BLUGLASS LIMITED - AGM Information 2014

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2014 AGM PRESENTATION 24 November 2014

BLUGLASS LIMITED 2014 AGM PRESENTATION

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DISCLAIMER
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This document has been prepared by BluGlass Limited to provide existing and prospective investors in BluGlass Limited with a summary of progress to date.
Any statements, opinions, or other material contained in this document do not constitute any commitments, representations or warranties by BluGlass Limited or/and associated entities or its directors, agents and employees. Except as required by law, and only to the extent so required, directors, agents and employees of BluGlass Limited shall in no way be liable to any person or body for any loss, claim, demand, damages, costs or expenses of whatsoever nature arising in any way out of, or in connection with, the information contained in this document.
This document includes certain information which reflects various assumptions. The assumptions may or may not prove to be correct. Recipients of the document must make their own independent investigations, consideration and evaluations prior to making any decisions to invest in the Company.

BLUGLASS LIMITED 2014 AGM PRESENTATION

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IN REVIEW

BLUGLASS LIMITED 2014 AGM PRESENTATION

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FACILITIES UPGRADE WORK
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BLUGLASS LIMITED 2014 AGM PRESENTATION 5

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FACILITY UPGRADE COMPLETE
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SIGNIFICANT PROGRESS DURING 2014
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December 2013		First customer revenues received for MOCVD custom epitaxy orders
During the Year		14 additional patents granted in strategic semiconductor markets
During the Year		Added three new key staff, including GaN and semiconductor hardware design experts
July 2014		Reported a large improvement (over previous results) in light output of RPCVD p-GaN grown on MOCVD partial LED structures
August 2014		Scaled-up RPCVD system (BLG-300) comes online after completion of facilities upgrade
October 2014		BluGlass ranked as Global Top 30 semi-finalist for Global Cleantech Cluster Association Later Stage Awards
November 2014		Received first early trial RPCVD custom epitaxy order Appointed US based expert custom epitaxy agent for MOCVD BLG-300 results now on par with BLG-180

BLUGLASS LIMITED 2014 AGM PRESENTATION

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2014 FINANCIAL RESULTS
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CURRENT CASH POSITION (as at 30 Sep 2014)	CURRENT CASH POSITION (as at 30 Sep 2014)	CURRENT CASH POSITION (as at 30 Sep 2014)	$3.6M

AS AT JUNE 30	FY12	FY13	FY14
Revenue and Other Income $’000	2,478	4,726	4,112
Net loss $’000	(6,231)	(1,676)	(2,898.4)
NET CASH	3,549	5,590	2,445

KEY CASH EVENTS:

July 2013 - $3M Cleantech Innovation Grant (paid quarterly to end of CY 2015)
September 2014 - $2.14m R&D tax credit (paid yearly in arrears)
Total customer epitaxy revenue received to date $413,000
~$150,000 received in custom epitaxy revenue since July 2014
Current Revenue / month rate is $30K / month
Current capacity and staffing allows a Revenue / month rate of $80K / month ( $1M / year ) with no additional capital expenditure

BLUGLASS LIMITED 2014 AGM PRESENTATION

AHEAD

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PERFORMANCE CARD
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WHAT WE SET OUT TO DO

WHAT WE ACHIEVED

TECHNOLOGY

Meet milestones, especially p-GaN performance
Accelerate R&D in other areas (GaN on silicon)
Increase activity on PV technology and milestones
Increased RPCVD light output and continued progress towards Brighter LED milestone
Work commenced on GaN / silicon programme
Upgraded facilities and commissioned a MOCVD & the BLG-300 RPCVD systems

MARKETS

Continue to focus on LED, PV
Evaluate other applications, e.g. power electronics
LED market continues to drive our research efforts
New LED and power electronics customers for BluGlass’ custom epitaxy business
There is increasing interest & opportunity for RPCVD in the power electronics and AlN markets

