VPEC — Interim / Quarterly Report 2017

Jan 8, 2018

==> picture [635 x 32] intentionally omitted <==

==> picture [635 x 32] intentionally omitted <==

==> picture [635 x 32] intentionally omitted <==

==> picture [635 x 31] intentionally omitted <==

Company Profile World-class leading edge with MOCVD

==> picture [143 x 146] intentionally omitted <==

Core Technolo gy

MOCVD( 有機金屬氣相沉積法 )

• Metal Organic Chemical Vapor Deposition

==> picture [461 x 69] intentionally omitted <==

==> picture [461 x 193] intentionally omitted <==

2

Semiconductor(by Material)

Element Si Ge , IV-IV SiC, SiGe

==> picture [672 x 372] intentionally omitted <==

----- Start of picture text -----

||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|,|
|Semiconductor|IV-IV|
|SiC,|SiGe|
|III-V|
|GaAs,|InP, GaN, GaP, GaSb...|
|Com|ound|
|p|
|II-VI|
|ZnSe,|ZnS, CdS, etc.|
|Period|Column II|III|IV|V|VI|
|Be|鈹|B|硼|C|碳|N|氮|O|氧|
|2|
|Beryllium|Boron|Carbon|Nitrogen|Oxygen|二元化合物|Binary : GaAs, InP, GaP,GaN, etc.|
|Mg|鎂|Al|鋁|Si|矽|P|磷|S|硫|
|3|Magnesium|Aluminum|Silicon|Phosphorus|Sulfur|三元化合物|Ternary : InGaAs, InGaP, AlGaAs, etc.|
|4|Zn|鋅|Ga|鎵|Ge|鍺|As|砷|Se|硒|四元化合物|Quaternary : AlGaInP, InGaAsP, etc.|
|Zinc|Gallium|Germanium|Arsenic|Selenium|
|Cd|鎘|In|銦|Sn|錫|Sb|銻|Te|碲|五元化合物|Pentanary : AlGaInAsN, etc.|
|5|
|Cadmium|Indium|Tin|Antimony|Tellurium|
|Hg|汞|Tl|鉈|Pb|鉛|
|6|
|Mercury|Thallium|Lead|

----- End of picture text -----

Semiconductor

二元化合物 Binary : GaAs, InP, GaP,GaN, etc. 三元化合物 Ternary : InGaAs, InGaP, AlGaAs, etc. 四元化合物 Quaternary : AlGaInP, InGaAsP, etc. 五元化合物 Pentanary : AlGaInAsN, etc.

3

Chemical Reaction Durin E itax g p y

==> picture [274 x 97] intentionally omitted <==

化學反應式：

==> picture [42 x 37] intentionally omitted <==

主要原物料:

MO Source + Hydride + Carrier Gas ： H2

A s H 3[: rs ne] A i PH3 : Phosphine SiH 4 : Silane Si H 2 6 : Disiline H2Se : Hydrogen Selenide CBr 4 : Carbon Tetrabromide

TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga SiH TMIn : Tri-Methyl-Indium ( CH3 )3In Si H 2 DETe : Di-ethyl-Tellurium ( C2H5 )2Te DEZn : Di-ethyl-Zinc ( C2H5 )2Zn CBr CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂

TMAl Tri - Methyl - Aluminum ( CH3 )3Al 三 甲基 鋁

CH 3

Al

CH 3

CH 3

4

Advantages of Com oundsemiconductor p

1. High Electron Mobility高電子移動速率(5.7x higher than CM0S)

2. High Frequency Response高頻率響應

3. Wide Band Width 寬幅之頻寬 4 . High Linearity高線性度

4. High Power高功率

5. Alternative Choice of Material材料選擇多元性 7. 抗輻射 適用於無線通訊、光纖通訊、光顯示(LED)& 太陽能產 業

5

GaAs in Wireless Communication Su l Chain pp y

==> picture [145 x 153] intentionally omitted <==

IDM :Skyworks, RFMD, TriQuint, Avago, Anadigics

Sumitomo, Freiberg, AXT 4~6 ”GaAs Substrate

==> picture [80 x 32] intentionally omitted <==

GaAs Epi- Wafer 磊晶片

Microelectronics IC Process

==> picture [130 x 48] intentionally omitted <==

==> picture [125 x 45] intentionally omitted <==

==> picture [125 x 52] intentionally omitted <==

Wireless Communication Substrate

==> picture [151 x 113] intentionally omitted <==

==> picture [233 x 44] intentionally omitted <==

MOCVD Reactor

Foundry: WIN, AWSC, GCS IC Package & Testing

6

- - 2014 2017Q1 Q3 Financial Result

	2017Q1-Q3	%	2016	%	2015	%	2014	%
Revenue	1,556,333	100.00%	2,182,825	100.00%	2,391,899	100.00%	2,073,370	100.00%
Gross margin	536,535	34.47%	809,059	37.06%	896,369	37.48%	720,975	34.77%
Operating Profit	367,614	23.62%	588,072	26.94%	670,700	28.04%	524,487	25.30%
Financial Income	-21,737	-1.40%	-29,431	-1.35%	20,258	0.85%	40,133	1.94%
Tax	-60,759	-3.90%	-91,534	-4.19%	-98,301	-4.11%	-96,209	-4.64%
Net income	285,118	18.32%	467,107	21.40%	592,657	24.78%	468,411	22.59%
EPS	1.56		2.12		2.40		1.90

7