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VPEC — Investor Presentation 2019
Sep 11, 2019
52095_rns_2019-09-11_7de597ff-4d4d-4c14-ab6e-569bef8a73c8.pdf
Investor Presentation
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Company Profile World-class leading edge with MOCVD
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Core Technolo gy
MOCVD( 有機金屬氣相沉積法 )
- Metal Organic Chemical Vapor Deposition
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Semiconductor(by Material)
Element Si Ge , IV-IV SiC, SiGe
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| , | ||||||||||||
| Semiconductor | IV-IV | |||||||||||
| SiC, | SiGe | |||||||||||
| III-V | ||||||||||||
| GaAs, | InP, GaN, GaP, GaSb... | |||||||||||
| Com | ound | |||||||||||
| p | ||||||||||||
| II-VI | ||||||||||||
| ZnSe, | ZnS, CdS, etc. | |||||||||||
| Period | Column II | III | IV | V | VI | |||||||
| Be | 鈹 | B | 硼 | C | 碳 | N | 氮 | O | 氧 | |||
| 2 | ||||||||||||
| Beryllium | Boron | Carbon | Nitrogen | Oxygen | 二元化合物 | Binary : GaAs, InP, GaP,GaN, etc. | ||||||
| Mg | 鎂 | Al | 鋁 | Si | 矽 | P | 磷 | S | 硫 | |||
| 3 | Magnesium | Aluminum | Silicon | Phosphorus | Sulfur | 三元化合物 | Ternary : InGaAs, InGaP, AlGaAs, etc. | |||||
| 4 | Zn | 鋅 | Ga | 鎵 | Ge | 鍺 | As | 砷 | Se | 硒 | 四元化合物 | Quaternary : AlGaInP, InGaAsP, etc. |
| Zinc | Gallium | Germanium | Arsenic | Selenium | ||||||||
| Cd | 鎘 | In | 銦 | Sn | 錫 | Sb | 銻 | Te | 碲 | 五元化合物 | Pentanary : AlGaInAsN, etc. | |
| 5 | ||||||||||||
| Cadmium | Indium | Tin | Antimony | Tellurium | ||||||||
| Hg | 汞 | Tl | 鉈 | Pb | 鉛 | |||||||
| 6 | ||||||||||||
| Mercury | Thallium | Lead |
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Semiconductor
二元化合物 Binary : GaAs, InP, GaP,GaN, etc. 三元化合物 Ternary : InGaAs, InGaP, AlGaAs, etc. 四元化合物 Quaternary : AlGaInP, InGaAsP, etc. 五元化合物 Pentanary : AlGaInAsN, etc.
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Chemical Reaction Durin E itax g p y
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化學反應式:
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主要原物料:
MO Source + Hydride + Carrier Gas : H2
A s H 3[: rs ne] A i PH3 : Phosphine SiH 4 : Silane Si H 2 6 : Disiline H2Se : Hydrogen Selenide CBr 4 : Carbon Tetrabromide
TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga SiH TMIn : Tri-Methyl-Indium ( CH3 )3In Si H 2 DETe : Di-ethyl-Tellurium ( C2H5 )2Te DEZn : Di-ethyl-Zinc ( C2H5 )2Zn CBr CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂
TMAl Tri - Methyl - Aluminum ( CH3 )3Al 三 甲基 鋁
CH 3
Al
CH 3
CH 3
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Advantages of Com oundsemiconductor p
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High Electron Mobility高電子移動速率(5.7x higher than CM0S)
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High Frequency Response高頻率響應
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Wide Band Width 寬幅之頻寬 4 . High Linearity高線性度
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High Power高功率
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Alternative Choice of Material材料選擇多元性 7. 抗輻射 適用於無線通訊、光纖通訊、光顯示(LED)& 太陽能產 業
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GaAs in Wireless Communication Su l Chain pp y
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IDM :Skyworks, RFMD, TriQuint, Avago, Anadigics
Sumitomo, Freiberg, AXT 4~6 ”GaAs Substrate
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GaAs Epi- Wafer 磊晶片
Microelectronics IC Process
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Wireless Communication Substrate
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MOCVD Reactor
Foundry: WIN, AWSC, GCS IC Package & Testing
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2016-2019 Q2 Financial Result
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