Skip to main content

AI assistant

Sign in to chat with this filing

The assistant answers questions, extracts KPIs, and summarises risk factors directly from the filing text.

VPEC Annual Report 2015

May 3, 2016

52095_rns_2016-05-03_bb1cae15-3f35-4108-914a-11f0c0737448.pdf

Annual Report

Open in viewer

Opens in your device viewer

==> picture [635 x 32] intentionally omitted <==

==> picture [635 x 32] intentionally omitted <==

==> picture [635 x 32] intentionally omitted <==

==> picture [635 x 31] intentionally omitted <==

Company Profile World-class leading edge with MOCVD

==> picture [143 x 146] intentionally omitted <==

1

Core Technology

==> picture [65 x 74] intentionally omitted <==

MOCVD( 有機金屬氣相沉積法 )

  • Metal Organic Chemical Vapor Deposition

==> picture [461 x 69] intentionally omitted <==

==> picture [461 x 193] intentionally omitted <==

2

Semiconductor(by Material)

==> picture [65 x 74] intentionally omitted <==

Element Si Ge ,

==> picture [700 x 372] intentionally omitted <==

----- Start of picture text -----

||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|,|
|Semiconductor|IV-IV|
|SiC,|SiGe|
|III-V|
|GaAs,|InP, GaN, GaP, GaSb...|
|Com|ound|
|p|
|II-VI|
|ZnSe,|ZnS, CdS, etc.|
|Period|Column II|III|IV|V|VI|
|Be|鈹|B|硼|C|碳|N|氮|O|氧|
|2|
|Beryllium|Boron|Carbon|Nitrogen|Oxygen|二元化合物|Binary : GaAs, InP, GaP,GaN, etc.|
|Mg|鎂|Al|鋁|Si|矽|P|磷|S|硫|
|3|Magnesium|Aluminum|Silicon|Phosphorus|Sulfur|三元化合物|Ternary : InGaAs, InGaP, AlGaAs, etc.|
|4|Zn|鋅|Ga|鎵|Ge|鍺|As|砷|Se|硒|四元化合物|Quaternary : AlGaInP, InGaAsP, etc.|
|Zinc|Gallium|Germanium|Arsenic|Selenium|
|Cd|鎘|In|銦|Sn|錫|Sb|銻|Te|碲|五元化合物|Pentanary : AlGaInAsN, etc.|
|5|
|Cadmium|Indium|Tin|Antimony|Tellurium|
|Hg|汞|Tl|鉈|Pb|鉛|
|6|
|Mercury|Thallium|Lead|
|3|

----- End of picture text -----

Semiconductor

3

Chemical Reaction During Epitaxy

==> picture [274 x 97] intentionally omitted <==

化學反應式:

==> picture [69 x 61] intentionally omitted <==

主要原物料:

MO Source + Hydride + Carrier Gas: H2

A s H 3[: rs ne] A i PH3 : Phosphine SiH 4 : Silane Si H 2 6 : Disiline H2Se : Hydrogen Selenide CBr 4 : Carbon Tetrabromide

TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga SiH TMIn : Tri-Methyl-Indium ( CH3 )3In Si H 2 DETe : Di-ethyl-Tellurium ( C2H5 )2Te DEZn : Di-ethyl-Zinc ( C2H5 )2Zn CBr CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂

CH Al CH Al 3 3 TMAl Tri - Methyl - Aluminum ( CH3 )3 三 甲基 鋁 CH 4 3

Advantages of Compoundsemiconductor

  1. High Electron Mobility高電子移動速率(5.7x higher than CM0S)

  2. High Frequency Response高頻率響應 3. Wide Band Width 寬幅之頻寬 4 . High Linearity高線性度 5. High Power高功率

  3. Alternative Choice of Material材料選擇多元性 7. 抗輻射 適用於無線通訊、光纖通訊、光顯示(LED)& 太陽能產 業

5

GaAs in Wireless Communication S ~~upply Chain~~

Sumitomo, Freiberg, AXT

4~6 ”GaAs Substrate GaAs Epi- Wafer 磊晶片

==> picture [125 x 45] intentionally omitted <==

==> picture [125 x 52] intentionally omitted <==

==> picture [151 x 113] intentionally omitted <==

==> picture [144 x 44] intentionally omitted <==

==> picture [156 x 16] intentionally omitted <==

----- Start of picture text -----

MOCVD Reactor
----- End of picture text -----

IDM :Skyworks, RFMD, TriQuint, Avago, Anadigics

Microelectronics IC Process Wireless Communication Substrate Foundry: WIN, AWSC, GCS IC Package & Testing

6

2012-2015 Financial Result

==> picture [65 x 74] intentionally omitted <==

2015 2015 % 2014 % 2013 % 2012 %
Revenue 2,391,899 100.00% 2,073,370 100.00% 2,150,393 100.00% 2,248,522 100.00%
Gross margin 896,369 37.48% 720,975 34.77% 704,050 32.74% 758,214 33.72%
OperatingProfit 670,700 28.04% 524,484 25.30% 520,833 24.22% 568,505 25.28%
Financial Income 20,258 0.85% 40,133 1.94% 31,933 1.48% -8,892 -0.40%
Tax -98,301 -4.11% -96,209 -4.64% -92,054 -4.28% -98,084 -4.36%
Net income 592,657 24.78% 468,411 22.59% 460,712 21.42% 461,529 20.53%

7