AI assistant
VPEC — Interim / Quarterly Report 2015
Jan 5, 2016
52095_rns_2016-01-05_b966a3c6-c250-42c6-ac14-d5589cd81526.pdf
Interim / Quarterly Report
Open in viewerOpens in your device viewer
==> picture [635 x 32] intentionally omitted <==
==> picture [635 x 32] intentionally omitted <==
==> picture [635 x 32] intentionally omitted <==
==> picture [635 x 31] intentionally omitted <==
公司簡介 以 MOCVD 創造世界級之競爭力
==> picture [143 x 146] intentionally omitted <==
1
核心技術
==> picture [65 x 74] intentionally omitted <==
MOCVD( 有機金屬氣相沉積法 )
- Metal Organic Chemical Vapor Deposition
==> picture [461 x 69] intentionally omitted <==
==> picture [461 x 193] intentionally omitted <==
2
半導體分類 依使用材料 ( )
==> picture [65 x 74] intentionally omitted <==
Element Si Ge ,
==> picture [700 x 372] intentionally omitted <==
----- Start of picture text -----
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|,|
|Semiconductor|IV-IV|
|SiC,|SiGe|
|III-V|
|GaAs,|InP, GaN, GaP, GaSb...|
|Com|ound|
|p|
|II-VI|
|ZnSe,|ZnS, CdS, etc.|
|Period|Column II|III|IV|V|VI|
|Be|鈹|B|硼|C|碳|N|氮|O|氧|
|2|
|Beryllium|Boron|Carbon|Nitrogen|Oxygen|二元化合物|Binary : GaAs, InP, GaP,GaN, etc.|
|Mg|鎂|Al|鋁|Si|矽|P|磷|S|硫|
|3|Magnesium|Aluminum|Silicon|Phosphorus|Sulfur|三元化合物|Ternary : InGaAs, InGaP, AlGaAs, etc.|
|4|Zn|鋅|Ga|鎵|Ge|鍺|As|砷|Se|硒|四元化合物|Quaternary : AlGaInP, InGaAsP, etc.|
|Zinc|Gallium|Germanium|Arsenic|Selenium|
|Cd|鎘|In|銦|Sn|錫|Sb|銻|Te|碲|五元化合物|Pentanary : AlGaInAsN, etc.|
|5|
|Cadmium|Indium|Tin|Antimony|Tellurium|
|Hg|汞|Tl|鉈|Pb|鉛|
|6|
|Mercury|Thallium|Lead|
|3|
----- End of picture text -----
Semiconductor
3
磊晶過程中之化學反應
==> picture [274 x 97] intentionally omitted <==
化學反應式:
==> picture [69 x 61] intentionally omitted <==
主要原物料:
==> picture [65 x 74] intentionally omitted <==
MO Source + Hydride + Carrier Gas: H2
A s H 3[: rs ne] A i PH3 : Phosphine SiH 4 : Silane Si H 2 6 : Disiline H2Se : Hydrogen Selenide CBr 4 : Carbon Tetrabromide
TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga SiH TMIn : Tri-Methyl-Indium ( CH3 )3In Si H 2 DETe : Di-ethyl-Tellurium ( C2H5 )2Te DEZn : Di-ethyl-Zinc ( C2H5 )2Zn CBr CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂
CH Al CH Al 3 3 TMAl Tri - Methyl - Aluminum ( CH3 )3 三 甲基 鋁 CH 4 3
化合物半導體材料特性
==> picture [65 x 74] intentionally omitted <==
- High Electron Mobility高電子移動速率 2. High Frequency Response高頻率響應 3. Wide Band Width 寬幅之頻寬 4. High Linearity高線性度 5. High Power高功率 6. Alternative Choice of Material材料選擇多元性 7. 抗輻射 適用於無線通訊、光纖通訊、光顯示(LED)& 太 陽能產業
5
產業供應鏈
==> picture [65 x 74] intentionally omitted <==
、 Freiberg AXT
4~6 ”GaAs Substrate
Microelectronics IC Process
==> picture [80 x 32] intentionally omitted <==
GaAs Epi- Wafer 磊晶片
==> picture [130 x 48] intentionally omitted <==
==> picture [125 x 45] intentionally omitted <==
==> picture [125 x 52] intentionally omitted <==
==> picture [130 x 59] intentionally omitted <==
==> picture [151 x 113] intentionally omitted <==
==> picture [209 x 44] intentionally omitted <==
==> picture [111 x 57] intentionally omitted <==
----- Start of picture text -----
Substrate
----- End of picture text -----
MOCVD Reactor
==> picture [145 x 153] intentionally omitted <==
Wireless Communication
==> picture [97 x 84] intentionally omitted <==
IC Package & Testing
6
營運成果 2012-2015 Q1-Q3
==> picture [65 x 74] intentionally omitted <==
| 2015Q1-Q3 | 2015Q1-Q3 | % | 2014 | % | 2013 | % | 2012 | % |
|---|---|---|---|---|---|---|---|---|
| Revenue | 1,764,748 | 100.00% | 2,073,370 | 100.00% | 2,150,393 | 100.00% | 2,248,522 | 100.00% |
| Gross margin | 666,503 | 37.77% | 720,975 | 34.77% | 704,050 | 32.74% | 758,214 | 33.72% |
| OperatingProfit | 506,718 | 28.71% | 524,484 | 25.30% | 520,833 | 24.22% | 568,505 | 25.28% |
| Financial Income | 44,950 | 2.55% | 40,133 | 1.94% | 31,933 | 1.48% | -8,892 | -0.40% |
| Tax | -75,405 | -4.27% | -96,209 | -4.64% | -92,054 | -4.28% | -98,084 | -4.36% |
| Net income | 476,263 | 26.99% | 468,411 | 22.59% | 460,712 | 21.42% | 461,529 | 20.53% |
7