VPEC — Investor Presentation 2016

May 3, 2016

==> picture [635 x 32] intentionally omitted <==

==> picture [635 x 32] intentionally omitted <==

==> picture [635 x 32] intentionally omitted <==

==> picture [635 x 31] intentionally omitted <==

公司簡介 以 MOCVD 創造世界級之競爭力

==> picture [143 x 146] intentionally omitted <==

1

核心技術

==> picture [65 x 74] intentionally omitted <==

MOCVD( 有機金屬氣相沉積法 )

• Metal Organic Chemical Vapor Deposition

==> picture [461 x 69] intentionally omitted <==

==> picture [461 x 193] intentionally omitted <==

2

半導體分類 依使用材料 ( )

==> picture [65 x 74] intentionally omitted <==

Element Si Ge ,

==> picture [700 x 372] intentionally omitted <==

----- Start of picture text -----

||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|,|
|Semiconductor|IV-IV|
|SiC,|SiGe|
|III-V|
|GaAs,|InP, GaN, GaP, GaSb...|
|Com|ound|
|p|
|II-VI|
|ZnSe,|ZnS, CdS, etc.|
|Period|Column II|III|IV|V|VI|
|Be|鈹|B|硼|C|碳|N|氮|O|氧|
|2|
|Beryllium|Boron|Carbon|Nitrogen|Oxygen|二元化合物|Binary : GaAs, InP, GaP,GaN, etc.|
|Mg|鎂|Al|鋁|Si|矽|P|磷|S|硫|
|3|Magnesium|Aluminum|Silicon|Phosphorus|Sulfur|三元化合物|Ternary : InGaAs, InGaP, AlGaAs, etc.|
|4|Zn|鋅|Ga|鎵|Ge|鍺|As|砷|Se|硒|四元化合物|Quaternary : AlGaInP, InGaAsP, etc.|
|Zinc|Gallium|Germanium|Arsenic|Selenium|
|Cd|鎘|In|銦|Sn|錫|Sb|銻|Te|碲|五元化合物|Pentanary : AlGaInAsN, etc.|
|5|
|Cadmium|Indium|Tin|Antimony|Tellurium|
|Hg|汞|Tl|鉈|Pb|鉛|
|6|
|Mercury|Thallium|Lead|
|3|

----- End of picture text -----

Semiconductor

3

磊晶過程中之化學反應

==> picture [274 x 97] intentionally omitted <==

化學反應式：

==> picture [69 x 61] intentionally omitted <==

主要原物料:

==> picture [65 x 74] intentionally omitted <==

MO Source + Hydride + Carrier Gas： H2

A s H 3[: rs ne] A i PH3 : Phosphine SiH 4 : Silane Si H 2 6 : Disiline H2Se : Hydrogen Selenide CBr 4 : Carbon Tetrabromide

TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga SiH TMIn : Tri-Methyl-Indium ( CH3 )3In Si H 2 DETe : Di-ethyl-Tellurium ( C2H5 )2Te DEZn : Di-ethyl-Zinc ( C2H5 )2Zn CBr CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂

CH Al CH Al 3 3 TMAl Tri - Methyl - Aluminum ( CH3 )3 三 甲基 鋁 CH 4 3

化合物半導體材料特性

==> picture [65 x 74] intentionally omitted <==

1. High Electron Mobility高電子移動速率 2. High Frequency Response高頻率響應 3. Wide Band Width 寬幅之頻寬 4. High Linearity高線性度 5. High Power高功率 6. Alternative Choice of Material材料選擇多元性 7. 抗輻射 適用於無線通訊、光纖通訊、光顯示(LED)& 太 陽能產業

5

產業供應鏈

==> picture [65 x 74] intentionally omitted <==

、 Freiberg AXT

4~6 ”GaAs Substrate

Microelectronics IC Process

==> picture [80 x 32] intentionally omitted <==

GaAs Epi- Wafer 磊晶片

==> picture [130 x 48] intentionally omitted <==

==> picture [125 x 45] intentionally omitted <==

==> picture [125 x 52] intentionally omitted <==

==> picture [130 x 59] intentionally omitted <==

==> picture [151 x 113] intentionally omitted <==

==> picture [209 x 44] intentionally omitted <==

==> picture [111 x 57] intentionally omitted <==

----- Start of picture text -----

Substrate
----- End of picture text -----

MOCVD Reactor

==> picture [145 x 153] intentionally omitted <==

Wireless Communication

==> picture [97 x 84] intentionally omitted <==

IC Package & Testing

6

2012-2015 營運成果

==> picture [65 x 74] intentionally omitted <==

2015	2015	%	2014	%	2013	%	2012	%
Revenue	2,391,899	100.00%	2,073,370	100.00%	2,150,393	100.00%	2,248,522	100.00%
Gross margin	896,369	37.48%	720,975	34.77%	704,050	32.74%	758,214	33.72%
OperatingProfit	670,700	28.04%	524,484	25.30%	520,833	24.22%	568,505	25.28%
Financial Income	20,258	0.85%	40,133	1.94%	31,933	1.48%	-8,892	-0.40%
Tax	-98,301	-4.11%	-96,209	-4.64%	-92,054	-4.28%	-98,084	-4.36%
Net income	592,657	24.78%	468,411	22.59%	460,712	21.42%	461,529	20.53%

7