investor Presentation 2020

Nov 19, 2020

52095_rns_2020-11-19_b41f1d7e-4ec2-4a09-8dba-dd1a2a7b2f26.pdf

Investor Presentation

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第三代半導體材料趨勢及展望 全新光電科技股份有限公司 World-class leading edge with MOCVD

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大 綱

  • 壹、公司現況

  • 貳、核心技術

  • 參、 VPEC 技術與機會

  • 肆、氮化鎵市場與技術

  • 伍、 2021 年展望

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VPEC Proprietary and Confidential

大 綱

  • 壹、公司現況

貳、核心技術

參、 VPEC 技術與機會

  • 肆、氮化鎵市場與技術

  • 伍、 2021 年展望

3

VPEC Proprietary and Confidential

公司現況

  • 公司成立 1996.11

  • 廠區位址 桃園市平鎮工業區

  • 廠區面積 A 10,000 平方公尺

  • B棟 6 , 600平方公尺

  • 資本額 新台幣 18.5 億元

  • 員工人數 254 人( R&D 10%

  • 海外辦公室 LA, USA

  • 產品 2” 6” 磊晶片

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大 綱

壹、公司現況

  • 貳、核心技術

參、 VPEC 技術與機會

肆、氮化鎵市場與技術

伍、 2021 年展望

5

VPEC Proprietary and Confidential

心 核 技術

生產 MOCVD 有機金屬化學氣相沉積法 機台 Metal Organic Chemical Vapor Deposition

透過有機金屬化學氣相沉積法,在基板上生 生產 長半導體薄膜的方式,同時透過機台即時監 、 方式 控,精確控制磊晶層,完成砷化鎵 磷化銦 等不同產品磊晶片生產。

生產 原理

磊晶層是由 MOCVD 在腔體中加熱基板,一個 原子層,層層堆疊,行成磊晶層。

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VPEC Proprietary and Confidential

大 綱

壹、公司現況

貳、核心技術

  • 參、 VPEC 技術與機會

肆、氮化鎵市場與技術

伍、 2021 年展望

7

VPEC Proprietary and Confidential

Leadershi in E i Technolo p p gy

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GaN/Si, GaN/SiC
(base station/small cell)
InP PHEMT
(mobile)
4” ~ 6” 4” ~ 6”
4” InP HBT BiHEMT/BiFET BiHEMT/BiFET
4” pHEMT 4” pHEMT 6” pHEMT 6” PHEMT
4” GaAs HBT 4” GaAs HBT 6” GaAs HBT 6” GaAs HBT
2G/GSM 3G 4G What’s Next: 5G
8
nics
o
Microelectr
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VPEC Proprietary and Confidential

VPEC is Read for Next Trend y

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VPEC Proprietary and Confidential

大 綱

壹、公司現況

貳、核心技術

參、 VPEC 技術與機會

肆、氮化鎵市場與技術

伍、 2021 年展望

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VPEC Proprietary and Confidential

三 第 代半導體的優勢

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Ref.兩岸第三代半導體供應鏈整合與崛起: 新科顧問 (2020)

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VPEC Proprietary and Confidential

GaN Technolo gy

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LDMOS的市場份額逐步下降,GaN射頻元件將佔據射頻前端主體。由於LDMOS無 法支援更高的頻率,預計未來大部分巨集網路單元應用將採用GaN器件。在毫米 波的應用上,GaN也具有較大優勢,在實現相同覆蓋面積和用戶定位功能下,可 以減少收發通道數,同時減小PA原件的尺寸。

Ref. 射頻PA革新不止,萬物互聯廣褒無限: 華西證券(2020)

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VPEC Proprietary and Confidential

GaN Technolo gy

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Ref.兩岸第三代半導體供應鏈整合與崛起: 新科顧問 (2020)

耐高電壓應用:SiC優勢 高頻率/高電流密度:GaN優勢

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VPEC Proprietary and Confidential

GaN 主要應用市場

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Ref.兩岸第三代半導體供應鏈整合與崛起: 新科顧問 (2020)

微波射頻市場:取其GaN在高頻率的優異表現。

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VPEC Proprietary and Confidential

GaN 磊晶技術

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微波射頻市場(基站):

Ref.兩岸第三代半導體供應鏈整合與崛起: 新科顧問 (2020)

  • 2GHz以上: GaN/SiC目前為產品主流。(4~6吋晶圓)

  • 2GHz以下: GaN/Si則具有成本優勢 (6吋晶圓)

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VPEC Proprietary and Confidential

GaN 帶來新的優化方案

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Ref.兩岸第三代半導體供應鏈整合與崛起: 新科顧問 (2020)

微波射頻市場:較LDMOS(Si-based)工作頻率提高兩倍以上。

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VPEC Proprietary and Confidential

: RF-GaN 第 代半導體 市場規模

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年複合成長率:12%,主要成長為基站和國防工業 17

Ref. GaN RF market: applications, players, technology, and substrates, Yole Développement(2020)

VPEC Proprietary and Confidential

壹、公司現況

貳、核心技術

參、 VPEC 技術與機會

  • 肆、氮化鎵市場與技術

  • 伍、 2021 年展望

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VPEC Proprietary and Confidential

2021年展望

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5G 手機滲透率 WiFi6 & WiFi6E
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IoT Smart Link
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微電子
產品
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車聯網 PA 5G 毫米波基站 國防工業 低軌道 LEO 衛星
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VPEC Proprietary and Confidential
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2021年展望

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3D Sensing
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5G 基站基礎建設

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光電子
車用光達 LiDAR 產品 智慧機器視覺
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VPEC Proprietary and Confidential