4DS MEMORY LIMITED — Investor Presentation 2017

Nov 23, 2017

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A DISRUPTIVE TECHNOLOGY FOR STORAGE CLASS MEMORY

Investor Presentation – November 2017

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DISCLAIMER IMPORTANT NOTICE:

This presentation has been prepared by 4DS Memory Limited. (“4DS” or the “Company”) based on information available to it as at the date of this presentation. The information in this presentation is provided in summary form and does not contain all information necessary to make an investment decision.

This presentation does not constitute an offer, invitation, solicitation or recommendation with respect to the purchase or sale of any security in 4DS, nor does it constitute financial product advice or take into account any individual’s investment objectives, taxation situation, financial situation or needs. An investor must not act on the basis of any matter contained in this presentation but must make its own assessment of 4DS and conduct its own investigations. Before making an investment decision, investors should consider the appropriateness of the information having regard to their own objectives, financial situation and needs, and seek legal, taxation and financial advice appropriate to their jurisdiction and circumstances. 4DS is not licensed to provide financial product advice in respect of its securities or any other financial products. Cooling off rights do not apply to the acquisition of 4DS securities.

Although reasonable care has been taken to ensure that the facts stated in this presentation are accurate and that the opinions expressed are fair and reasonable, no representation or warranty, express or implied, is made as to the fairness, accuracy, completeness or correctness of the information, opinions and conclusions contained in this presentation. To the maximum extent permitted by law, none of 4DS, its officers, directors, employees and agents, nor any other person, accepts any responsibility and liability for the content of this presentation including, without limitation, any liability arising from fault or negligence, for any loss arising from the use of or reliance on any of the information contained in this presentation or otherwise arising in connection with it.

Forward looking statements

This presentation contains certain forward looking statements that are based on the Company’s management’s beliefs, assumptions and expectations and on information currently available to management. Such forward looking statements involve known and unknown risks, uncertainties, and other factors which may cause the actual results or performance of 4DS to be materially different from the results or performance expressed or implied by such forward looking statements. Such forward looking statements are based on numerous assumptions regarding the Company’s present and future business strategies and the political and economic environment in which 4DS will operate in the future, which are subject to change without notice. Past performance is not necessarily a guide to future performance and no representation or warranty is made as to the likelihood of achievement or reasonableness of any forward looking statements or other forecast.

To the full extent permitted by law, 4DS and its directors, officers, employees, advisers, agents and intermediaries disclaim any obligation or undertaking to release any updates or revisions to information to reflect any change in any of the information contained in this presentation (including, but not limited to, any assumptions or expectations set out in the presentation).

The information presented in this presentation is subject to change without notice and 4DS does not have any responsibility or obligation to inform you of any matter arising or coming to their notice, after the date of this presentation, which may affect any matter referred to in this presentation.

The distribution of this presentation may be restricted by law and you should observe any such restrictions.

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GLOBAL DATA EXPLOSION PRESENTS HUGE CHALLENGES.

The semiconductor industry recognises the challenge and is investing billions of dollars annually on research and development to create a solution.

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THE CHALLENGE.

Currently DRAM and NAND Flash are the main technologies utilized today. Both are US$40 billion markets.

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NAND Flash is slow, has limited endurance but is cheap and non-volatile

DRAM is super-fast, has exceptional endurance but is expensive and volatile

A new innovation is required and the industry refers to it as Storage Class Memory - over time this is predicted to have a market size as large as DRAM and NAND Flash

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STORAGE CLASS MEMORY.

Emerging as the leading new category to extend the memory hierarchy.

STORAGE CLASS MEMORY

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Combines the best characteristics
of DRAM and NAND Flash
Storage
Memory
NAND Non-Volatile
Flash
Volatile
Storage
Class DRAM
Memory
Die Cost ($/GB)
Access Time (Sec)
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Battleground for next generation memory technology.

– Faster DRAM-like read speed

Cheaper – NAND Flash-like costs

– Non-volatile Retains data when power is off

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MARKETS FOR STORAGE CLASS MEMORY.

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INTERFACE
SWITCHING
ReRAM
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CLOUD DATACENTERS MOBILE DEVICES

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THE STORAGE CLASS MEMORY SOLUTION.

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World-leading Silicon Valley based ReRAM developer

4DS is the most advanced Interface Switching ReRAM

19 US patents developed and granted and 4 pending

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The most promising ReRAM cell for Storage Class Memory

Joint development agreement with Western Digital subsidiary HGST since 2014

Strategic collaboration with imec signed in November 2017

Successful A$3.45 mil placement in November 2017

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STORAGE CLASS MEMORY REQUIREMENTS.