COMMERCIALISATION

Connected with tier 1 & 2 players in Asia and North America following mid-year technology results
Continue dialogue with market leaders in the LED value chain
Enter into commercialisation through a number of options including; licensing, strategic partnerships and providing foundry service
Launched custom epitaxy business and attracted new customers
BLUGLASS PRESENTATION – JUNE 2012 RPCVD customer trial has commenced

BLUGLASS LIMITED 2014 AGM PRESENTATION

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IP PORTFOLIO MANAGEMENT
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IP STRATEGY

We are building a defendable portfolio of patents whilst constantly monitoring the competitive landscape

2013	2013	November 2014	November 2014
17	 Pending patent applications	15	 Provisional and pending patent applications
17	 International granted patents in six patent families	31	 International granted patents in six patent families  Granted in key semiconductor markets including Europe, China, Japan and the US

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RPCVD APPLICATIONS OVERVIEW
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BLUGLASS LIMITED 2014 AGM PRESENTATION

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RPCVD COMMERCIALISATION OPTIONS
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Vendor Path to Market e.g. LED Manufacturer JV or licence Strategic Partner e.g Nitride Foundry JV or licence Commercial discussions e.g. MOCVD / commenced - actively Semiconductor JV or licence evaluating both the direct Equipment Manufacturer path to market or via a strategic partner BluGlass Custom epi service Phase I – III followed BluGlass Foundry by expanded foundry i.e. build new facility Direct to Market BluGlass Equipment Retrofit Business

Note: A similar commercialisation approach applies to most of the RPCVD applications BLUGLASS PRESENTATION – JUNE 2012

BLUGLASS LIMITED 2014 AGM PRESENTATION 12

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HB LED PATH TO MARKET
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HB LED MARKET OPPORTUNITY

VALUE PROPOSITION

Low temperature p-GaN to enable increased LED efficiency by reducing the degradation of MQW during growth

p-GaN roadmap is progressing

STATUS

MQW and GaN / Si work has commenced
Initial commercial discussions with LED device manufacturers and equipment manufacturers

POSSIBLE STRATEGIC PARTNER

Brighter LEDs Milestone Industry Acceptance Commercialisation Demonstration Industry evaluation of Commercialise the

(p-GaN or p-GaN + MQW) RPCVD performance technology for LEDs via demonstrate that RPCVD offers . (customer, strategic strategic partnership higher performing devices partner etc) (device or equipment), or licensing

BLUGLASS LIMITED 2014 AGM PRESENTATION

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HB LED MARKET OPPORTUNTITY
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HB LED MARKET OPPORTUNITY

MOCVD UNIT SALES 2013-2017E , (Gartner Research and Berenburg Estimate)

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 LED lighting market will reach $25.6B of the $82B overall lighting market

US $990M[1] Aixtron & Veeco MOCVD revenue in 2013
CAGR of 14.13% (20132018)[1 ]
186-228 MOCVD shipped in 2014[2 ]

 Expected to reach 500[1] MOCVD systems shipped in 2017

Berenburg Research, 18 July 2014 2. DIGITIMES Research, 30 May 2014

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UV LEDs POTENTIAL RPCVD MARKET
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UV LEDs MARKET OPPORTUNITY

RPCVD can potentially enable high quality aluminium (Al) rich AlGaN to achieve increased UV LED efficiency.

VALUE PROPOSITION

There is a sizable market potential in water treatment and medical applications for UV LEDs.

Currently using mercury tubes , however nitride based UV LEDs have many potential advantages such as size, performance, cost, higher efficiency & small form factor and less health risk in water purification and medical applications (no toxic mercury).

