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SICC Co., Ltd. Earnings Release 2025

Mar 30, 2026

50726_rns_2026-03-30_bbbddc98-0200-4d4b-9e43-f950e8326671.pdf

Earnings Release

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Hong Kong Exchanges and Clearing Limited and The Stock Exchange of Hong Kong Limited take no responsibility for the contents of this announcement, make no representation as to its accuracy or completeness and expressly disclaim any liability whatsoever for any loss howsoever arising from or in reliance upon the whole or any part of the contents of this announcement.

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A joint stock company incorporated in the People's Republic of China with limited liability)

(Stock Code: 2631)

SUPPLEMENTAL ANNOUNCEMENT IN RELATION TO 2025 ANNUAL RESULTS ANNOUNCEMENT

Reference is made to the 2025 Annual Results Announcement (the "Announcement") of SICC CO., LTD. (the "Company") published on 27 March 2026. Unless otherwise stated, capitalised terms used herein shall have the same meanings as defined in the Announcement.

The Company would like to clarify that the three images displayed on pages 19, 20, and 33 of the Announcement should be revised as follows:

Global SiC power semiconductor device market size, in terms of sales revenue
Million USD, 2019-2030E

CAGR 2019-2023 2024E-2030E
Total 52.2% 35.2%
xEv 66.7% 36.1%
Photovoltaic + ESS* 42.1% 27.2%
Power grid 4.2% 24.5%
Rail transportation 121.9% 25.3%
Emerging industries** 39.2%
Other*** 31.2% 38.5%

Note: ESS for Energy Storage System
Note: Emerging industries include home appliances, low-altitude flights and data centers
**Note: other industries include xEV charging, wind energy, UPS, oil and natural gas, etc.

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Global Silicon Carbide Substrate Market, by Sales Revenue

billion RMB, 2019-2030E

CAGR 2019-2023 2024E-2030E
Total 29.4% 39.0%
Conductive silicon carbide substrate 36.7% 42.1%
Semi-insulating silicon carbide substrate 16.2% 24.6%

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Note: The market size only includes products for external sales, and data of self-produced and self-used products are not included.)

SICC 天后先进

SICC successfully developed 12-inch semi-insulated-type, conductive, P-type substrate

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12-inch high purity silicon carbide substrate

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12-inch conductive n-type silicon carbide substrate

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12-inch conductive p-type silicon carbide substrate

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Save for the above, all other information stated in the Announcement remain unchanged.

By order of the Board
SICC CO., LTD.
Mr. Zong Yanmin
Chairman of the Board,
Executive Director and General Manager

Hong Kong, 30 March 2026

As at the date of this announcement, the Board comprises: (i) Mr. Zong Yanmin, Mr. Gao Chao and Mr. Wang Junguo as executive Directors; (ii) Mr. Qiu Yufeng, Ms. Li Wanyue and Mr. Fang Wei as non-executive Directors; and (iii) Mr. Li Honghui, Ms. Liu Hua and Mr. Lai Kwok Hung Alex as independent non-executive Directors.

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