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VPEC — Interim / Quarterly Report 2025
Sep 10, 2025
52095_rns_2025-09-10_fe85ea17-aae7-4498-b182-a7e18a3ef5e9.pdf
Interim / Quarterly Report
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公司簡介 MOCVD 創造世界級之競爭力
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心 核 技術
MOCVD （有機金屬氣相沉積法）
- Metal Organic Chemical Vapor Deposition
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生產 機台
生產
方式
生產 原理
核心技術
MOCVD 有機金屬化學氣相沉積法 Metal Organic Chemical Vapor Deposition
透過有機金屬化學氣相沉積法，在基板上生
長半導體薄膜的方式，同時透過機台即時監
、、
控，精確控制磊晶層，完成砷化鎵磷化銦
氮化鎵等不同產品磊晶片生產。
磊晶層是由 MOCVD 在腔體中加熱基板，一 個原子層，層層堆疊，行成磊晶層。
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半導體分類 （ 依使用材料 ）
Element Si Ge ,
Semiconductor
IV-IV SiC, SiGe III-V GaAs, InP, GaN, GaP, GaSb... Compound
II-VI ZnSe, ZnS, CdS, etc.
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|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Period|Column II|III|IV|V|VI|
|Be|鈹|B|硼|C|碳|N|氮|O|氧|
|2|
|Beryllium|Boron|Carbon|Nitrogen|Oxygen|二元化合物|Binary : GaAs, InP, GaP,GaN, etc.|
|Mg|鎂|Al|鋁|Si|矽|P|磷|S|硫|
|3|Magnesium|Aluminum|Silicon|Phosphorus|Sulfur|三元化合物|Ternary : InGaAs, InGaP, AlGaAs, etc.|
|4|Zn|鋅|Ga|鎵|Ge|鍺|As|砷|Se|硒|四元化合物|Quaternary : AlGaInP, InGaAsP, etc.|
|Zinc|Gallium|Germanium|Arsenic|Selenium|
|Cd|鎘|In|銦|Sn|錫|Sb|銻|Te|碲|五元化合物|Pentanary : AlGaInAsN, etc.|
|5|
|Cadmium|Indium|Tin|Antimony|Tellurium|
|Hg|汞|Tl|鉈|Pb|鉛|
|6|
|Mercury|Thallium|Lead|
|4|
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磊晶過程中之化學反應
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化學反應式：
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主要原物料 :
MO Source + Hydride + Carrier Gas ： H2
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AsH3 : Arsine PH3 : Phosphine SiH 4 : Silane Si H 2 6 : Disiline H2Se : Hydrogen Selenide CBr 4 : Carbon Tetrabromide
TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga SiH TMIn : Tri-Methyl-Indium ( CH3 )3In Si H 2 DETe : Di-ethyl-Tellurium ( C2H5 )2Te DEZn : Di-ethyl-Zinc ( C2H5 )2Zn CBr CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂
CH Al CH Al 3 3 TMAl Tri - Methyl - Aluminum ( CH3 )3 三 甲基 鋁 5 CH 3
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化合物半導體材料特性
-
High Electron Mobility
高電子移動速率(5.7x higher than CM0S) -
High Frequency Response
高頻率響應 -
Wide Band Width
寬幅之頻寬 -
High Linearity
高線性度 -
High Power
高功率 -
Alternative Choice of Material
材料選擇多元性 -
抗輻射
－ 、 、 、 適用於 微電子產品 HBT pHEMT BiHEMT GaN on XX － 、 、 、 、 光電子產品 PIN （ PD APD ）、 VCSEL LD SC - 、 CW Laser GaN on XX
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微電子產品產業供應鏈
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IDM ： Qorvo, Skyworks Fabless ： Avago, Qualcomm, Richwave,
Sumitomo, Freiberger, AXT
2~6 ”GaAs Substrate
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GaAs Epi- Wafer Microelectronics 磊晶片 IC Process Substrate VPEC is a Pure Foundry ： Epi Provider WIN, AWSC
Wireless Communication
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VPEC is a Pure MOCVD Reactor Epi Provider
IC Package & Testing
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2022 年 -2025 年 H1 損益情形
| 2025 H1 | % | 2024 | % | 2023 | % | 2022 | % | |
|---|---|---|---|---|---|---|---|---|
| Revenue | 1,507,750 | 100% | 3,241,217 | 100% | 2,694,104 | 100% | 2,603,629 | 100% |
| Gross margin | 562,216 | 37% | 1,278,964 | 39% | 1,108,914 | 41% | 1,089,007 | 42% |
| Operating Profit |
301,054 | 20% | 721,214 | 22% | 542,069 | 20% | 579,950 | 22% |
| Non- operating income & expense |
-80,027 | -5% | 96,460 | 3% | -347 | 0% | 87,533 | 3% |
| Tax | -27,431 | -2% | -146,619 | -5% | -91,490 | -3% | -122,755 | -5% |
| Net income | 193,596 | 13% | 671,055 | 21% | 450,232 | 17% | 544,728 | 21% |
| EPS | 1.05 | 3.63 | 2.43 | 2.95 |
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2025 Outlook
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的内容入您的内容输入您的内
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5G Mobile
内容输入您的内容.
01
Penetration
WiFi 7
02
微電子
V2X
03
04 IoT Smart Link
(4G PA)
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VPEC Proprietary and Confidential
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2025 Outlook
Data Center High Speed Connectivity
PD for 800G VCSEL for 400G & 800G VCSEL / PD
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3D-sening
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光電子 03
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VCSEL
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AR/VR 機器視覺
低軌道衛星
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Future Driving Engines 、 、 P-sensor 3D Sensing ToF
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車用光達 (LD/PD)
無人機
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AI glass
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VPEC Proprietary and Confidential 矽光子
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