Al rich p-AlGaN

RPCVD ENABLERS

 Al rich AlGaN MQW

PRODUCT / REVENUE OPPORTUNTITIES

 Foundry

 Retrofit Equipment  STATUS Not yet commenced

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UV LEDs MARKET OPPORTUNITY
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UV LED MARKET size 2012-2017

(UV LEDs Report, Yole Developement, March 2013)

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UV LED MARKET OPPORTUNITY

UV LED is expected to grow from $45M in 2012 to nearly $270M by 2017[3] with a CAGR of ~43%[3 ]

BLUGLASS PRESENTATION – JUNE 2012

UV LEDs Report Yole Developement, March 2013

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GREEN & YELLOW LEDs
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GREEN & YELLOW LEDs MARKET OPPORTUNITY

VALUE PROPOSITION

Low temperature p-GaN to enable increased LED efficiency by reducing the degradation of the MQW during growth. Low temperature RPCVD can potentially enable high quality indium rich InGaN MQWs necessary for longer wavelength LEDs such as green and yellow.

MARKET OPPORTUNITY

Yellow LEDs are a compelling technology alternative to the use of yellow phosphor coated blue LEDs for the general lighting market
Green LEDs can be used in RGB lighting applications
Low temperature p-GaN

RPCVD ENABLERS

Indium rich InGaN MQW

 Custom epitaxy / foundry PRODUCT / REVENUE OPPORTUNTITIES  Equipment retrofit - p-GaN / MQW systems  STATUS Early trials commenced

BLUGLASS LIMITED 2014 AGM PRESENTATION 17

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InGaN CPV PATH TO MARKET
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InGaN CPV MARKET OPPORTUNITY

VALUE PROPOSITION

InGaN has a direct band gap with wide tunability. This can potentially be exploited in a solar cell to allow more energy to be converted to power from the solar spectrum.

RPCVD has the potential to grow indium (In) rich InGaN due to its low temperature process capability.

Climate Ready grant initiated R&D resulting in key patent filed

STATUS

Discussions underway with external granting authorities

POSSIBLE STRATEGIC PARTNER

Product Prototyping Commercialisation InGaN Performance Demonstration Demonstrate InGaN solar Commercialise the cell prototypes: technology for CPV via Show improved performance indium . InGaN / silicon, tandem strategic partnership rich InGaN solar cells on silicon & (device), licensing and / or multi junction cells foundry

BLUGLASS LIMITED 2014 AGM PRESENTATION 18

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InGaN CPV MARKET OPPORTUNTITY
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InGaN CPV MARKET OPPORTUNITY

CPV market is expected to grow to 4.75GW by 2020[4]

 CPV continues to emerge as the most effective method to deliver large scale, cost effective renewable energy from the sun

CPV MARKET, GLOBAL INSTALLED CAPACITY , MW 2011-2022

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GlobalData, Primary Research

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POWER ELECTRONICS PATH TO MARKET
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POWER ELECTRONICS MARKET OPPORTUNITY

GaN / Si is prone to cracking and bowing during high temperature manufacture due to large lattice & thermal mismatch

VALUE PROPOSITION

Low temperature RPCVD has the potential to reduce bowing, cracking and to simplify the process

STATUS

 Commenced initial work on BLG-180 and BLG-300. The BLG-300 enables BluGlass to commence work on larger size wafers (up to 1 x 8 inch)

POSSIBLE STRATEGIC PARTNER

GaN HEMT on Silicon Performance Demonstration Show improved (over MOCVD) GaN process on silicon wafers

Industry Acceptance Commercialisation Industry evaluation of Commercialise the technology RPCVD GaN HEMT / Si for power electronics via . performance strategic partnership (device (customer, strategic or equipment), licensing partner etc) and /or foundry and equipment retrofit

BLUGLASS PRESENTATION – JUNE 2012

BLUGLASS LIMITED 2014 AGM PRESENTATION 20

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POWER ELECTRONICS MARKET
OPPORTUNTITY
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POWER ELECTRONICS MARKET OPPORTUNITY

GaN POWER DEVICE MARKET IMS Research Feb 2012

GaN power electronics is an emerging market, worth $12.6M in 2012[5]
Forecast CAGR of 63.7% to 2022 to reach $1.75B[5 ]

