VPEC — Investor Presentation 2019

Aug 26, 2019

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公司簡介

MOCVD 創造世界級之競爭力

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核心技術

MOCVD( 有機金屬氣相沉積法 )

• Metal Organic Chemical Vapor Deposition

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半導體分類(依使用材料)

Element Si Ge , IV-IV SiC, SiGe

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,
Semiconductor	IV-IV
SiC,	SiGe
III-V
GaAs,	InP, GaN, GaP, GaSb...
Com	ound
p
II-VI
ZnSe,	ZnS, CdS, etc.
Period	Column II	III	IV	V	VI
Be	鈹	B	硼	C	碳	N	氮	O	氧
2
Beryllium	Boron	Carbon	Nitrogen	Oxygen	二元化合物	Binary : GaAs, InP, GaP,GaN, etc.
Mg	鎂	Al	鋁	Si	矽	P	磷	S	硫
3	Magnesium	Aluminum	Silicon	Phosphorus	Sulfur	三元化合物	Ternary : InGaAs, InGaP, AlGaAs, etc.
4	Zn	鋅	Ga	鎵	Ge	鍺	As	砷	Se	硒	四元化合物	Quaternary : AlGaInP, InGaAsP, etc.
Zinc	Gallium	Germanium	Arsenic	Selenium
Cd	鎘	In	銦	Sn	錫	Sb	銻	Te	碲	五元化合物	Pentanary : AlGaInAsN, etc.
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Cadmium	Indium	Tin	Antimony	Tellurium
Hg	汞	Tl	鉈	Pb	鉛
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Mercury	Thallium	Lead
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Semiconductor

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磊晶過程中之化學反應

化學反應式：

主要原物料 :

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MO Source + Hydride + Carrier Gas ： H2

A s H 3[: rs ne] A i PH3 : Phosphine SiH 4 : Silane Si H 2 6 : Disiline H2Se : Hydrogen Selenide CBr 4 : Carbon Tetrabromide

TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga SiH TMIn : Tri-Methyl-Indium ( CH3 )3In Si H 2 DETe : Di-ethyl-Tellurium ( C2H5 )2Te DEZn : Di-ethyl-Zinc ( C2H5 )2Zn CBr CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂

Al

CH Al 3 TMAl Tri - Methyl - Aluminum ( CH3 )3 三 甲基 鋁

CH 3

CH 3

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化合物半導體材料特性

1. High Electron Mobility高電子移動速率 2. High Frequency Response高頻率響應 3. Wide Band Width 寬幅之頻寬 4. High Linearity高線性度 5. High Power高功率 6. Alternative Choice of Material材料選擇多元性 7. 抗輻射 適用於無線通訊、光纖通訊、光顯示(LED)& 太 陽能產業

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產業供應鏈

、 Freiberg AXT

4~6 ”GaAs Substrate

Microelectronics IC Process

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GaAs Epi- Wafer 磊晶片

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MOCVD Reactor

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Wireless Communication

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IC Package & Testing

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2016-2019 Q2 Financial Result

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