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RECTRON Investor Presentation 2019

Nov 27, 2019

51998_rns_2019-11-27_a2894b7c-a97c-4e8a-8049-a90138974b19.pdf

Investor Presentation

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Welcome:
Roadmap for Rectron Ltd

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Table of Content:
1.Company profile
2.Milestones for Rectron
3.Global sales organization
4.Product line
5.Major applications
6.Turnover & GP
7.Sales analysis by product of
2018/19
8.Major customers

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Company Profile

  • Established: Jan 23rd,1976

  • Capital: NT$ 1,663,028,810

Employees: 280 person

  • Chairmen : Mrs. Crystal-Lin

Headquarter: #192-1, Sec. 4, Chengde Rd, Taipei, Taiwan

  • Factory Locations: Tu-Cheng, Taipei, Taiwan

JiaShan, ZjheJiang, China

  • Business Rectifier /Transistor(MOSFET)/SiC

  • manufacture &sale

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Rectron Ltd

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Tu-Cheng factory
ZheJiang factory
(GPP wafer)
(SMD/Bridge/MOS/SiC)
SMD product line
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Company Chronology
1976 Rectron Ltd establishment in Taiwan
1985 Listed in the stock market and became public in January
2001 Setup Rectron (ZheJiang) Ltd.
2003 Rectron ZheJiang was certified for ISO-9001 & QS9000
2005 Rectron ZheJiang was certified for ISO14000
2006 Started building new ZheJiang factory
Certified for ISO-9001/TS16949-2002
2008 New ZheJiang factory completed
         Upgraded ISO-9001/TS16949 to 2009 version
2012 Rectron ZheJiang was certified for OHSAS18000
2013 Awarded for 1A slim type bridge for charger by hallmark
2017  Awarded for 3A slim type bridge for adaptor by hallmark
2018  TS16949 upgraded to IATF16949-2016 version

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2019 4 items( rectifier/transistor) awarded for 18W charger by
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Global Sales Organization
Rectron Ltd.
Oversea
Great China
ShenZhen ZheJiang
TuCheng
Office Office
Office
Rectron Icarus Willas Toki & Furutaka Rectronix Willas G.L
USA Europe TWN Japan Singapore HK Korea
Rectron
India
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Product line

Discrete rectifiers TVS/ESD/Zeners

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400 – 5000W TVS 200mW – 5W Zeners Low Cap. ESD Arrays

Glass passivated Schottky (20-200V) Fast recovery (20-500ns) High voltage (1KV-16KV) Power Diodes

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Transistors Trench MOSFET - Low rdson & Cg - 2 to 10mΩ High voltage Gen3 MOSFET - 600V to 800V - 5 to 17A PNP/NPN & Darlington - signal & power

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10A – 50A Bypass Diodes

Bridge rectifiers

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DIP, SIP, mini-dip 0.5A - 35A bridges Glass passivated Fast recovery Schottky

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Major Applications

Power Supply Consumer Electronics
AC-DC Power Supply
DC-DC Power Supply
Li-Ion Battery Charger
LCD TV Power Supply
Adaptor
Alarm/Security Systems
Home appliance
GPS
Set-Top Box
Microwave Oven
Audio Amps
Automotive Industrial
ECU
BMU
MBS
Car lighting
Automated Test Equipment
Bar Code Scanner
Telecomunication equipment
HVAC
RFID Reader
Alarm/Security Systems
Computing and Telecom Lighting
Routers & handsets
Inkjet Printer
Desktop Computer / Server
Battery protection
Signage/LED Ballast
LED Lighting
LED Driver
Lighting ballast
Fluorescent lighting ballast

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Turnover & GP ( 2014~2019 Q3)

NTD,000
2014
2015 2016 2017 2018 2018
Q1~Q3
2019
Q1~Q3
Sales
Revenue
614,311 511,704 518,051 449,641 520,371 389,735 370,227
G.P 152,055 152,869 156,719 146,110 176,787 123,314 120,255
G.P rate 25% 30% 30% 32% 32% 32% 32%

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Product Analysis of 2018 / 2019-F3Q (By Aresa ) 2018 2019

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[ 百分比 ]Thailand [ 百分比 ]UK [ 百分比 ]USA <1%Vietnam <1% Vietnam <1% Australia[ 百
<1%Australia
[ 百分比 ]Taiwan [ 百分比 ]Thailand [ 百分比 ]USA 分比 ]
[ 百分 [ 百分比 ]UK
比 ]Singapore [ 百分比 ]Taiwan
[ 百分
[ 百分比 ]
[ 百分比 ]Korea 比 ]Singapore China
[ 百分比 ]
China [ 百分比 ]Korea
[ 百分比 ]Japan
[ 百分比 ]IJapan
[ 百分比 ]India
9% India
[ 百分比 ] HK
[ 百分比 ]HK
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Product Analysis of 2018 / 2019 -F3Q by product

2018 2019

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TVS
STD Rec. [ 百分比 ]
[ 百分比 ]
Small
signal
[ 百分比 ]
SiC
<1%
Schottky ESD
[ 百分比 ] FR Rec. MOSFET 0%
[ 百分比 ] 0%
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Bridge
[ 百分比 ]
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TVS
[ 百分比 ]
Std Rec.
[ 百分比 ]
Bridge
[ 百分比 ]
Small signal
[ 百分比 ]
ESD <1%
SiC
<1% Schottky FR Rec. MOS
[ 百分比 ]
[ 百分比 ] [ 百分比 ]
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Product Analysis of 2018 / 2019-F3Q By application

2018 2019

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Telecom Automotive
[ 百分比 ] [ 百分比 ] Automotive
Telecom
[ 百分比 ]
[ 百分比 ]
Power
[ 百分比 ]
Power
[ 百分比 ] Consumer
[ 百分比 ]
Consumer
[ 百分比 ]
Industry
[ 百分比 ]
Industry
[ 百分比 ]
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Major Customer v

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Automotive Customer

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2020 New Products

Smaller Package DFN1006/SOT363/SOD923 Mos, Shky, Rectifier

SIC Schottky Vd: 1200V, If: 5~20A

MosFET Vds: 30~650V,

Planar Schottky 45~100V Vf = 0.5~0.6 Planar Schooky 100~200V, Vf= 1.0~1.1V

Standard Bridge 50~1000V, Vf= 1.0V

Trench Mosfet Vds: 30~650V, Rds: 0.5mohm ~

Low Vf Bridge ~1000V, Vf= 0.86V

Low Vf Schottky 45~100V, Vf=0.38V 100~300V, Vf=0.80V

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5G ,Cloud, AI

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Thanks!!