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Atomera Inc

Investor Presentation Nov 18, 2025

14850_rns_2025-11-18_c8144f0e-4cc8-44f2-add4-5f900112b74f.pdf

Investor Presentation

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Safe Harbor

This presentation contains forward-looking statements concerning Atomera Incorporated (""Atomera," the "Company," "we," "us," and "our"). The words "believe," "may," "will," "potentially," "estimate," "continue," "anticipate," "intend," "could," "would," "project," "plan," "expect" and similar expressions that convey uncertainty of future events or outcomes are intended to identify forwardlooking statements. These forward-looking statements are subject to a number of risks, uncertainties and assumptions, including those disclosed in the section "Risk Factors" included in our Annual Report on Form 10-K filed with the SEC on March 4, 2025 (the "Annual Report"). In light of these risks, uncertainties and assumptions, the forward-looking events and circumstances discussed in this presentation may not occur and actual results could differ materially and adversely from those anticipated or implied in our forward-looking statements. You should not rely upon forward-looking statements as predictions of future events. Although we believe that the expectations reflected in our forward-looking statements are reasonable, we cannot guarantee that the future results, levels of activity, performance or events and circumstances described in the forward-looking statements will be achieved or occur.

This presentation contains only basic information concerning Atomera. The Company's filings with the Securities Exchange Commission, including the Annual Report, include more information about factors that could affect the Company's operating and financial results. We assume no obligation to update information contained in this presentation. Although this presentation may remain available on the Company's website or elsewhere, its continued availability does not indicate that we are reaffirming or confirming any of the information contained herein.

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Mears Silicon Technology (MST®)

Quantum Engineered Materials

Transistor enhancement High Leverage IP technology for the Licensing Business \$600B semiconductor Model market Top Tier Strong, Growing and Management Team Defensible

Patent Portfolio

{3}------------------------------------------------

MST Technology

Potential Benefits

Improved Efficiency

  • Higher transistor performance
  • Lower power consumption
  • Better reliability

Lower cost

  • Reduced die size
  • Improved yield
  • Higher throughput

Same benefits as a node shrink

{4}------------------------------------------------

Strong and Growing IP Portfolio

402 Patents Issued and Pending

Core MST Method and Device MST Enabled Devices/Architecture Next-Gen Architectures using MST

Discoverable

These distinctive layers are visible on products using MST

Extensive know-how Extends life and value of patents

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Target Customers & Partners

Integrated Device Manufacturers Foundry

Fabless

Tool Suppliers (Partners)

{6}------------------------------------------------

Customer Status

v Customer Wafer Manufacturing
Atomera MST®
Customer MST®
Deposition
Deposition
Phase 1. Planning 2. Setup 3. Integration 4. Installation 5. Qualification 6. Production

Engagement Phases

  • 20 customers, 26 engagements
  • Working with more than half of the world's top semiconductor makers*

• At least 10 of the top 20 semiconductor sales leaders with fabs (IC Insights, McClean Report 2023)

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Customer Engagement & Revenue Model

License Fees

  • R&D license
  • HVM license

Joint Development Agreements

Royalties

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Productization cycle

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Revenue potential and timing

MST starting wafers Easier integration, faster time to revenue

• RFSOI, GaN, Next Gen DRAM, etc

High volume potential products

Longer integration, higher revenue potential

• GAA Logic, DRAM, Power, Flash memory, etc.

Breakthrough, enabling materials

New disruptive technologies

• Si28 for Quantum, Piezo, HBM Memory, etc.

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MST Key Benefits Across Nodes

These Benefits are ADDITIVE & COMPLEMENTARY to other enhancement technologies

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MST technology focus areas

MST-SP, SPX for BCD

MST for RF-SOI

MST for Advanced Nodes

MST for DRAM

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MST optimizes AI performance

  • AI algorithms are driving unparalled computing demands
  • Exceeding ideal single chip silicon area which impacts yield
  • Heterogenous chiplet architectures solve this problem
  • Small chiplet designs can be optimized by process node
  • MST's ability to enhance mature nodes brings great value

Atomera 13

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Strategic Marketing Agreement