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IMS Research, Feb 2012

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LASER DIODES POTENTIAL RPCVD
MARKET
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LASER DIODES MARKET OPPORTUNITY

The same value proposition that exists for HB LEDs through low temperature VALUE PROPOSITION p-GaN is applicable for the Laser Diode market offering improved device efficiency through reduced degradation of the MQW

The global laser diode market was valued at US $4.6B in 2013[6 ]
MARKET OPPORTUNITY With an expected CAGR of 12.6% from 2014-2020[6 ]  Estimated to reach US $10.26B in 2020[6 ]
RPCVD ENABLERS Low temperature p-GaN  Custom epitaxy / foundry
PRODUCT / REVENUE OPPORTUNTITIES  Equipment retrofit  Not yet commenced
STATUS

BLUGLASS PRESENTATION – JUNE 2012 6. Transparency Market Research “Laser Diode Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast, 2014 - 2020,

BLUGLASS LIMITED 2014 AGM PRESENTATION 22

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ALUMINIUM NITRIDE TEMPLATES
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ALUMINIUM NITRIDE TEMPLATES MARKET OPPORTUNITY	ALUMINIUM NITRIDE TEMPLATES MARKET OPPORTUNITY
VALUE PROPOSITION	Potential for lower defect density which can lead to significantly improved device efficiency and performance output in power electronic and LED applications
MARKET OPPORTUNITY	Power electronics and LEDs (including UV LEDs) - see market data for Power electronics and LEDs
RPCVD ENABLERS	 Low temp AlN on sapphire or silicon
PRODUCT / REVENUE OPPORTUNTITIES	 Custom epitaxy / foundry  Equipment Retrofit
STATUS	 Initial R&D work commenced

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CUSTOM EPI/ FOUNDRY
PATH TO MARKET
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CUSTOM EPITAXY / FOUNDRY MARKET OPPORTUNITY

MOCVD capability with leading edge staff

VALUE PROPOSITION

Fast prototyping

PRODUCT / REVENUE OPPORTUNTITIES

LED wafers

 Power electronics wafers

Other applications
BluGlass now has multiple customers and growing revenue generation

STATUS

 Engaged xVI (USA) as a distribution partner for MOCVD custom epitaxy  Current revenue ~$30K/month with the potential to reach $80k / month or $1M p.a

PHASE 1

PHASE 2

PHASE 3

Additional revenue for BLG by utilising existing MOCVD system spare capacity. Potential for approximately $1M in revenue . p.a

Increase capacity (extra staffing and shifts, no additional CAPEX). Potential to expand to . $2.4M in revenue p.a

MOCVD expansion and increase emphasis on RPCVD services. Increase system capacity (CAPEX ~$1.8M) with a maximum revenue potential of $12M

BLUGLASS PRESENTATION – JUNE 2012

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THE CUSTOM EPITAXY BUSINESS
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BluGlass offers Gallium Nitride based Research & Development services for the manufacture of custom nitride templates and . device wafers through an agreement with BLUGLASS PRESENTATION – JUNE 2012 xVI Technologies BLUGLASS LIMITED 2014 AGM PRESENTATION 25

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MOCVD & RPCVD CUSTOM EPI
CAPABILITY
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BLUGLASS LIMITED 2014 AGM PRESENTATION 26

THE TECHNOLOGY UPDATE

BLUGLASS LIMITED 2014 AGM PRESENTATION

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BENEFITS OF RPCVD FOR LEDs
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A low temperature growth system such as RPCVD may offer LED manufacturers compelling performance advantages at several stages of device growth. Low temperature p-GaN is one area that BluGlass is presently focusing on.

LED STRUCTURE GROWN USING MOCVD

BENEFITS OF RPCVD GROWTH

p-GaN grown at intermediate to high temperature

Multi-Quantum-Well (MQW) InGaN layer, the ACTIVE REGION of an LED - grown at low temperature

The higher temperature growth of the p-GaN top layers compared to the MQW layer can cause degradation to the active MQW layer and reduce the LEDs light output. MOCVD cannot effectively grow high performance p-GaN at lower temperatures.

n-GaN grown at high temperature

GaN grown at high temperature

RPCVD has great potential to improve device performance by growing a low temperature p-GaN layer which in turn improves the stability of the InGaN layer during growth.

