VPEC — Investor Presentation 2022

May 13, 2022

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Company Profile

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Core Technolo gy

MOCVD （有機金屬氣相沉積法）

• Metal Organic Chemical Vapor Deposition

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Production Reactor

Way to Produce

Production Principle

Core Technolo gy

MOCVD Metal Organic Chemical Vapor Deposition

Through the organic metal chemical vapor deposition method, the semiconductor film is grown on the substrate, and the epitaxial layer is accurately controlled through the real-time monitoring of the machine to complete the production of epitaxial wafers for 、 different products such as GaAs InP and GaN.

The epitaxial layer is heated by MOCVD in the cavity of the substrate, and an atomic layer is stacked layer by layer to form an epitaxial layer.

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Element Si Ge ,

Semiconductor

Compound

IV-IV

III-V

SiC, SiGe

GaAs, InP, GaN, GaP, GaSb...

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||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|II-VI|
|ZnSe,|ZnS, CdS, etc.|
|P erio d|C o lu m n II|III|IV|V|V I|
|B e|鈹|B|硼|C|碳|N|氮|O|氧|
|2|
|B e r|y lliu m|B o ro n|C a rb o n|N itro g|e n|O x y|g|e n|二元化合物|Binary : GaAs, InP, GaP,GaN, etc.|
|M|g|鎂|A l|鋁|S i|矽|P|磷|S|硫|
|3|M|a g ne s iu m|A lu m in u m|S ilic o n|P ho s|p ho rus|S u lfu r|三元化合物|Ternary : InGaAs, InGaP, AlGaAs, etc.|
|4|Z n|鋅|G a|鎵|G e|鍺|A s|砷|S e|硒|四元化合物|Quaternary : AlGaInP, InGaAsP, etc.|
|Z inc|G a lliu m|G e rm a n iu m|A rse n ic|S e le n iu m|
|C d|鎘|In|銦|S n|錫|S b|銻|Te|碲|五元化合物|Pentanary : AlGaInAsN, etc.|
|5|
|C a d m iu m|Ind iu m|T in|A ntim o n y|Te lluriu m|
|H g|汞|T l|鉈|P b|鉛|
|6|
|M|e rc u r|y|T ha lliu m|L e a d|
|4|

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Chemical Reaction During Epitaxy

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化學反應式：

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主要原物料 :

MO Source + Hydride + Carrier Gas ： H2

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AsH : Arsine 3 PH3 : Phosphine SiH : Silane 4 Si H : Disiline 2 6 H2Se : Hydrogen Selenide CBr : Carbon Tetrabromide 4

TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga TMIn : Tri-Methyl-Indium ( CH3 )3In DETe : Di-ethyl-Tellurium ( C2H5 )2Te

DEZn : Di-ethyl-Zinc ( C2H5 )2Zn

CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂

CH Al CH TMAl Tri - Methyl - Aluminum ( CH3 )3Al 3 3

三 甲基 鋁 CH 3

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Advantages of Compoundsemiconductor

1. High Electron Mobility 高電子移動速率 (5.7x higher than CM0S)

2. High Frequency Response 高頻率響應

3. Wide Band Width 寬幅之頻寬

4. High Linearity 高線性度

5. High Power 高功率

6. Alternative Choice of Material 材料選擇多元性

7. 抗輻射

適用於無線通訊、光通訊、雷射

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GaAs in Wireless Communication Supply Chain

Sumitomo, Freiberg, AXT

2~6 ”GaAs Substrate

IDM ： Qorvo, Avago, Skyworks

GaAs Epi- Wafer Microelectronics 磊晶片 IC Process Wireless Communication Substrate Foundry ： MOCVD Reactor WIN, AWSC, GCS IC Package & Testing

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2019-2022Q1 Financial Result

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2022 Outlook-Microelectronics

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5G Mobile Penetration
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WiFi6 / 6E Micro Electron ics

IoT Smart Link

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V2X PA LEO Satellite 5G Base Station Military
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2022 Outlook-Optoelectronics

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Car LiDAR
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AR / VR Sensing
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Opto
electron
ics
Robot Vacuum Sense Special Heat/IR Imaging
CCD SWIR
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AR / VR

~~Detector: PD~~

Wireless

LiDAR Turnkey Solution

~~Detector: PD, APD~~

V2X

VPEC Proprietary and Confidential

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THE ~~WALL STREET JOURNAL~~

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