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VPEC — Investor Presentation 2020
Nov 26, 2020
52095_rns_2020-11-26_f4ee1147-93f6-4158-973e-53ed291b450d.pdf
Investor Presentation
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第三代半導體材料趨勢及展望 全新光電科技股份有限公司 World-class leading edge with MOCVD
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大 綱
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壹、公司現況
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貳、核心技術
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參、 VPEC 技術與機會
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肆、氮化鎵市場與技術
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伍、 2021 年展望
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VPEC Proprietary and Confidential
大 綱
- 壹、公司現況
� 貳、核心技術
� 參、 VPEC 技術與機會
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肆、氮化鎵市場與技術
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� 伍、 2021 年展望
3
VPEC Proprietary and Confidential
公司現況
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公司成立 1996.11
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廠區位址 桃園市平鎮工業區
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廠區面積 A 棟 10,000 平方公尺
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B棟 6 , 600平方公尺
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� 資本額 新台幣 18.5 億元
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員工人數 254 人( R&D > 10% )
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海外辦公室 LA, USA
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~
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� 產品 2” 6” 磊晶片
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大 綱
� 壹、公司現況
- 貳、核心技術
� 參、 VPEC 技術與機會
� 肆、氮化鎵市場與技術
� 伍、 2021 年展望
5
VPEC Proprietary and Confidential
心 核 技術
生產 MOCVD 有機金屬化學氣相沉積法 機台 Metal Organic Chemical Vapor Deposition
透過有機金屬化學氣相沉積法,在基板上生 生產 長半導體薄膜的方式,同時透過機台即時監 、 方式 控,精確控制磊晶層,完成砷化鎵 磷化銦 等不同產品磊晶片生產。
生產 原理
磊晶層是由 MOCVD 在腔體中加熱基板,一個 原子層,層層堆疊,行成磊晶層。
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VPEC Proprietary and Confidential
大 綱
� 壹、公司現況
� 貳、核心技術
- 參、 VPEC 技術與機會
� 肆、氮化鎵市場與技術
� 伍、 2021 年展望
7
VPEC Proprietary and Confidential
Leadershi in E i Technolo p p gy
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GaN/Si, GaN/SiC
(base station/small cell)
InP PHEMT
(mobile)
4” ~ 6” 4” ~ 6”
4” InP HBT BiHEMT/BiFET BiHEMT/BiFET
4” pHEMT 4” pHEMT 6” pHEMT 6” PHEMT
4” GaAs HBT 4” GaAs HBT 6” GaAs HBT 6” GaAs HBT
2G/GSM 3G 4G What’s Next: 5G
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nics
o
Microelectr
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VPEC Proprietary and Confidential
VPEC is Read for Next Trend y
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VPEC Proprietary and Confidential
大 綱
� 壹、公司現況
� 貳、核心技術
� 參、 VPEC 技術與機會
� 肆、氮化鎵市場與技術
� 伍、 2021 年展望
10
VPEC Proprietary and Confidential
三 第 代半導體的優勢
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Ref.兩岸第三代半導體供應鏈整合與崛起: 新科顧問 (2020)
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VPEC Proprietary and Confidential
GaN Technolo gy
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LDMOS的市場份額逐步下降,GaN射頻元件將佔據射頻前端主體。由於LDMOS無 法支援更高的頻率,預計未來大部分巨集網路單元應用將採用GaN器件。在毫米 波的應用上,GaN也具有較大優勢,在實現相同覆蓋面積和用戶定位功能下,可 以減少收發通道數,同時減小PA原件的尺寸。
Ref. 射頻PA革新不止,萬物互聯廣褒無限: 華西證券(2020)
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VPEC Proprietary and Confidential
GaN Technolo gy
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Ref.兩岸第三代半導體供應鏈整合與崛起: 新科顧問 (2020)
耐高電壓應用:SiC優勢 高頻率/高電流密度:GaN優勢
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VPEC Proprietary and Confidential
GaN 主要應用市場
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Ref.兩岸第三代半導體供應鏈整合與崛起: 新科顧問 (2020)
微波射頻市場:取其GaN在高頻率的優異表現。
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VPEC Proprietary and Confidential
GaN 磊晶技術
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微波射頻市場(基站):
Ref.兩岸第三代半導體供應鏈整合與崛起: 新科顧問 (2020)
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2GHz以上: GaN/SiC目前為產品主流。(4~6吋晶圓)
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。
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2GHz以下: GaN/Si則具有成本優勢 (6吋晶圓)
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VPEC Proprietary and Confidential
GaN 帶來新的優化方案
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Ref.兩岸第三代半導體供應鏈整合與崛起: 新科顧問 (2020)
微波射頻市場:較LDMOS(Si-based)工作頻率提高兩倍以上。
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VPEC Proprietary and Confidential
三 : RF-GaN 第 代半導體 市場規模
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年複合成長率:12%,主要成長為基站和國防工業 17
Ref. GaN RF market: applications, players, technology, and substrates, Yole Développement(2020)
VPEC Proprietary and Confidential
大
綱
� 壹、公司現況
� 貳、核心技術
� 參、 VPEC 技術與機會
-
肆、氮化鎵市場與技術
-
伍、 2021 年展望
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VPEC Proprietary and Confidential
2021年展望
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5G 手機滲透率 WiFi6 & WiFi6E
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IoT Smart Link
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微電子
產品
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車聯網 PA 5G 毫米波基站 國防工業 低軌道 LEO 衛星
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VPEC Proprietary and Confidential
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2021年展望
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3D Sensing
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5G 基站基礎建設
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光電子
車用光達 LiDAR 產品 智慧機器視覺
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VPEC Proprietary and Confidential