  • Joint marketing agreement with major semiconductor equipment maker
  • Focused on Gate-All-Around transistors
  • Enables solutions that are more validated so faster to production

  • Leverages partner's sales and marketing resources

  • Partnership may extend into other application areas

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GAA Opportunity

MST provides benefits in multiple areas for Gate-All-Around transistors

Source: IMEC

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MST-SPX

Atomera introduced MST-SP in 2022

  • Market leading 5V Rsp vs BVdss performance
  • Allows higher efficiency, smaller size

MST-SPX targets 5-48V

▪ Area of highest customer interest

MST achieves best in class performance

  • MST-SPX beat all published results
  • Simulations predict up to 20% improvement
  • Customers have simulated higher levels

Provides clear economic benefit to customers

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Variability reduction with MST

  • High variability between transistors is a significant issue
  • A big driver of variability is Random Dopant Fluctuation (RDF)
  • Some transistors are designed larger to account for variability
  • This increases costs and limits the minimum achievable voltage and power
  • Advanced GAA transistor need solutions for RDF
  • DRAM sense-amp variability is a major design constraint
  • Sense-amp margin defines refresh interval and resulting power
  • Improving variability allows smaller sense-amp and reduced power
  • MST can minimize RDF and lower variability, critical in advanced nodes and memories

{17}------------------------------------------------

RFSOI LNA

Macro factors affecting handset design

  • New mobile phones want to move from 4 to 6 carrier aggregation channels
  • New freq bands opening for 5G and 6G cellular
  • LNAs (Low Noise Amplifiers)
  • Receiver circuit used in mobile phones
  • Must turn on frequently to monitor for signals
  • Can be a major source of power consumption
  • Even more bands/channels coming soon
  • Leading handset makers seeking much lower power LNAs which MST can help deliver

Atomera 18

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MST for GaN/Si

  • Atomera provides modified Si substrates incorporating MST layers
  • ► GaN growth at various US locations
  • Physical characterization indicates fewer defects in GaN device layer
  • Electrical characterization in process at Sandia National Lab
  • Preliminary electrical data is consistent with lower defects (lower leakage, higher breakdown voltage)
  • Sandia National Lab Rapid Access Program renewed in April 2025

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GaN/Si crystal quality improvement

X-ray confirms crystal quality improvement with MST

Collaboration with Sandia's CINT to validate benefits

In plot, each bar represents the average of FWHM values measured at positions 15mm and 30mm from the center of a 100mm wafer

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Compound Semiconductors

  • Compound semiconductor market growing rapidly
  • GaN is one example
  • Poor wafer substrate quality causes manufacturing challenges
  • Atomera's MST may help to solve this problem
  • Early experiments of GaN on MST show promising results

Atomera 21

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Royalty Opportunity

  • ~410 wafer fabs operating worldwide
  • Adoption of MST in one fab can make Atomera profitable from royalties alone
  • 2025 non-GAAP OPEX guidance is ~\$17M
Example 1 Worldwide Average Fab
Monthly Fab Capacity1
(wafers/month)
46,240
Industry average wafer ASP -
2018
\$1,365
Annual Revenue Potential2 \$15.1M
Annual Revenue at 50% of ramp2 \$7.6M
Example 2 Leading Foundry, 28nm Fab
Monthly Fab Capacity
(wafers/month)
80,000
Industry average 28nm wafer ASP \$3,300
Annual Revenue Potential2 \$63M
Annual Revenue at 50% of ramp2 \$31.7M

1. Represents wafers starts per month (200mm equiv) – 227.5M starts in 410 fabs

Source: IC Insights Global Wafer Capacity 2021-2025 report, McClean Report 2021, 2022

2. Assumes 2% royalty rate

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MST Customer Business Opportunity

