VPEC — Investor Presentation 2019

Sep 4, 2019

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公司簡介

MOCVD 創造世界級之競爭力

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核心技術

MOCVD( 有機金屬氣相沉積法 )

• Metal Organic Chemical Vapor Deposition

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半導體分類(依使用材料)

Element Si Ge , IV-IV SiC, SiGe

SemiconductorGaAs, InP, GaN, GaP, GaSb... ,eCompoundIII-VIV-IV SiC, SiGe3PeriodColumn IIIIIIVVVI2Be鈹BerylliumB硼BoronC碳CarbonN氮NitrogenO氧Oxygen3Mg鎂MagnesiumAl鋁AluminumSi矽SiliconP磷PhosphorusS硫Sulfur4Zn鋅ZincGa鎵GalliumGe鍺GermaniumAs砷ArsenicSe硒Selenium5Cd鎘CadmiumIn銦IndiumSn錫TinSb銻AntimonyTe碲Tellurium6Hg汞MercuryTl鉈ThalliumPb鉛Lead二元化合物Binary : GaAs, InP, GaP,GaN, etc.三元化合物Ternary : InGaAs, InGaP, AlGaAs, etc.四元化合物Quaternary : AlGaInP, InGaAsP, etc.五元化合物Pentanary : AlGaInAsN, etc.II-VIZnSe, ZnS, CdS, etc.	SemiconductorGaAs, InP, GaN, GaP, GaSb... ,eCompoundIII-VIV-IV SiC, SiGe3PeriodColumn IIIIIIVVVI2Be鈹BerylliumB硼BoronC碳CarbonN氮NitrogenO氧Oxygen3Mg鎂MagnesiumAl鋁AluminumSi矽SiliconP磷PhosphorusS硫Sulfur4Zn鋅ZincGa鎵GalliumGe鍺GermaniumAs砷ArsenicSe硒Selenium5Cd鎘CadmiumIn銦IndiumSn錫TinSb銻AntimonyTe碲Tellurium6Hg汞MercuryTl鉈ThalliumPb鉛Lead二元化合物Binary : GaAs, InP, GaP,GaN, etc.三元化合物Ternary : InGaAs, InGaP, AlGaAs, etc.四元化合物Quaternary : AlGaInP, InGaAsP, etc.五元化合物Pentanary : AlGaInAsN, etc.II-VIZnSe, ZnS, CdS, etc.	SemiconductorGaAs, InP, GaN, GaP, GaSb... ,eCompoundIII-VIV-IV SiC, SiGe3PeriodColumn IIIIIIVVVI2Be鈹BerylliumB硼BoronC碳CarbonN氮NitrogenO氧Oxygen3Mg鎂MagnesiumAl鋁AluminumSi矽SiliconP磷PhosphorusS硫Sulfur4Zn鋅ZincGa鎵GalliumGe鍺GermaniumAs砷ArsenicSe硒Selenium5Cd鎘CadmiumIn銦IndiumSn錫TinSb銻AntimonyTe碲Tellurium6Hg汞MercuryTl鉈ThalliumPb鉛Lead二元化合物Binary : GaAs, InP, GaP,GaN, etc.三元化合物Ternary : InGaAs, InGaP, AlGaAs, etc.四元化合物Quaternary : AlGaInP, InGaAsP, etc.五元化合物Pentanary : AlGaInAsN, etc.II-VIZnSe, ZnS, CdS, etc.	SemiconductorGaAs, InP, GaN, GaP, GaSb... ,eCompoundIII-VIV-IV SiC, SiGe3PeriodColumn IIIIIIVVVI2Be鈹BerylliumB硼BoronC碳CarbonN氮NitrogenO氧Oxygen3Mg鎂MagnesiumAl鋁AluminumSi矽SiliconP磷PhosphorusS硫Sulfur4Zn鋅ZincGa鎵GalliumGe鍺GermaniumAs砷ArsenicSe硒Selenium5Cd鎘CadmiumIn銦IndiumSn錫TinSb銻AntimonyTe碲Tellurium6Hg汞MercuryTl鉈ThalliumPb鉛Lead二元化合物Binary : GaAs, InP, GaP,GaN, etc.三元化合物Ternary : InGaAs, InGaP, AlGaAs, etc.四元化合物Quaternary : AlGaInP, InGaAsP, etc.五元化合物Pentanary : AlGaInAsN, etc.II-VIZnSe, ZnS, CdS, etc.	SemiconductorGaAs, InP, GaN, GaP, GaSb... ,eCompoundIII-VIV-IV SiC, SiGe3PeriodColumn IIIIIIVVVI2Be鈹BerylliumB硼BoronC碳CarbonN氮NitrogenO氧Oxygen3Mg鎂MagnesiumAl鋁AluminumSi矽SiliconP磷PhosphorusS硫Sulfur4Zn鋅ZincGa鎵GalliumGe鍺GermaniumAs砷ArsenicSe硒Selenium5Cd鎘CadmiumIn銦IndiumSn錫TinSb銻AntimonyTe碲Tellurium6Hg汞MercuryTl鉈ThalliumPb鉛Lead二元化合物Binary : GaAs, InP, GaP,GaN, etc.三元化合物Ternary : InGaAs, InGaP, AlGaAs, etc.四元化合物Quaternary : AlGaInP, InGaAsP, etc.五元化合物Pentanary : AlGaInAsN, etc.II-VIZnSe, ZnS, CdS, etc.	