VPEC — Interim / Quarterly Report 2015

Mar 10, 2016

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Company Profile World-class leading edge with MOCVD

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Core Technology

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MOCVD( 有機金屬氣相沉積法 )

• Metal Organic Chemical Vapor Deposition

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Semiconductor(by Material)

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Element Si Ge ,

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||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|,|
|Semiconductor|IV-IV|
|SiC,|SiGe|
|III-V|
|GaAs,|InP, GaN, GaP, GaSb...|
|Com|ound|
|p|
|II-VI|
|ZnSe,|ZnS, CdS, etc.|
|Period|Column II|III|IV|V|VI|
|Be|鈹|B|硼|C|碳|N|氮|O|氧|
|2|
|Beryllium|Boron|Carbon|Nitrogen|Oxygen|二元化合物|Binary : GaAs, InP, GaP,GaN, etc.|
|Mg|鎂|Al|鋁|Si|矽|P|磷|S|硫|
|3|Magnesium|Aluminum|Silicon|Phosphorus|Sulfur|三元化合物|Ternary : InGaAs, InGaP, AlGaAs, etc.|
|4|Zn|鋅|Ga|鎵|Ge|鍺|As|砷|Se|硒|四元化合物|Quaternary : AlGaInP, InGaAsP, etc.|
|Zinc|Gallium|Germanium|Arsenic|Selenium|
|Cd|鎘|In|銦|Sn|錫|Sb|銻|Te|碲|五元化合物|Pentanary : AlGaInAsN, etc.|
|5|
|Cadmium|Indium|Tin|Antimony|Tellurium|
|Hg|汞|Tl|鉈|Pb|鉛|
|6|
|Mercury|Thallium|Lead|
|3|

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Semiconductor

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Chemical Reaction During Epitaxy

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化學反應式：

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主要原物料:

MO Source + Hydride + Carrier Gas： H2

A s H 3[: rs ne] A i PH3 : Phosphine SiH 4 : Silane Si H 2 6 : Disiline H2Se : Hydrogen Selenide CBr 4 : Carbon Tetrabromide

TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga SiH TMIn : Tri-Methyl-Indium ( CH3 )3In Si H 2 DETe : Di-ethyl-Tellurium ( C2H5 )2Te DEZn : Di-ethyl-Zinc ( C2H5 )2Zn CBr CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂

CH Al CH Al 3 3 TMAl Tri - Methyl - Aluminum ( CH3 )3 三 甲基 鋁 CH 4 3

Advantages of Compoundsemiconductor

1. High Electron Mobility高電子移動速率(5.7x higher than CM0S)

2. High Frequency Response高頻率響應 3. Wide Band Width 寬幅之頻寬 4 . High Linearity高線性度 5. High Power高功率

3. Alternative Choice of Material材料選擇多元性 7. 抗輻射 適用於無線通訊、光纖通訊、光顯示(LED)& 太陽能產 業

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GaAs in Wireless Communication S ~~upply Chain~~

Sumitomo, Freiberg, AXT

4~6 ”GaAs Substrate GaAs Epi- Wafer 磊晶片

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MOCVD Reactor
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IDM :Skyworks, RFMD, TriQuint, Avago, Anadigics

Microelectronics IC Process Wireless Communication Substrate Foundry: WIN, AWSC, GCS IC Package & Testing

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2012-2015Q1-Q3 Financial Result

2015Q1-Q3	2015Q1-Q3	%	2014	%	2013	%	2012	%
Revenue	1,764,748	100.00%	2,073,370	100.00%	2,150,393	100.00%	2,248,522	100.00%
Gross margin	666,503	37.77%	720,975	34.77%	704,050	32.74%	758,214	33.72%
OperatingProfit	506,718	28.71%	524,484	25.30%	520,833	24.22%	568,505	25.28%
Financial Income	44,950	2.55%	40,133	1.94%	31,933	1.48%	-8,892	-0.40%
Tax	-75,405	-4.27%	-96,209	-4.64%	-92,054	-4.28%	-98,084	-4.36%
Net income	476,263	26.99%	468,411	22.59%	460,712	21.42%	461,529	20.53%

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