VPEC — Interim / Quarterly Report 2020

May 20, 2020

==> picture [635 x 32] intentionally omitted <==

==> picture [635 x 32] intentionally omitted <==

==> picture [635 x 32] intentionally omitted <==

==> picture [635 x 31] intentionally omitted <==

公司簡介

MOCVD 創造世界級之競爭力

==> picture [143 x 146] intentionally omitted <==

核心技術

MOCVD( 有機金屬氣相沉積法 )

• Metal Organic Chemical Vapor Deposition

==> picture [461 x 69] intentionally omitted <==

==> picture [461 x 193] intentionally omitted <==

2

半導體分類(依使用材料)

Element Si Ge , IV-IV SiC, SiGe

==> picture [700 x 372] intentionally omitted <==

----- Start of picture text -----

,
Semiconductor	IV-IV
SiC,	SiGe
III-V
GaAs,	InP, GaN, GaP, GaSb...
Com	ound
p
II-VI
ZnSe,	ZnS, CdS, etc.
Period	Column II	III	IV	V	VI
Be	鈹	B	硼	C	碳	N	氮	O	氧
2
Beryllium	Boron	Carbon	Nitrogen	Oxygen	二元化合物	Binary : GaAs, InP, GaP,GaN, etc.
Mg	鎂	Al	鋁	Si	矽	P	磷	S	硫
3	Magnesium	Aluminum	Silicon	Phosphorus	Sulfur	三元化合物	Ternary : InGaAs, InGaP, AlGaAs, etc.
4	Zn	鋅	Ga	鎵	Ge	鍺	As	砷	Se	硒	四元化合物	Quaternary : AlGaInP, InGaAsP, etc.
Zinc	Gallium	Germanium	Arsenic	Selenium
Cd	鎘	In	銦	Sn	錫	Sb	銻	Te	碲	五元化合物	Pentanary : AlGaInAsN, etc.
5
Cadmium	Indium	Tin	Antimony	Tellurium
Hg	汞	Tl	鉈	Pb	鉛
6
Mercury	Thallium	Lead
3

----- End of picture text -----

Semiconductor

3

磊晶過程中之化學反應

化學反應式：

主要原物料 :

==> picture [275 x 97] intentionally omitted <==

MO Source + Hydride + Carrier Gas ： H2

A s H 3[: rs ne] A i PH3 : Phosphine SiH 4 : Silane Si H 2 6 : Disiline H2Se : Hydrogen Selenide CBr 4 : Carbon Tetrabromide

TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga SiH TMIn : Tri-Methyl-Indium ( CH3 )3In Si H 2 DETe : Di-ethyl-Tellurium ( C2H5 )2Te DEZn : Di-ethyl-Zinc ( C2H5 )2Zn CBr CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂

Al

CH Al 3 TMAl Tri - Methyl - Aluminum ( CH3 )3 三 甲基 鋁

CH 3

CH 3

4

化合物半導體材料特性

1. High Electron Mobility高電子移動速率 2. High Frequency Response高頻率響應 3. Wide Band Width 寬幅之頻寬 4. High Linearity高線性度 5. High Power高功率 6. Alternative Choice of Material材料選擇多元性 7. 抗輻射 適用於無線通訊、光纖通訊、光顯示(LED)& 太 陽能產業

5

產業供應鏈

、 Freiberg AXT

4~6 ”GaAs Substrate

Microelectronics IC Process

==> picture [80 x 32] intentionally omitted <==

GaAs Epi- Wafer 磊晶片

==> picture [130 x 48] intentionally omitted <==

==> picture [125 x 45] intentionally omitted <==

==> picture [125 x 52] intentionally omitted <==

==> picture [130 x 59] intentionally omitted <==

==> picture [151 x 113] intentionally omitted <==

==> picture [209 x 44] intentionally omitted <==

==> picture [111 x 57] intentionally omitted <==

----- Start of picture text ----- Substrate----- End of picture text -----

MOCVD Reactor

==> picture [145 x 153] intentionally omitted <==

Wireless Communication

==> picture [97 x 84] intentionally omitted <==

IC Package & Testing

6

2016-2020Q1 Financial Result

	2020 Q1	%	2019	%	2018	%	2017	%	2016	%
Revenue	649,635	100.00%	2,530,909	100.00%	2,062,120	100.00%	2,137,109	100.00%	2,182,825	100.00%
Grossmargin	266,264	40.99%	1,034,272	40.87%	774,359	37.55%	743,467	34.79%	809,059	37.06%
OperatingPfitro	166,428	25.62%	648,983	25.64%	463,906	22.50%	515,093	24.10%	588,072	26.94%
FinancialIncome	10,226	1.57%	-20,380	-0.81%	25,273	1.23%	-35,375	-1.66%	-29,431	-1.35%
Tax	-35,642	-5.49%	-114,278	-4.52%	-92,009	-4.46%	-85,366	-3.99%	-91,534	-4.19%
Net income	141,012	21.71%	514,325	20.32%	397,170	19.26%	394,352	18.45%	467,107	21.40%
EPS	0.76		2.79		2.16		2.15		2.12

7