Substrate

BLUGLASS LIMITED 2014 AGM PRESENTATION

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HB LED:
LOW TEMPERATURE p-GaN
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Using BluGlass’s MOCVD to grow partial LEDs and then overgrow with RPCVD p-GaN has shown steady improvements in the device light output and efficiency over the year. While not at the MOCVD benchmark performance yet, progress has been significant enough to attract a number of key industry players inquiring into low temperature p-GaN and other aspects of the RPCVD process.

LED STRUCTURE GROWN USING MOCVD

p-GaN GROWN USING RPCVD

p-GaN grown at INTERMEDIATE to HIGH temperature

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p-GaN grown at LOW temperature

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Multi-Quantum-Well (MQW) InGaN layer, the ACTIVE REGION of an LED – grown at low temperature

n-GaN grown at high temperature

Multi-Quantum-Well (MQW) InGaN layer, the ACTIVE REGION of an LED – grown at low temperature

n-GaN grown at high temperature

GaN grown at high temperature

Sapphire Substrate

BLUGLASS PRESENTATION – JUNE 2012

BLUGLASS LIMITED 2014 AGM PRESENTATION

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2013/14 Technical Progress (1)
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Implemented a critical hardware improvement – an enhanced plasma source capable of producing a high density of active nitrogen

Rationale (a) – A high density of active nitrogen assists in improving film quality
Rationale (b) – For scaling to larger volume chambers more active nitrogen is required

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Image of historic BluGlass nitrogen plasma

Outcomes/Progress:

The enhanced plasma source produced a higher density of active nitrogen species than all previous designs, confirming the validity of the design

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The bulk p-GaN growth rate was enhanced by approximately 50%
The p-GaN morphology was improved (smooth films were readily achieved)

BLUGLASS LIMITED 2014 AGM PRESENTATION

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2014 TECHNICAL PROGRESS (2)
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Integrated MOCVD and RPCVD growth

Rationale (a)– The last layer grown in MOCVD becomes the starting growth surface for RPCVD - to date RPCVD has grown best on smooth surfaces
Rationale (b)– The last layer(s) grown in MOCVD must protect the MQW from the subsequent cool down in MOCVD and the transfer to RPCVD

Outcomes/Progress:

Modest changes in MOCVD recipes have led to improved RPCVD p-GaN based LED performance
Oxygen impurities at the RPCVD p-GaN / MOCVD MQW interface have been addressed
Significant improvement of LED results were achieved through surface preparation approaches used in the RPCVD chamber but more work is needed to improve the starting conditions of RPCVD BLUGLASS PRESENTATION – JUNE 2012

to achieve improved LED efficiency

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Rough
MOCVD
MQW
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Smooth MOCVD template

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BLUGLASS LIMITED 2014 AGM PRESENTATION

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2014 TECHNICAL PROGRESS (3)
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Scaled the plasma technology to a larger deposition area RPCVD system

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Rationale (a)–– Need to convince potential customers that the RPCVD technology is readily transferable from the prototype system (BLG-180) to larger platforms (BLG-300)
Rationale (b)–– With two RPCVD systems we can address the key milestones more productively than with a single system

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Outcomes/Progress:

Successfully transferred the RPCVD technology from the BLG-180 to the BLG-300
Initial BLG-300 p-GaN LED results show device performance approaching the BLG-180 best efforts
GaN on Si work has commenced

BLUGLASS LIMITED 2014 AGM PRESENTATION

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HB LED:
p-GaN AND MQW GROWN USING RPCVD
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Several industry inquiries related to the ability to develop an RPCVD system capable of doing both the MQW and p-GaN to exploit the advantages of low temperature combined with the high growth rate capability of MOCVD for the thicker underlying n-GaN and GaN layers..