Foundry economics

Wafer GM\$ MST Wafer
Price
Increase
GM%
3,300
45%
\$
-
Royalty Cost
28nm HP wafer \$ \$
-
\$ 1,815
28nm HP+ wafer \$
3,450
45% \$
68
\$
-
5% higher price for +15% performance boost
28nm HP wafer with MST \$
3,600
47.0% \$
208
\$
72
\$ 1,907 30% performance boost=10% higher price (+ \$20 MST cost)
28nm HP wafer with MST \$
3,713
48.6% \$
318
\$
74
\$ 1,909 25% die shrink=12.5% price increase (+ \$20 MST cost)
  • Gross margin increases by \$200-\$300 per wafer after foundry pays Atomera royalties
  • Fabless semiconductor economics
Chip sales/
wafer
GM% GM\$
Increase
Product
ASP
Die/wafer
28nm HP wafer \$
9,233
50% \$
-
\$
4.86
2,235 Baseline business for 30mm2
chip
28nm HP wafer with MST \$ 12,398 59% \$ 3,165 \$
4.86
3,001 Improved financials with 25% size reduction
  • Sales and profit both increase by over \$3000 per wafer for fabless manufacturer
  • Everyone in the value chain benefits from MST technology

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Financial Review

Income Statement Three e Months Ended
(\$ in thousands, except per-share data) Septen nber 30, 2025 une 30, 2025 September 30, 2024
REVENUE \$ 11 \$ - \$ 22
Gross Profit (117) (62) 19
OPERATING EXPENSES
Research & Development 3,304 3,004 2,759
General and Administration 2,165 2,048 1,812
Selling and Marketing 207 141 248
TOTAL OPERATING EXPENSES 5,676 5,193 4,819
OPERATING LOSS (5,793) (5,255) (4,800)
Other Income (Expense) 220 288 205
NET LOSS \$ (5,573) \$ (4,967) \$ (4,595)
Net Loss Per Share \$ (0.19) \$ (0.17) \$ (0.17)
Weighted average shares outstanding 31,128 30,397 27,406
ADJUSTED EBITDA (NON-GAAP) \$ (4,440) \$ (3,965) \$ (3,881)
ADJUSTED EBITDA PER SHARE \$ (0.14) \$ (0.13) \$ (0.14)
Balance Sheet Information
Cash, equivalents & ST investments \$ 20,322 \$ 22,026 \$ 17,342
Debt - - -

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Summary

  • ► High margin, recurring revenue financial model
  • ► Strong technology, patent position, and balance sheet
  • ► Traction with many top industry players and growing licensee base
  • ► Ramping commercial license revenues

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Customer Engagement Model

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MST-SP

  • MST-SP is a highly-engineered asymmetric power device
  • Uses MST to enhance Idlin and precisely control dopant profiles
  • Improves 5V power devices
  • Lower RSP
  • Can be traded for up to 20% smaller area
  • Targeted for rapidly-growing PMIC market

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5V Transistors – Critical and Growing Market

  • Targeted at rapidly-growing PMIC (Power Management IC) market
  • Power devices can be up to 80% of PMIC die area
  • All ICs need stable, regulated power
  • Across battery charge level, lifetime degradation, and load
  • Across usage modes DVS (Dynamic Voltage Scaling), sleep, others
  • 5V transistor required to deliver IC power from any source
  • Battery-powered, USB, wall connected
  • 5V devices do not scale with Moore's Law
  • MST SP allows significant scaling of gate length, and a performance boost
2018-2025F IC Market Forecast by Device Type (Analog)
Product Category 18 19 19/18
% Chng
20 20/19
% Chng
21F 21/20
% Chng
22F 22/21
% Chng
23F 23/22
% Chng
24F 24/23
% Chng
25F 25/24
% Chng
20-2
CAG
Power Management (\$M)
Units (M)
ASP (\$)
14,529
69,243
\$0.21
14,050
67,227
\$0.21
-3%
-3%
0%
14,640
68,409
\$0.21
4%
2%
2%
18,153
80,788
\$0.22
24%
18%
5%
20,332
91,396
\$0.22
12%
13%
-1%
22,568
102,475
\$0.22
11%
12%
-1%
23,019
105,580
\$0.22
2%
3%
-1%
24,861
115,178
\$0.22
8%
9%
-1%
11'
11'
09

Source: IC Insight's McClean Report, June 2021

"A typical 5G smartphone can hold as many as eight powermanagement chips, compared with two to three in a 4G phone, according to Hui He, an analyst at research firm Omdia."