Requirements

• Based on well-understood physics to be sustainable over generations

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• Area based to achieve cost and density as close as possible to NAND Flash

• Capable of speed comparable to DRAM

• Endurance suitable for Storage Class Memory

• As much retention as possible to meet Storage Class Memory requirements

• As much retention as possible without sacrificing speed and endurance

• Tunable technology in the vast opportunity between DRAM and NAND Flash

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STORAGE CLASS	STORAGE CLASS	STORAGE CLASS
M	EMORY
R	EQUIREMENT	S.
4DS	Requirements
✓	• Based on well-understood physics to be sustainable over generations
✓	• Area based to achieve cost and density	as close as possible to NAND Flash
✓	• Capable of speed comparable to DRAM
✓	• Endurance suitable for Storage Class Memory
✓	• As much retention as possible to meet Storage Class Memory requirements
✓	• As much retention as possible without sacrificing speed and endurance
✓	• Tunable technology in the vast opportunity between DRAM and NAND Flash

STORAGE CLASS MEMORY REQUIREMENTS.

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CURRENT STATUS.

4DS Interface Switching ReRAM has displayed enough relevant and meaningful data in each category to now move immediately to production of a Megabit chip, a giant step forward .

Scales to geometries needed for high-density memory and 3D : 40nm memory cell

Endurance far exceeds NAND Flash

Endurance yield >97%

Read speed comparable to DRAM – an area-based ReRAM first

No need for speed crippling error correction – a ReRAM first

Current retention data adequate for Storage Class Memory

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THE LEAP TO STORAGE CLASS MEMORY.

imec Collaboration

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4DS ReRAM Reaches Read imec Collaboration
Speed Comparable to DRAM - Focused on Megabit chip development
- Current retention data is sufficient
Achieves
- A$3.83 mil placement / options exercised
Endurance Milestone
Achieves Working CORPORATE / TECH
40nm ReRAM Cells • Strategic Partnership/s
• Development of Megabit
Renews chip
HGST Agreement
October 2016 December 2016 June 2017 2 [nd] Half 2017 Going forward
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CORPORATE / TECH

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COLLABORATION AGREEMENT.

imec , is the world’s #1 independent semiconductor development institute

Collaborates with the who’s who of electronic products and systems

Collaborates with makers of high-volume high-density memories

Has a world leading track record in the transfer of semiconductor processes Uses the same tools as industry for high-volume production of high-density memories

Has a proven megabit memory platform to fast track development of Megabit chip Used this platform to explore a wide range of emerging memories

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JOINT DEVELOPMENT AGREEMENT.

HGST , is a subsidary of Western Digital Corporation (US$27 billion market cap), the largest global leader in digital storage.

Strategic innovator in emerging high growth technologies

Commenced in 2014 – Renewed in 2015, 2016 and 2017

Insight into what is important in a data-centric world

Siva Sivaram, Head of Memory at Western Digital, commented “We are committed to ReRAM, it is scalable with greater density, lower cost and latency and longer endurance”*

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*12/8/2016 EE Times – 14 Views from the Flash Summit

BOARD AND MANAGEMENT.

Global expertise founding and building high-tech companies.

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JIM DORRIAN

Non-Executive Chairman

Served as CEO of several Silicon Valley companies Extensive M&A experience

Partner at VC firm Crosspoint Venture Partners

Last transaction was the sale of Bill Me Later – a company Jim founded and sold to PayPal for US$1 billion

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Dr SESHUBABU DESU

Chief Technology Officer

Expert in thin films, semiconductor processing and non-volatile memories

Professor, Dean and Head of Electrical Engineering at various universities

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Dr GUIDO ARNOUT

CEO & Managing Director

30+ years in commercialising electronics technology

Successes include, PowerEscape, CoWare, CrossCheck Technology and Silvar-Liso

DAVID McAULIFFE

Executive Director

Experienced company director

Involved in numerous capital raisings and in-licensing of technologies

Founder of several companies in Australia, France and the UK, many of which are now ASX listed

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HOWARD DIGBY

Non-Executive Director

Former senior roles at IBM, Adobe, Gartner and the Economist Group

Non-Executive Director Elsight Ltd and Chairman of Omni Market Ltd

Advisor to a number of early stage technology companies

MICHAEL VAN BUSKIRK

Chief Engineering Officer

Executive roles with a number of leading memory companies in Silicon Valley

These include, Adesto Technologies Corporation, Innovative Silicon Inc and Spansion Inc.

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CAPITAL STRUCTURE.

ASX Code	4DS
Market Cap (Fully Diluted)	$48 Million*
Ordinary Shares on Issue	942 Million
Unlisted Options	124 Million
Cash	$5 Million – Nov 2017
Board and Management	8%
Top 20	33%

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*[As at 23 November 2017]

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SUMMARY.

4DS is developing a breakthrough Interface Switching ReRAM Storage Class Memory solution

Significant progress to date is pivotal for Storage Class Memory

Four year strategic partnership with HGST, leader in digital storage

Imec - strategic collaboration to develop megabit chip with the world-leading researcher in nano electronics

Consistently achieves stated milestones

Strong patent portfolio wholly owned and developed in-house

World-class team of memory specialists, material scientists and test engineers

Board experienced in founding, building and exiting high tech companies

4DS is addressing the massive memory demands of tomorrow

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THANK YOU

SILICON VALLEY

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ABN 43 145 590 110

ASX Code: 4DS

3155 Skyway Court Fremont CA 94539 UNITED STATES

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AUSTRALIA
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Level 2, 50 Kings Park Road West Perth WA 6005 AUSTRALIA

www.4dsmemory.com david@4dsmemory.com

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