SemiconductorGaAs, InP, GaN, GaP, GaSb... ,eCompoundIII-VIV-IV SiC, SiGe3PeriodColumn IIIIIIVVVI2Be鈹BerylliumB硼BoronC碳CarbonN氮NitrogenO氧Oxygen3Mg鎂MagnesiumAl鋁AluminumSi矽SiliconP磷PhosphorusS硫Sulfur4Zn鋅ZincGa鎵GalliumGe鍺GermaniumAs砷ArsenicSe硒Selenium5Cd鎘CadmiumIn銦IndiumSn錫TinSb銻AntimonyTe碲Tellurium6Hg汞MercuryTl鉈ThalliumPb鉛Lead二元化合物Binary : GaAs, InP, GaP,GaN, etc.三元化合物Ternary : InGaAs, InGaP, AlGaAs, etc.四元化合物Quaternary : AlGaInP, InGaAsP, etc.五元化合物Pentanary : AlGaInAsN, etc.II-VIZnSe, ZnS, CdS, etc.	SemiconductorGaAs, InP, GaN, GaP, GaSb... ,eCompoundIII-VIV-IV SiC, SiGe3PeriodColumn IIIIIIVVVI2Be鈹BerylliumB硼BoronC碳CarbonN氮NitrogenO氧Oxygen3Mg鎂MagnesiumAl鋁AluminumSi矽SiliconP磷PhosphorusS硫Sulfur4Zn鋅ZincGa鎵GalliumGe鍺GermaniumAs砷ArsenicSe硒Selenium5Cd鎘CadmiumIn銦IndiumSn錫TinSb銻AntimonyTe碲Tellurium6Hg汞MercuryTl鉈ThalliumPb鉛Lead二元化合物Binary : GaAs, InP, GaP,GaN, etc.三元化合物Ternary : InGaAs, InGaP, AlGaAs, etc.四元化合物Quaternary : AlGaInP, InGaAsP, etc.五元化合物Pentanary : AlGaInAsN, etc.II-VIZnSe, ZnS, CdS, etc.	SemiconductorGaAs, InP, GaN, GaP, GaSb... ,eCompoundIII-VIV-IV SiC, SiGe3PeriodColumn IIIIIIVVVI2Be鈹BerylliumB硼BoronC碳CarbonN氮NitrogenO氧Oxygen3Mg鎂MagnesiumAl鋁AluminumSi矽SiliconP磷PhosphorusS硫Sulfur4Zn鋅ZincGa鎵GalliumGe鍺GermaniumAs砷ArsenicSe硒Selenium5Cd鎘CadmiumIn銦IndiumSn錫TinSb銻AntimonyTe碲Tellurium6Hg汞MercuryTl鉈ThalliumPb鉛Lead二元化合物Binary : GaAs, InP, GaP,GaN, etc.三元化合物Ternary : InGaAs, InGaP, AlGaAs, etc.四元化合物Quaternary : AlGaInP, InGaAsP, etc.五元化合物Pentanary : AlGaInAsN, etc.II-VIZnSe, ZnS, CdS, etc.	SemiconductorGaAs, InP, GaN, GaP, GaSb... ,eCompoundIII-VIV-IV SiC, SiGe3PeriodColumn IIIIIIVVVI2Be鈹BerylliumB硼BoronC碳CarbonN氮NitrogenO氧Oxygen3Mg鎂MagnesiumAl鋁AluminumSi矽SiliconP磷PhosphorusS硫Sulfur4Zn鋅ZincGa鎵GalliumGe鍺GermaniumAs砷ArsenicSe硒Selenium5Cd鎘CadmiumIn銦IndiumSn錫TinSb銻AntimonyTe碲Tellurium6Hg汞MercuryTl鉈ThalliumPb鉛Lead二元化合物Binary : GaAs, InP, GaP,GaN, etc.三元化合物Ternary : InGaAs, InGaP, AlGaAs, etc.四元化合物Quaternary : AlGaInP, InGaAsP, etc.五元化合物Pentanary : AlGaInAsN, etc.II-VIZnSe, ZnS, CdS, etc.	SemiconductorGaAs, InP, GaN, GaP, GaSb... ,eCompoundIII-VIV-IV SiC, SiGe3PeriodColumn IIIIIIVVVI2Be鈹BerylliumB硼BoronC碳CarbonN氮NitrogenO氧Oxygen3Mg鎂MagnesiumAl鋁AluminumSi矽SiliconP磷PhosphorusS硫Sulfur4Zn鋅ZincGa鎵GalliumGe鍺GermaniumAs砷ArsenicSe硒Selenium5Cd鎘CadmiumIn銦IndiumSn錫TinSb銻AntimonyTe碲Tellurium6Hg汞MercuryTl鉈ThalliumPb鉛Lead二元化合物Binary : GaAs, InP, GaP,GaN, etc.三元化合物Ternary : InGaAs, InGaP, AlGaAs, etc.四元化合物Quaternary : AlGaInP, InGaAsP, etc.五元化合物Pentanary : AlGaInAsN, etc.II-VIZnSe, ZnS, CdS, etc.
			ompou	ompou	nd
							II-VI
Period		Column IIIII	IV		V	VI
2		Be鈹BerylliumB硼Boron	C碳CarbonN氮Nitro
								二元化合物	Binary : GaAs, InP, GaP,GaN, etc.Ternary : InGaAs, InGaP, AlGaAs, etc.Quaternary : AlGaInP, InGaAsP, etc.Pentanary : AlGaInAsN, etc.
3		Mg鎂MagnesiumAl鋁Aluminum
			Si矽SiliconP Phosph			orusS硫Sulfur砷nicSe硒Selenium銻Te碲		三元化合物 四元化合物 五元化合物
4		Zn鋅ZincGa鎵Gallium	Ge鍺GermaniumAs Arse
5		Cd鎘CadmiumIn銦Indium	Sn錫Sb
			TinAntim			onyTellurium			3
6		Hg汞Tl鉈hlli
			Pb鉛d
		MercuryTaum	Lea