WSJ "Why the Chip Shortage is So Hard to Overcome" 4/20/2021

{30}------------------------------------------------

MST-SPX targeting power devices

  • ► Targets higher voltage (5-40V) product area
  • ► Strong customer demand for solutions
  • MST brings significant improvement
  • Early results showing gains in many areas
  • Allows manufacturers to shrink designs, cut product costs
  • ► Early stages of customer rollout

$L_{DEVICE} = 1.84um$

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Example: Use Of 5V Transistor In Apple iPhone13

13 of 25 IC's in Apple iPhone13 Pro use 5V transistors

▪ iPhone 13 Pro teardown by Tech Insigths

▪ 5V transistor assessment by Atomera

Reference https://www.techinsights.com/blog/teardown/apple-iphone-13-pro-teardown?utm_source=Prospect+Email&utm_medium=Email&utm_campaign=2021+-+Q3+-+Teardown+-+Blog-+Apple+iPhone+13

{32}------------------------------------------------

5V MST-SP Product – Value Proposition

  • Industry best performance at 180nm (Rsp)
  • Based on measured silicon data
  • Scalable to smaller process nodes
  • Meets all reliability requirements
  • Breakdown Voltage (BVDSS) > 10.5V
  • Significant cost savings, performance benefits
  • Die area reduction up to 20%
  • Demonstrates the big advantage MST can bring to highly optimized designs
  • Complete design package accelerates time to production

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Atomera MSTcad

  • Leading semiconductor companies use TCAD to model manufacturing processes
  • MSTcad is an add-on for MST
  • MSTcad can speeds up the time needed to evaluate multiple MST integration options
  • Lowers cost of MST evaluation
  • Speeds time to successful wafer runs
  • Fewer wafer runs lead to faster production

Atomera 34

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MST enables legacy capacity expansion

  • MST provides 30% performance advantage
  • 0.13u analog design
  • MST vs control silicon
  • Enables a die shrink of 15-20%
  • Smaller die means more manufacturing capacity
  • Without the cost of building a new fab

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MST 28nm benefits

MST shows 30% higher performance

MST performance improvement due to:

  • Higher electron mobility
  • Improved gate oxide integrity enabling higher overdrive

  • Performance improvements due to MST can be traded for area reduction

  • 28nm PDK SPICE model used to showcase:
  • Logic scaling with MST shows 22-25% area reduction
    • Using a NAND2 gate
  • Analog scaling with MST shows up to 21% area reduction
  • Implementation of MST on new 28nm designs can result in >20% more production capacity
  • Allows excellent economic benefits for the whole value chain

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MST for High-k metal gate (HKMG) transistors

MST enhances HKMG transistor performance and reliability*

  • Reduced stress induced leakage current (SILC) enabling reliability improvement
  • 23% long-channel mobility enhancement
  • 2.7x lower gate leakage

* Professor Suman Datta Group

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MST: Mears Silicon Technology

Quantum Engineered Silicon

Partial Monolayers of Oxygen in Silicon

Supported by Major Semiconductor Tool Suppliers

MST Enhanced Transistors

{38}------------------------------------------------

Atomera state of the art research center

Epi Deposition Tool

Epi deposition facility

  • 300mm Epi deposition
  • 200mm Epi deposition
  • Wafer cleaning equipment
  • Metrology tools
  • Advanced wafer handling
  • World class clean room facility
  • Available to deliver customer wafers

{39}------------------------------------------------

Atomera MSTcad Progress

  • ► Leading semiconductor companies use TCAD
  • ► MST is modelled with a TCAD add-on called MSTcad
  • ► These plots show silicon verification of MSTcad simulations
  • ► Enables good electrical match-up for 5V NMOS and MST SP
  • ► Should speed time to successful results with customers

{40}------------------------------------------------

MST1 vs MST2

MST1

  • Blanket technology
  • Easy to integrate
  • Deposited at beginning of mfg process
  • Degraded by high heat in STI/Well module
  • Faster time to market for low heat processes
  • Used for FinFET, RFSOI, newer process nodes

MST2

  • Selective technology
  • Integrated after STI/Well so avoids highest heat
  • More flexible to apply to selected areas only
  • Used for 5V, Analog, older process nodes

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