LED STRUCTURE GROWN USING MOCVD

p-GaN GROWN USING RPCVD

p-GaN grown at INTERMEDIATE to HIGH temperature

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p-GaN grown at LOW temperature

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Multi-Quantum-Well (MQW) InGaN layer, the ACTIVE REGION of an LED – grown at low temperature

n-GaN grown at high temperature

Multi-Quantum-Well (MQW) InGaN layer, the ACTIVE REGION of an LED – grown at low temperature

n-GaN grown at high temperature

GaN grown at high temperature

Sapphire Substrate

BLUGLASS LIMITED 2014 AGM PRESENTATION

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HB LED: LOW TEMPERATURE GaN ON SILICON
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In 2013, BluGlass was awarded a $3M Grant from the Australian Government to advance the RPCVD technology for LEDs on Si – combining the potential low temperature advantages of p- GaN to improve the device efficiency whilst reducing the bowing when growing on larger silicon wafers. The new BLG-300 was designed for this type of demonstration.

Optical microscope image of cracked GaN (unoptimised MOCVD growth on Si)

Proposed RPCVD Growth of Full LED on Si

In-situ measurement of bowing during unoptimised MOCVD growth of GaN on Si

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BLUGLASS LIMITED 2014 AGM PRESENTATION

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POWER ELECTRONICS:
LOW TEMPERATURE GaN ON SILICON
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GaN based power electronics applications use significantly different structures of nitrides compared to LEDs. These GaN applications typically require a high electron mobility transistor structure (HEMT) grown on Si, which have similar issues to GaN based LEDs grown on Si – challenges with wafer bowing and cracking when large substrates are used.

HEMT STRUCTURE GROWN USING MOCVD

HEMT STRUCTURE GROWN USING RPCVD

AlGaN grown at high temperature

AlGaN grown at low temperature

GaN grown at high temperature AlN/GaN or AlGaN/GaN Strain Relief layers grown at high temperature

GaN grown at low temperature AlN/GaN or AlGaN/GaN Strain Relief layers grown at low temperature

Silicon Substrate

Bowing and cracking concerns due to large mismatch in thermal expansion between Si and GaN. Complex strain relief structures are required to try to manage bow and cracking. BLUGLASS PRESENTATION – JUNE 2012

Reduced bowing and cracking concerns due to lower temperature growth of RPCVD. Simpler strain relief structures . can potentially be used

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NITRIDES FOR SPECIFIC APPLICATIONS:
Technical primer
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BLUGLASS LIMITED 2014 AGM PRESENTATION

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CONCENTRATED PHOTOVOLTAICS (CPV):
INDIUM RICH InGaN
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The potential advantage of RPCVD for CPV involves the tuning of InGaN composition with low temperature to enable indium rich InGaN compositions not readily accessible with MOCVD. A multi-junction InGaN solar cell has the potential for very high efficiency, in excess of the conventional CPV cells today that are based on Ge/InGAs/InGaP.

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Top cell: InGaN with high bandgap Middle cell: InGaN with medium bandgap Bottom cell: InGaN with low bandgap Glass or sapphire or Si substrate

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GREEN AND YELLOW LEDS (AND
LASER DIODES): LOW TEMPERATURE p-GaN
AND In RICH MQW
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Longer wavelength nitride based LEDs or Laser Diodes (green, yellow or red) require indium rich MQWs. This requires growing the MQW at lower temperatures (even lower than for blue) which in turn amplifies the MQW degradation issue when growing higher temperature p-GaN on top. RPCVD can potentially combine the low temperature advantage to obtain indium rich MQWs and the low temperature p-GaN to achieve very high efficiency long wavelength devices.