Semiconductor

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磊晶過程中之化學反應

化學反應式：

主要原物料 :

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MO Source + Hydride + Carrier Gas ： H2

A s H 3[: rs ne] A i PH3 : Phosphine SiH 4 : Silane Si H 2 6 : Disiline H2Se : Hydrogen Selenide CBr 4 : Carbon Tetrabromide

TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga SiH TMIn : Tri-Methyl-Indium ( CH3 )3In Si H 2 DETe : Di-ethyl-Tellurium ( C2H5 )2Te DEZn : Di-ethyl-Zinc ( C2H5 )2Zn CBr CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂

Al

CH Al 3 TMAl Tri - Methyl - Aluminum ( CH3 )3 三 甲基 鋁

CH 3

CH 3

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化合物半導體材料特性

1. High Electron Mobility高電子移動速率 2. High Frequency Response高頻率響應 3. Wide Band Width 寬幅之頻寬 4. High Linearity高線性度 5. High Power高功率 6. Alternative Choice of Material材料選擇多元性 7. 抗輻射 適用於無線通訊、光纖通訊、光顯示(LED)& 太 陽能產業

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產業供應鏈

、 Freiberg AXT

4~6 ”GaAs Substrate

Microelectronics IC Process

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GaAs Epi- Wafer 磊晶片

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----- Start of picture text ----- Substrate----- End of picture text -----

MOCVD Reactor

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Wireless Communication

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IC Package & Testing

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2016-2019 Q2 Financial Result

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