AI assistant
VPEC — Investor Presentation 2023
Nov 7, 2023
52095_rns_2023-11-07_21e1f8ff-73f1-4c43-9c09-5c58861b2ed9.pdf
Investor Presentation
Open in viewerOpens in your device viewer
==> picture [633 x 124] intentionally omitted <==
公司簡介 MOCVD 創造世界級之競爭力
==> picture [142 x 146] intentionally omitted <==
1
==> picture [77 x 78] intentionally omitted <==
心 核 技術
MOCVD (有機金屬氣相沉積法)
- Metal Organic Chemical Vapor Deposition
==> picture [460 x 261] intentionally omitted <==
2
==> picture [77 x 78] intentionally omitted <==
生產
機台
生產
方式
生產
原理
核心技術
MOCVD 有機金屬化學氣相沉積法 Metal Organic Chemical Vapor Deposition
透過有機金屬化學氣相沉積法,在基板上生
長半導體薄膜的方式,同時透過機台即時監
、、
控,精確控制磊晶層,完成砷化鎵磷化銦
氮化鎵等不同產品磊晶片生產。
磊晶層是由 MOCVD 在腔體中加熱基板,一 個原子層,層層堆疊,行成磊晶層。
3
==> picture [77 x 78] intentionally omitted <==
半導體分類 ( 依使用材料 )
Element Si Ge ,
Semiconductor
IV-IV SiC, SiGe III-V GaAs, InP, GaN, GaP, GaSb...
==> picture [699 x 309] intentionally omitted <==
----- Start of picture text -----
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|III-V|
|GaAs,|InP, GaN, GaP, GaSb...|
|Compound|
|II-VI|
|ZnSe,|ZnS, CdS, etc.|
|Period|Column II|III|IV|V|VI|
|Be|鈹|B|硼|C|碳|N|氮|O|氧|
|2|
|Beryllium|Boron|Carbon|Nitrogen|Oxygen|二元化合物|Binary : GaAs, InP, GaP,GaN, etc.|
|Mg|鎂|Al|鋁|Si|矽|P|磷|S|硫|
|3|Magnesium|Aluminum|Silicon|Phosphorus|Sulfur|三元化合物|Ternary : InGaAs, InGaP, AlGaAs, etc.|
|4|Zn|鋅|Ga|鎵|Ge|鍺|As|砷|Se|硒|四元化合物|Quaternary : AlGaInP, InGaAsP, etc.|
|Zinc|Gallium|Germanium|Arsenic|Selenium|
|Cd|鎘|In|銦|Sn|錫|Sb|銻|Te|碲|五元化合物|Pentanary : AlGaInAsN, etc.|
|5|
|Cadmium|Indium|Tin|Antimony|Tellurium|
|Hg|汞|Tl|鉈|Pb|鉛|
|6|
|Mercury|Thallium|Lead|
|4|
----- End of picture text -----
4
==> picture [77 x 78] intentionally omitted <==
磊晶過程中之化學反應
==> picture [274 x 97] intentionally omitted <==
化學反應式:
==> picture [76 x 67] intentionally omitted <==
==> picture [17 x 64] intentionally omitted <==
主要原物料 :
MO Source + Hydride + Carrier Gas : H2
==> picture [60 x 43] intentionally omitted <==
==> picture [13 x 36] intentionally omitted <==
AsH3 : Arsine PH3 : Phosphine SiH 4 : Silane Si H 2 6 : Disiline H2Se : Hydrogen Selenide CBr 4 : Carbon Tetrabromide
TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga SiH TMIn : Tri-Methyl-Indium ( CH3 )3In Si H 2 DETe : Di-ethyl-Tellurium ( C2H5 )2Te DEZn : Di-ethyl-Zinc ( C2H5 )2Zn CBr CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂
CH Al CH Al 3 3 TMAl Tri - Methyl - Aluminum ( CH3 )3 三 甲基 鋁 CH 3
5
==> picture [77 x 78] intentionally omitted <==
化合物半導體材料特性
-
High Electron Mobility
高電子移動速率(5.7x higher than CM0S) -
High Frequency Response
高頻率響應 -
Wide Band Width
寬幅之頻寬 -
High Linearity
高線性度 -
High Power
高功率 -
Alternative Choice of Material
材料選擇多元性 -
抗輻射
- 、 、 、 適用於 微電子產品 HBT pHEMT BiHEMT GaN on XX - 、 、 、 光電子產品 PIN ( PD APD )、 VCSEL LD SC
6
==> picture [77 x 78] intentionally omitted <==
微電子產品產業供應鏈
==> picture [115 x 163] intentionally omitted <==
IDM : Qorvo, Skyworks Fabless : Avago, Qualcomm, Richwave,
Sumitomo, Freiberg, AXT
2~6 ”GaAs Substrate
GaAs Epi- Wafer Microelectronics 磊晶片 IC Process Substrate VPEC is a Pure Foundry : MOCVD Reactor Epi Provider
Wireless Communication
==> picture [97 x 83] intentionally omitted <==
WIN, AWSC
IC Package & Testing
7
==> picture [77 x 78] intentionally omitted <==
2020 -2023 年 年前三季損益情形
==> picture [694 x 311] intentionally omitted <==
8
==> picture [77 x 78] intentionally omitted <==
微電子產品未來展望
==> picture [360 x 17] intentionally omitted <==
----- Start of picture text -----
5G Mobile Penetration WiFi6/6E and WiFi7
----- End of picture text -----
IoT Smart Link
==> picture [205 x 116] intentionally omitted <==
==> picture [216 x 119] intentionally omitted <==
==> picture [228 x 116] intentionally omitted <==
Micro Electron ics LEO Satellite 5G Base Station Military
==> picture [48 x 11] intentionally omitted <==
----- Start of picture text -----
V2X PA
----- End of picture text -----
==> picture [113 x 218] intentionally omitted <==
==> picture [170 x 114] intentionally omitted <==
==> picture [179 x 110] intentionally omitted <==
==> picture [161 x 110] intentionally omitted <==
9
==> picture [77 x 78] intentionally omitted <==
光電子產品未來展望
AR / VR Sensing (VCSEL/PD)
==> picture [259 x 139] intentionally omitted <==
Data Center Communication 3D-Sensing & Tof (PD/VCSEL)
==> picture [206 x 114] intentionally omitted <==
Car LiDAR (LD/PD)
==> picture [210 x 128] intentionally omitted <==
短期
中期
長期
10
==> picture [77 x 78] intentionally omitted <==
AR / VR
~~Detector: PD~~
Wireless
LiDAR Turnkey Solution
~~Detector: GaAs PIN, APD~~
V2X
VPEC Proprietary and Confidential
==> picture [221 x 139] intentionally omitted <==
==> picture [223 x 139] intentionally omitted <==
THE ~~WALL STREET JOURNAL~~
11