LED STRUCTURE GROWN USING MOCVD

p-GaN GROWN USING RPCVD

p-GaN grown at INTERMEDIATE to HIGH temperature

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p-GaN grown at LOW temperature

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Multi-Quantum-Well (MQW) In rich InGaN layer, the ACTIVE REGION of an LED – grown at low temperature

n-GaN grown at high temperature

Multi-Quantum-Well (MQW) In rich InGaN layer, the ACTIVE REGION of an LED – grown at low temperature

n-GaN grown at high temperature

GaN grown at high temperature

Sapphire Substrate

BLUGLASS PRESENTATION – JUNE 2012

BLUGLASS LIMITED 2014 AGM PRESENTATION

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UV LED: ALUMINUM RICH AlGaN
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MOCVD grown UV LEDs currently exhibit low efficiencies - significant improvement is required to address this market. One issue with MOCVD is the requirement for high quality Al rich AlGaN structures that are very difficult to achieve in conventional MOCVD systems where the maximum operating temperature is limited to below what is required to produce high quality Al rich AlGaN.

UV LED GROWN USING RPCVD

p-GaN/p-AlGaN

Multi-Quantum-Well of Al rich AlGaN layer, the ACTIVE REGION of an UVLED

n-AlGaN grown at low temperature

AlN/AlGaN Strain Relief layers

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AlN

Sapphire Substrate

BLUGLASS PRESENTATION – JUNE 2012

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RPCVD AlN TEMPLATES
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Another potential use of RPCVD is for growing high quality AlN templates at lower temperatures possible than in MOCVD. These types of templates can be used in many of the typical GaN applications including LEDs (including UV LEDs) and power electronics. This could provide an opportunity to sell wafers to the industry to manufacture devices with improved performance.

LED GROWN USING MOCVD ON RPCVD AlN TEMPLATE

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MOCVD
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RPCVD
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HEMT STRUCTURE GROWN
p-GaN/p-AlGaN
ON RPCVD AlN TEMPLATE
InGaN or AlGaInN MQW
AlGaN
n-GaN or n-AlGaN GaN
AlN AlN
Substrate Substrate
MOCVD
RPCVD
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BLUGLASS LIMITED 2014 AGM PRESENTATION

BLUGLASS LIMITED 2014 AGM PRESENTATION 41

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THANK YOU
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BLUGLASS LIMITED — AGM Information 2014

64532_rns_2014-11-23_bf89b18c-d751-402d-b6cd-b4ea62558773.pdf

IN REVIEW

KEY CASH EVENTS:

AHEAD

WHAT WE SET OUT TO DO

WHAT WE ACHIEVED

TECHNOLOGY

MARKETS

COMMERCIALISATION

IP STRATEGY

HB LED MARKET OPPORTUNITY

VALUE PROPOSITION

STATUS

POSSIBLE STRATEGIC PARTNER

UV LEDs MARKET OPPORTUNITY

VALUE PROPOSITION

UV LED MARKET size 2012-2017

UV LED MARKET OPPORTUNITY

GREEN & YELLOW LEDs MARKET OPPORTUNITY

VALUE PROPOSITION

InGaN CPV MARKET OPPORTUNITY

VALUE PROPOSITION

POSSIBLE STRATEGIC PARTNER

POWER ELECTRONICS MARKET OPPORTUNITY

VALUE PROPOSITION

STATUS

POSSIBLE STRATEGIC PARTNER

LASER DIODES MARKET OPPORTUNITY

CUSTOM EPITAXY / FOUNDRY MARKET OPPORTUNITY

PHASE 1

PHASE 3

THE TECHNOLOGY UPDATE

LED STRUCTURE GROWN USING MOCVD

BENEFITS OF RPCVD GROWTH

Outcomes/Progress:

Integrated MOCVD and RPCVD growth

Outcomes/Progress:

Outcomes/Progress:

Proposed RPCVD Growth of Full LED on Si

HEMT STRUCTURE GROWN USING MOCVD

HEMT STRUCTURE GROWN USING RPCVD

LED GROWN USING MOCVD ON RPCVD AlN TEMPLATE

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BLUGLASS LIMITED AGM Information 2014